KSB546
Abstract: KSD401 vertical tv deflexion KSD401 O
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor KSD401 DESCRIPTION •Collector-Base Breakdown Voltage: V BR CBO= 200V(Min) ·Collector Current- IC= 2A ·Collector Power Dissipation: PC= 25W@ TC= 25℃ ·Complement to Type KSB546
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KSD401
KSB546
KSB546
KSD401
vertical tv deflexion
KSD401 O
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Untitled
Abstract: No abstract text available
Text: KSD401 NPN EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT TO-220 • Complement to KSB546 • Collector-Base Voltage: VCBO=200V • Collector Current: IC=2A • Collector Dissipation: PC=25W TC=25°C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol
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KSD401
KSB546
O-220
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Untitled
Abstract: No abstract text available
Text: KSD401 KSD401 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO=200V Collector Current : IC=2A Collector Dissipation : PC=25W TC=25°C Complement to KSB546 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSD401
KSB546
O-220
KSD401
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KSB546
Abstract: KSD401
Text: KSD401 KSD401 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO=200V Collector Current : IC=2A Collector Dissipation : PC=25W TC=25°C Complement to KSB546 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSD401
KSB546
O-220
KSB546
KSD401
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Untitled
Abstract: No abstract text available
Text: KSB546 KSB546 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO = -200V Collector Current : lC = -2A Collector Dissipation : PC= 25W TC=25°C Complement to KSD401 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor
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KSB546
-200V
KSD401
O-220
KSB546YTU
KSB546O
KSB546R
KSB546Y
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Untitled
Abstract: No abstract text available
Text: KSB546 KSB546 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO = -200V Collector Current : lC = -2A Collector Dissipation : PC= 25W TC=25°C Complement to KSD401 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor
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KSB546
-200V
KSD401
O-220
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KSB546
Abstract: KSD401
Text: KSD401 KSD401 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO=200V Collector Current : IC=2A Collector Dissipation : PC=25W TC=25°C Complement to KSB546 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSD401
KSB546
O-220
KSB546
KSD401
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Untitled
Abstract: No abstract text available
Text: KSB546 KSB546 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO = -200V Collector Current : lC = -2A Collector Dissipation : PC= 25W TC=25°C Complement to KSD401 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor
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KSB546
-200V
KSD401
O-220
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KSB546
Abstract: KSD401
Text: KSB546 KSB546 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO = -200V Collector Current : lC = -2A Collector Dissipation : PC= 25W TC=25°C Complement to KSD401 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor
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KSB546
-200V
KSD401
O-220
KSB546
KSD401
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fjaf6812
Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
Text: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320
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O-126
KSC2682
KSC3502
KSC2258
KSC2258A
KSC3503
KSC3953
KSC2688
BD150
KSC5305D
fjaf6812
tip41 darlington
fjaf6920
BUT12(A)F
KSA1010
transistor bd140-15
bu408 equivalent
FJL6920 equivalent
fjl6820
FJL6920
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BJT BD139
Abstract: TIP416 ksh200 equivalent BD243 ksh50 power BJT BD242 tip426 BD53 kse13003
Text: Discrete Power BJT General Purpose Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320 0.01 - 0.6 KSC2258 0.1
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O-126
KSC2682
KSC3502
KSC2258
KSC2258A
KSC3503
KSC3953
KSC2688
BD157
2JD210
BJT BD139
TIP416
ksh200 equivalent
BD243
ksh50
power BJT
BD242
tip426
BD53
kse13003
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B0530
Abstract: MPSU57 motorola 2SA958 2N2882 ppc power transistor
Text: POWER SILICON PNP Item Part Number Number I C 5 10 >= 20 SOT69504 SOT69604 SOT69604 SOT3504 SOT3504 SOT3504 SOT3512 SOT3512 ~~~ggJ2 25 30 2N6180 2SA1008 2SA1395M B03700 B03700 B03720 B03720 SOT69512 ~~+~~~~~ 35 40 SOT69612 MM5007 NSOU57 SOT3508 SOT3508 SOT3508
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RCA1A04
SML69604
SML69612
SML3504
SML3508
SML3512
SML3516
2N2882
2N3207
BLX41
B0530
MPSU57 motorola
2SA958
ppc power transistor
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2N5657 equivalent
Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.
