Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM23C8001H CMOS MASK ROM 8M-Bit 1M X 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C8001H is a fully static mask programmable ROM organized 1 ,0 4 8 ,5 7 6 X 8 bit. It is fabricated using silicon-gate CMOS process technology.
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KM23C8001H
KM23C8001H
100ns
32-pin,
sing60
KM23C8001H)
KM23C8001HG)
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KM23C8001B
Abstract: KM23C8001
Text: KM23C8001B G CMOS MASK ROM 8M-Bit (1M X 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C8001B is a fully static mask programmable ROM organized 1 ,0 4 8 ,5 7 6 X 8 bit. It is fabricated using silicon-gate CMOS process technology. 1,048,576 x 8 bit organization
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KM23C8001B
100ns
32-DIP
KM23V8001BG
KM23C8001B)
KM23C8001BG)
KM23C8001
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Untitled
Abstract: No abstract text available
Text: KM23C8001A CMOS MASK ROM 8M-Bit 1M X 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C8001A is a fully static mask programmable ROM organized 1 ,0 4 8 ,5 7 6 X 8 bit. It is fabricated using silicon-gate CMOS process technology. 1,048,576 k 8 bit organization
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KM23C8001A
KM23C8001A
150ns
32-pin,
KM23C8001A)
KM23C8001AG)
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM23C8001H CMOS MASK ROM 8M-Bit 1M X 8 CMOS MASK ROM FEATURES • • • • 1,048,576 » 8 bit organization Fast access time; 100ns (max.) Supply voltage: single + 5V C urrent consumption O perating: 50mA (max.) • • • • Fully static operation
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KM23C8001H
100ns
KM23C8001H
KM23C8001H)
KM23C8001HG)
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KM23C8001A
Abstract: No abstract text available
Text: KM23C8001A G CMOS MASK ROM 8M-Bit (1M X 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C8001A is a fully static mask programmable ROM organized 1 ,0 4 8 ,5 7 6 X 8 bit. It is fabricated using silicon-gate CMOS process technology. 1 ,0 4 8 ,5 7 6 x 8 bit organization
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KM23C8001A
150ns
32-DIP
KM23C8
KM23C8001A)
KM23C8001AG)
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E D • 7Tb4m2 KM23C8001A G 0017G43 71fl HSflfiK CMOS MASK ROM 8M-Bit (1M X 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C8001A is a fully static mask programmable ROM organized 1 ,0 4 8 ,5 7 6 X 8 bit. It is fabricated using
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KM23C8001A
0017G43
576x8
150ns
32-pin,
OG17Q4b
KM23C8001A)
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KM23C8001B
Abstract: No abstract text available
Text: S A M S U N G E L E C T R O N I C S INC b7E D • 7%H1HS KM23C8001 B G 0 0 17 Q4 7 3b3 « S f l S K CMOS MASK ROM 8M-Bit (1M X 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C8001B is a fully static mask programmable ROM organized 1 ,0 4 8 ,5 7 6 X 8 bit. It is fabricated using
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KM23C8001
KM23C8001B
100ns
32-pin,
KM23C8001B)
KM23C8001BG)
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KM23C8001
Abstract: KM23C8001A
Text: KM23C8001A CMOS MASK ROM 8M-Bit 1M X 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C0OO1A is a fu lly s ta tic m ask program m able ROM organized 1 ,0 4 8 ,5 7 6 X 0 bit It is fabricated using silicon-gate C M O S process technology.
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KM23C8001A
150ns
KM23C0OO1A
KM23C8001A
32-DIP
KM23C8001A)
KM23C8001AG)
KM23C8001
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uPD23C4000
Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A
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64Kx4
KM424C64
MT42C4064
uPD41264
uPD42264
HM53461
TMS4461
64Kx8
256KX4
KM428C64
uPD23C4000
93c46 atmel
sony Cross Reference
atmel 93c66
HN62404P
93C46L
rom at29c010
Hitachi SRAM cross reference
x2864a
UPD23C2000
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41C1000
Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258
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41C256
41C257
41C258
41C464
41C466
41C1000
44C256
44C258
44C1002
TC51257
fujitsu 814100
TC 55464 toshiba
HN62304
hn623257
658128
816b
hn62324
M7202A
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23C8001A
Abstract: 23C8001 KM23C2001 2001h 23c4001
Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3 4 II. EEPROM DATA SHEETS 1 2 3 4. 5 6. 7. 8. 9. 10 11. 12 13. 14. III. In tro d u ctio n. v -. 11 Product G uide. \ . 28
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32000G
32000FP.
23C32100G
32100FP
23C8001A
23C8001
KM23C2001
2001h
23c4001
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K93C46
Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257
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416C256
14800A
14900A
514170B
514280B
KM23C16000G
KM23C16100G
KM23C16000FP
KM23C16100FP
HN624017FB
K93C46
93cs46n
MB832001
hn62308
41C1000
93C46LN
41464
hn623257
HM63832
DT71256
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TC55B4257
Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264
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KM424C64
MT42C4064
uPD41264
uPD42264
HM53461
TMS4461
KM428C64
KM424C256
KM424C256A
TC524256
TC55B4257
93C46L
UPD23C4000
atmel 93c66
KM628512
Hitachi SRAM cross reference
atmel 93c57
TC55B465
upd23c8000
93c56v
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KMCJ532512
Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7
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KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
KM44C256C-6
KM44C256CL-6
KM44C256CSL-6
KM41C4000C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000C-8
KMCJ532512
KM23C1000-20
KM28C64B
KMM594
KM718B90-12
zip 40pin
30-pin simm memory "16m x 8"
KM41C4000C-6
KM41C16000ALL
KM48V2104AL
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KMM591000AN
Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC
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KM41C256P
KM41C256J
KM41C256Z
KM41C257P
KM41C257J
KM41C257Z
KM41C258P
KM41C258J
KM41C258Z
KM41C464P
KMM591000AN
KM424C256Z
KMM591000B
KM41C464
KMM584000B
4Mx1 nibble
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al 232 nec
Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258
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KM41C256
KM41C257
KM41C258
KM41C464
KM41C466
KM41C1000
KM41C1001
KM41C1002
KM44C256
KM44C258
al 232 nec
TC55B4257
MB832001
NM9306
eeprom Cross Reference
D41264
TC5116100
HN28C256
NM9307
oki cross reference
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KM23C8001
Abstract: 32-sop
Text: MEMORY ICs FUNCTION GUIDE 2.6 MASK ROM Capacity Part Number Orgrization Speed ns Tech. Features Package Remark 256K KM23C256(G) 32Kx8 120/150/200 CMOS Programmable C E & OE 28DIP(32SOP) Now 512K KM23C512(G) 6 4 K *8 120/150/200 CMOS Programmable C E & O E
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KM23C256
KM23C512
KC23C1000
KM23C1001
KM23C1010
KM23C1010J
KM23C1011
32Kx8
128Kx
256KX
KM23C8001
32-sop
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