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Text: SEMICONDUCTOR KDS166T TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E FEATURES B Small package : TSV. 1 Low forward voltage. G Fast reverse recovery time. B F 3 CHARACTERISTIC C SYMBOL RATING UNIT VRM 85 V Reverse Voltage
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marking E5
Abstract: KDS166T S5 MARKING marking S5 E5 MARKING
Text: SEMICONDUCTOR KDS166T MARKING SPECIFICATION TSV PACKAGE 1. Marking method Laser Marking S5 1 No. JA 2. Marking 2 Item Marking Description Device Mark S5 KDS166T * Lot No. JA 2005. 1st Week [ 0 : 1st Chracter, 1:2nd Character ] Note * Lot No. marking method
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KDS166T
marking E5
KDS166T
S5 MARKING
marking S5
E5 MARKING
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS166T TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small package : TSV. ・Low forward voltage. ・Fast reverse recovery time. ・Small total capacitance. MAXIMUM RATING Ta=25℃ CHARACTERISTIC
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KDS166T
100mA
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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Text: S EM IC O N D U C T O R KDS166T T E C H N I C A L DATA SI LI CON EPI TAXI AL PLANAR DIODE ULTRA HIGH SPEED SW ITC H IN G A PPLICATION. FEA T U RE S • Sm all package : TSV. DIM • L ow forw ard voltage. • Fast reverse recovery tim e. -i— • Sm all total capacitance.
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