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2N5655
2N5656
2N5657
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
2N5657 equivalent
2SA1046
BU326
BU108
BU100
2SC2331 Y
tip47 419
2N3792 application notes
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MJE494
Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS
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BD157
BD158
BD159
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
MJE494
2SC1419
BD 804
2SD675
MJE104
BD581
BD135 CURVES
MJ1000
DTS-4041
2N5037
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KSD401 TV VERTICAL DEFLECTION OUTPUT • • • • C om plem ent to KSB546 C ollector-B ase Voltage: V Cb o = 2 0 0 V C ollecto r C urrent: lc=2A C ollecto r D issipation: P c= 2 5 W T c=25°C ABSOLUTE MAXIMUM RATINGS Rating
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KSD401
KSB546
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KSB546
Abstract: KSD401
Text: NPN EPITAXIAL SILICON TRANSISTOR KSD401 TV VERTICAL DEFLECTION OUTPUT • • • • C om plem ent to KSB546 C ollector-B ase Voltage: V Cb o = 2 0 0 V C ollecto r Current: lc=2A C ollecto r D issipation: Pc=25W Tc=25°C ABSOLUTE MAXIMUM RATINGS Rating Unit
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KSD401
KSB546
O-220
500uA,
KSB546
KSD401
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Untitled
Abstract: No abstract text available
Text: KSD401 NPN EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT • • • • Complement to KSB546 Collector-Base Vbltage VCBo =200V Collector Current lc=2A Collector Dissipation PC=25W Tc=25°C TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol
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KSD401
KSB546
O-220
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR KSB546 TV VERTICAL DEFLECTION OUTPUT • • • • C om plem ent to KSD401 C ollector-B ase Voltage: V Cbo = -200V C ollecto r C urrent: lc = -2A C ollecto r D issipation: Pc= 2 5W T c=25°C ABSOLUTE MAXIMUM RATINGS Characteristic
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KSB546
KSD401
-200V
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C25W
Abstract: No abstract text available
Text: KSB546 PNP EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT TO-220 • Com plem en t to KS0401 • Collector-B ase Voltage V Cb o = -2 0 0 V • C ollector Current lc = - 2 A • C ollector Dissipation P C=25W Tc =25°C ABSOLUTE MAXIMUM RATINGS
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KSB546
KS0401
O-220
--10mA,
-150V,
C25W
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Untitled
Abstract: No abstract text available
Text: KSB546 PNP EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT • • • • Complement to KSD401 Collector-Base Voltage: V C b o = -200V Collector Current: lc = -2A Collector Dissipation: Pc= 25W Tc=25°C ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage
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OCR Scan
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PDF
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KSB546
KSD401
-200V
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Untitled
Abstract: No abstract text available
Text: KSD401 NPN EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT • • • • Complement to KSB546 Collector-Base Voltage: V Cbo = 2 0 0 V Collector Current: lc=2A Collector Dissipation: Pc=25W Tc=25°C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol
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KSD401
KSB546
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TS 4142
Abstract: 18Oi S03 pnp KSD401 KSD526 samsung tv
Text: SAMSUNG SEMICONDUCTOR 14E INC KSB546 D I T 'ib M m a 0 0 0 7 SOG PNP EPITAXIAL SILICON TRANSISTOR - T 33- TV VERTICAL DEFLECTION OUTPUT • • • • C om plem ent to KSD401 C ollector-Base Voltage Vcso = -2 0 0 V C ollecto r C urrent lc = - 2 A C ollecto r D issipation PC=25W Tc =25°C
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ksb546
KSD401
-200V
O-220
ksb601
r-33-Ã
TS 4142
18Oi
S03 pnp
KSD401
KSD526
samsung tv
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KSD401
Abstract: KSB546
Text: PNP EPITAXIAL SILICON TRANSISTOR KSB546 TV VERTICAL DEFLECTION OUTPUT • • • • C o m p le m e n t to K S D 401 C o lle c to r-B a s e V o lta g e : V C b o = -2 0 0 V C o lle c to r C u rre n t: lc = -2 A C o lle c to r D is s ip a tio n : P c = 2 5 W T c = 2 5 °C
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KSB546
KSD401
-200V
O-220
500nA,
KSD401
KSB546
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ksb546
Abstract: No abstract text available
Text: KSB546 PNP EPITAXIAL SILICON TRANSISTOR TV VERTICAL DEFLECTION OUTPUT • Complement to KSD401 • Collector-Base Voltage V 0 e o = -200V • Collector Current l c = -2A • Collector Dissipation Pc= 25W Tc=25'C ABSOLUTE MAXIMUM RATINGS Rating Unit VcEO
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KSB546
KSD401
-200V
500mA,
ksb546
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