KDR582S
Abstract: No abstract text available
Text: SEMICONDUCTOR KDR582S TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE FOR HIGH SPEED SWITCHING. FEATURES ・Low reverse current, low capacitance. MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING UNIT Repetitive Peak Reverse Voltage VR 4 V Reverse Voltage
|
Original
|
PDF
|
KDR582S
10kHz
KDR582S
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDR582S TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE FOR HIGH SPEED SWITCHING. FEATURES 2009. 12. 9 Revision No : 0 1/2
|
Original
|
PDF
|
KDR582S
|
marking M.C sot23
Abstract: KDR582S sot-23 Marking MC MC SOT23
Text: SEMICONDUCTOR KDR582S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking MC 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark MC KDR582S hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
|
Original
|
PDF
|
KDR582S
OT-23
marking M.C sot23
KDR582S
sot-23 Marking MC
MC SOT23
|
KDR582S
Abstract: P* SOT-23
Text: SEMICONDUCTOR KDR582S TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE FOR HIGH SPEED SWITCHING. FEATURES ・Low reverse current, low capacitance. E B L D L 3 H G A 2 1 MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING UNIT Repetitive Peak Reverse Voltage VR
|
Original
|
PDF
|
KDR582S
OT-23
10kHz
KDR582S
P* SOT-23
|
KDR582S
Abstract: No abstract text available
Text: S EM IC O N D U C T O R KDR582S TECHNI CAL DATA S C H O T T K Y BARRI ER T YP E DIODE FOR HIGH SPEED SWITCHING. FEA T U RE S • Low reverse current, low capacitance. B L L D IM _ i ° X ! M A X IM U M RA TING Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Repetitive Peak Reverse Voltage
|
OCR Scan
|
PDF
|
KDR582S
OT-23
KDR582S
|