KRC285U Search Results

KRC285U Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
KRC285U		Korea Electronics	Audio Muting BRTs Switching Application. Audio Muting Application.		Original	PDF

KRC285U Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
marking MU Abstract: KRC285U Text: SEMICONDUCTOR KRC285U MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking MU 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark MU KRC285U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method	Original	PDF	KRC285U marking MU KRC285U
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original	PDF
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR KRC281U~KRC286U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ・High emitter-base voltage : VEBO=25V Min ・High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ・Low on resistance : Ron=1Ω(Typ.) (IB=5mA)	Original	PDF	KRC281U KRC286U KRC281U KRC282U KRC284U KRC285U KRC283U
KRC286U Abstract: KRC281U KRC282U KRC283U KRC284U KRC285U Text: SEMICONDUCTOR KRC281U~KRC286U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES E High emitter-base voltage : VEBO=25V Min B M High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA)	Original	PDF	KRC281U KRC286U KRC281U KRC282U KRC285U KRC283U KRC284U KRC286U KRC282U KRC283U KRC284U KRC285U
KRC285U Abstract: KRC286U audio transistor KRC281U KRC282U KRC283U KRC284U Text: SEMICONDUCTOR KRC281U~KRC286U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ・High emitter-base voltage : VEBO=25V Min ・High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ・Low on resistance : Ron=1Ω(Typ.) (IB=5mA)	Original	PDF	KRC281U KRC286U KRC281U KRC282U KRC285U KRC283U KRC284U KRC285U KRC286U audio transistor KRC282U KRC283U KRC284U