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    L2SC3356LT1G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    L2SC3356LT1G Leshan Radio Company High-Frequency Amplifier Transistor Original PDF

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    L2SC3356LT1G

    Abstract: No abstract text available
    Text: DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1G S-L2SC3356LT1G DESCRIPTION The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. S- Prefix for Automotive and Other Applications Requiring Unique Site


    Original     		PDF L2SC3356LT1G S-L2SC3356LT1G L2SC3356LT1 AEC-Q101 L2SC3356LT3G S-L2SC3356LT3G OT-23 3000/Tape L2SC3356LT1G

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356LT1G The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. 3 It has dynamic range and good current characteristic. ORDERING INFORMATION Device


    Original     		PDF L2SC3356LT1G L2SC3356LT1 L2SC3356LT3G OT-23 3000/Tape 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356LT1G The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. 3 It has dynamic range and good current characteristic. ORDERING INFORMATION Device


    Original     		PDF L2SC3356LT1G L2SC3356LT1 L2SC3356LT3G OT-23 3000/Tape 10000/Tape

    NF 723

    Abstract: L2SC3356LT1 L2SC3356LT1G L2SC3356LT3G
    Text: DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356LT1G The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. 3 It has dynamic range and good current characteristic. ORDERING INFORMATION Device


    Original     		PDF L2SC3356LT1G L2SC3356LT1 L2SC3356LT3G OT-23 3000/Tape 10000/Tape 195mm 150mm NF 723 L2SC3356LT1G L2SC3356LT3G

    L2SC3356LT1

    Abstract: L2SC3356LT1G L2SC3356LT3G transistor 20 dB
    Text: DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356LT1G The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. 3 It has dynamic range and good current characteristic. ORDERING INFORMATION Device


    Original     		PDF L2SC3356LT1G L2SC3356LT1 L2SC3356LT3G OT-23 3000/Tape 10000/Tape L2SC3356LT1G L2SC3356LT3G transistor 20 dB

    2x062h

    Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
    Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1


    Original     		PDF ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062