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    phototransistor peak wave sensitivity 600 nm

    Abstract: KPT08
    Text: Si Phototransistor KPT081M31 KPT081M31 Features φ3.8±0.2 • NPN phototransistor • Transparent epoxy potting • Low leak current φ3.0±0.2 24MIN 1.5MAX 5.3±0.5 • Optical switches • Optical encoders • Photo-isolator • Camera stroboscopes • Infrared sensors


    Original     		PDF KPT081M31 24MIN phototransistor peak wave sensitivity 600 nm KPT08

    npn phototransistor

    Abstract: phototransistor 600 nm
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Si Phototransistor KPT081M31 Features •NPN phototransistor •Transparent epoxy mold •Low leak current Dimensions (unit: mm) Applications •Optical switches •Optical encoders •Photo-isolator


    Original     		PDF 2002/95/EC) KPT081M31 0905/KPT081M31) npn phototransistor phototransistor 600 nm