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    Samsung Electronics Co. Ltd K4X56163PGFGC3

    DDR DRAM, 16MX16, 6ns, CMOS, PBGA60
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA K4X56163PGFGC3 68
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    K4X56163PG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4X56163PG Samsung Electronics 16M x16 Mobile-DDR SDRAM Original PDF

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    K4X56163PG

    Abstract: DDR222 DDR266
    Text: K4X56163PG - L F E/G Mobile-DDR SDRAM 16M x16 Mobile-DDR SDRAM FEATURES • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK)


    Original
    PDF K4X56163PG DDR222 DDR266

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original
    PDF BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G