marking SC
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS166E MARKING SPECIFICATION TESV PACKAGE 1. Marking method Laser Marking SC 1 0 1 2. Marking 2 3 No. Item Marking Description Device Mark SC KDS166E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Index
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KDS166E
marking SC
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS166E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. B FEATURES B1 ・Small package : TESV. C 1 2 DIM A 5 A1 B B1 C D D A ・Small total capacitance. A1 ・Fast reverse recovery time. C ・Low forward voltage.
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KDS166E
100mA
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS166E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small package : TESV. ・Low forward voltage. ・Fast reverse recovery time. ・Small total capacitance. MAXIMUM RATING Ta=25℃ CHARACTERISTIC
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KDS166E
100mA
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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