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    K2605 Price and Stock

    Silicon Laboratories Inc SIWX917-DK2605A

    SIWX917 WI-FI 6 DEV KIT
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    DigiKey SIWX917-DK2605A Box 231 1
    • 1 $41.15
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    • 100 $41.15
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    Newark SIWX917-DK2605A Bulk 9 1
    • 1 $41.6
    • 10 $41.6
    • 100 $41.6
    • 1000 $41.6
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    Silicon Laboratories Inc SiWx917-DK2605A

    Multiprotocol Development Tools SiWx917 Wi-Fi 6 Dev Kit
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    Mouser Electronics SiWx917-DK2605A 18
    • 1 $40
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    • 100 $40
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    Toshiba America Electronic Components 2SK2605

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    Bristol Electronics 2SK2605 364
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    ComSIT USA 2SK2605 372
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    Vishay Intertechnologies 1N5818-E3/54

    Schottky Diodes & Rectifiers Vr/30V Io/1A
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    TTI 1N5818-E3/54 Reel 11,000 5,500
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    • 10000 $0.084
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    Bourns Inc 4605X-101-103LF

    Resistor Networks & Arrays 5pins 10Kohms Bussed
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    TTI 4605X-101-103LF Bulk 2,000 35
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    • 100 $0.121
    • 1000 $0.08
    • 10000 $0.078
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    K2605 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K2605

    Abstract: K2605 transistor 2SK2605 K2605 TOSHIBA
    Text: K2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII K2605 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.8 S (typ.) z Low leakage current


    Original     		2SK2605 K2605 K2605 transistor 2SK2605 K2605 TOSHIBA PDF

    k2605

    Abstract: K2605 transistor K2605 TOSHIBA 2SK2605 transistor k2605
    Text: K2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII K2605 Switching Regulator Applications z Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) : |Yfs| = 3.8 S (typ.) z High forward transfer admittance z Low leakage current


    Original     		2SK2605 k2605 K2605 transistor K2605 TOSHIBA 2SK2605 transistor k2605 PDF

    k2605

    Abstract: K2605 transistor K2605 TOSHIBA transistor k2605 024 marking code 2SK2605 transistor 2sk2605
    Text: K2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII K2605 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance : |Yfs| = 3.8 S (typ.) Low leakage current


    Original     		2SK2605 k2605 K2605 transistor K2605 TOSHIBA transistor k2605 024 marking code 2SK2605 transistor 2sk2605 PDF

    K2605

    Abstract: K2605 transistor K2605 TOSHIBA transistor k2605 2SK2605 transistor 2sk2605 2sK2605 TRANSISTOR
    Text: K2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII K2605 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.8 S (typ.) z Low leakage current


    Original     		2SK2605 45oducts K2605 K2605 transistor K2605 TOSHIBA transistor k2605 2SK2605 transistor 2sk2605 2sK2605 TRANSISTOR PDF

    DMK2307-000

    Abstract: DMK2784-000 DMK2784 DMK2605-000 DMK50 mixer diodes DMK2606-000 DMK2791-000 DMK2860-000 diode 226
    Text: EBAIphi GaAs Schottky Barrier Mixer Diodes CMK and DMK Series Features Low N oise Figure Low Series Resistance Excellent Cutoff, Low Junction Capacitance Ideal for Image Enhancem ent Mixers Passivated Planar Construction for Reliability Description A lpha’s series of gallium arsenide Schottky barrier


    OCR Scan     		AS004L2-11 AT001D3â AK004M2-11 AS004M1-08 AT001D4-31 AK004R2-11 AS004M1-11 AT001D6-31 AK006L1-00 AS004M2-08 DMK2307-000 DMK2784-000 DMK2784 DMK2605-000 DMK50 mixer diodes DMK2606-000 DMK2791-000 DMK2860-000 diode 226 PDF

    k2605

    Abstract: k2862 K3353 K4058 K3353-000 "frequency mixer" ku k338 K2307 K2860-000
    Text: EDüAlph GaAs Schottky Barrier Mixer Diodes CMK and DMK Series Features Low Noise Figure Low Series Resistance Excellent Cutoff, Low Junction Capacitance Ideal for Image Enhancement Mixers Passivated Planar Construction for Reliability Description Alpha’s series of gallium arsenide Schottky barrier


    OCR Scan     		0SflS443 k2605 k2862 K3353 K4058 K3353-000 "frequency mixer" ku k338 K2307 K2860-000 PDF