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    KM48S16030A Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM48S16030A Samsung Electronics 128Mbit SDRAM 4M x 8-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    KM48S16030AT-G/F10 Samsung Electronics 4M x 8-Bit x 4 banks synchronous DRAM. Max freq. 66 MHz(CL=2&3). Interface LVTTL Original PDF
    KM48S16030AT-G/F8 Samsung Electronics 4M x 8-Bit x 4 Banks Synchronous DRAM Original PDF
    KM48S16030AT-G/FA Samsung Electronics 4M x 8-Bit x 4 Banks Synchronous DRAM Original PDF
    KM48S16030AT-G/FH Samsung Electronics 4M x 8-Bit x 4 Banks Synchronous DRAM Original PDF
    KM48S16030AT-G/FL Samsung Electronics 4M x 8-Bit x 4 Banks Synchronous DRAM Original PDF

    KM48S16030A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM48S16030A

    Abstract: No abstract text available
    Text: KM48S16030A CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Jun. 1999 KM48S16030A CMOS SDRAM Revision History Revision 0.0 May 15, 1999


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    PDF KM48S16030A 128Mbit A10/AP KM48S16030A

    Untitled

    Abstract: No abstract text available
    Text: KM48S16030A CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 May 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 May. 1999 KM48S16030A CMOS SDRAM Revision History Revision 0.0 May 15, 1999


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    PDF KM48S16030A 128Mbit A10/AP

    Untitled

    Abstract: No abstract text available
    Text: PC100 Unbuffered DIMM KMM366S3323AT Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


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    PDF KMM366S3323AT PC100 118DIA 000DIA 16Mx8 KM48S16030AT

    KMM466S1723AT3-F0

    Abstract: kmm466s1723
    Text: PC66 SODIMM KMM466S1723AT3 Revision History Revision 0.0 July 5, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


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    PDF KMM466S1723AT3 16Mx8 KM48S16030AT KMM466S1723AT3-F0 kmm466s1723

    KMM466S1723AT2

    Abstract: No abstract text available
    Text: KMM466S1723AT2 PC66 SODIMM Revision History Revision 0.0 July 5, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


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    PDF KMM466S1723AT2 16Mx8 KM48S16030AT KMM466S1723AT2

    Untitled

    Abstract: No abstract text available
    Text: PC100 Unbuffered DIMM KMM366S1723ATS Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


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    PDF KMM366S1723ATS PC100 118DIA 000DIA 16Mx8 KM48S16030AT

    KMM366S924BTS

    Abstract: 64Mb samsung SDRAM pc133 sdram pc133 SDRAM DIMM KMM366S1723ATS-GA KMM374S823DTS-GA KM416S8030BT
    Text: PC133 Unbuffered DIMM SERIAL PRESENCE DETECT Unbuffered SDRAM DIMM 168pin PC133 4Layer SPD Specification REV. 0.2 Nov. 1999 REV. 0.2 Nov. 1999 PC133 Unbuffered DIMM SERIAL PRESENCE DETECT KMM366S823DTS-GA ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü Organization : 8Mx64


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    PDF PC133 168pin) KMM366S823DTS-GA 8Mx64 KM48S8030DT-GA 375mil 4K/64ms 128byte KMM366S924BTS 64Mb samsung SDRAM pc133 sdram pc133 SDRAM DIMM KMM366S1723ATS-GA KMM374S823DTS-GA KM416S8030BT

    Untitled

    Abstract: No abstract text available
    Text: KMM374S1723ATS PC100 Unbuffered DIMM Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


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    PDF KMM374S1723ATS PC100 118DIA 000DIA 16Mx8 KM48S16030AT

    "simm 72 pin"

    Abstract: simm-72 timing simm 72 pin simm 72pin HSD8M32M4V HSD32M32M4V
    Text: HANBit HSD8M32M4V Synchronous DRAM Module 32Mbyte 8M x 32-Bit 72pin-SIMM based on 16Mx8, 4Banks, 4K Ref., 3.3V Part No. HSD8M32M4V GENERAL DESCRIPTION The HSD8M32M4V is a 8M x 32 bit Synchronous Dynamic RAM high density memory module. The module consists of


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    PDF HSD8M32M4V 32Mbyte 32-Bit 72pin-SIMM 16Mx8, HSD8M32M4V 72-pin, HSD8M32M4V-F12 "simm 72 pin" simm-72 timing simm 72 pin simm 72pin HSD32M32M4V

    CDC2509

    Abstract: No abstract text available
    Text: PC100 Registered DIMM KMM377S1723AT3 Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


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    PDF KMM377S1723AT3 PC100 118DIA 000DIA 16Mx8 KM48S16030AT CDC2509

    Untitled

    Abstract: No abstract text available
    Text: PC100 Unbuffered DIMM KMM374S3323AT Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


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    PDF KMM374S3323AT PC100 118DIA 000DIA 16Mx8 KM48S16030AT

    KM416S8030BT

    Abstract: sAMSUNG PC100-322-620
    Text: SERIAL PRESENCE DETECT PC100 Unbuffered DIMM PC100 Unbuffered SDRAM DIMM 168pin 6 Layer SPD Specification Rev. 0.0 November 1999 Rev. 0.0 Nov. 1999 SERIAL PRESENCE DETECT PC100 Unbuffered DIMM • Revision History [Revision 0.0] November 18, 1999 Merged PC100 SDRAM 6 Layer Unbuffered DIMMs based 64SD D-die, 128SD M/A/B-die, 256SD A-die.


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    PDF PC100 168pin) 128SD 256SD KMM366S824DT KMM366S1623DT KMM374S1623DT KM416S8030BT sAMSUNG PC100-322-620

    KMM374S1723ATS-GA

    Abstract: No abstract text available
    Text: KMM374S1723ATS PC133 Unbuffered DIMM Revision History Revision 0.0 May, 1999 • PC133 first published. REV. 0 May 1999 KMM374S1723ATS PC133 Unbuffered DIMM KMM374S1723ATS SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


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    PDF KMM374S1723ATS PC133 KMM374S1723ATS 16Mx72 16Mx8, KMM374S1723ATS-GA

    KMM374S3323AT-GA

    Abstract: No abstract text available
    Text: KMM374S3323AT PC133 Unbuffered DIMM Revision History Revision 0.0 May, 1999 • PC133 first published. Revision 0.1 (June, 1999) - Changed PCB Dimensions in PACKAGE DIMENSIONS REV. 0.1 June 1999 KMM374S3323AT PC133 Unbuffered DIMM KMM374S3323AT SDRAM DIMM


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    PDF KMM374S3323AT PC133 KMM374S3323AT 32Mx72 16Mx8, KMM374S3323AT-GA

    HSD16M32M4V

    Abstract: HSD32M32M4V HSD8M32M4V simm72
    Text: HANBit HSD16M32M4V Synchronous DRAM Module 64Mbyte 16M x 32-Bit 72-Pin SIMM based on 16Mx8, 4Banks, 4K Ref., 3.3V Part No. HSD16M32M4V GENERAL DESCRIPTION The HSD16M32M4V is a 16M x 32 bit Synchronous Dynamic RAM high density memory module. The module consists


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    PDF HSD16M32M4V 64Mbyte 32-Bit 72-Pin 16Mx8, HSD16M32M4V 72-pin, HSD16M32M4V-F12 HSD32M32M4V HSD8M32M4V simm72

    CDC2509

    Abstract: No abstract text available
    Text: PC100 Registered DIMM KMM377S3323AT Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


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    PDF KMM377S3323AT PC100 118DIA 000DIA 16Mx8 KM48S16030AT CDC2509