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    N-CHANNEL MOS FIELD EFFECT TRANSISTOR Power Field-Effect Transistor
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    KHB7D0N65P1 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KHB7D0N65P1 Korea Electronics N CHANNEL MOS FIELD EFFECT TRANSISTOR Original PDF
    KHB7D0N65P1 Korea Electronics N CHANNEL MOS FIELD EFFECT TRANSISTOR Original PDF

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    KHB7D0N65F1

    Abstract: RL46 KHB7D0N65F KHB7D0N65F2 KHB7D0N65P1
    Text: SEMICONDUCTOR KHB7D0N65P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB7D0N65P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


    Original     		PDF KHB7D0N65P1/F1/F2 KHB7D0N65P1 Fig15. Fig16. Fig17. KHB7D0N65F1 RL46 KHB7D0N65F KHB7D0N65F2 KHB7D0N65P1

    khb7d0n65

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KHB7D0N65P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB7D0N65P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


    Original     		PDF KHB7D0N65P1/F1/F2 KHB7D0N65P1 KHB7D0N65F1 KHB7D0N65F2 KHB7D0N65F1 khb7d0n65

    KHB7D0N65F1

    Abstract: KHB7D0N65F RL46 KHB7D0N65P1
    Text: KHB7D0N65P1/F1 SEMICONDUCTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR TECHNICAL DATA General Description KHB7D0N65P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


    Original     		PDF KHB7D0N65P1/F1 KHB7D0N65P1 KHB7D0N65F1 KHB7D0N65F RL46 KHB7D0N65P1

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KHB7D0N65P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


    Original     		PDF KHB7D0N65P1/F1/F2

    rl46

    Abstract: KHB7D0N65F KHB7D0N65F1 32nC KHB7D0N65P1 M/smd rl46
    Text: SEMICONDUCTOR KHB7D0N65P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB7D0N65P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor


    Original     		PDF KHB7D0N65P1/F1/F2 KHB7D0N65P1 dI/dt200A/, rl46 KHB7D0N65F KHB7D0N65F1 32nC KHB7D0N65P1 M/smd rl46

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF