Untitled
Abstract: No abstract text available
Text: July 1996 Revision 1.0 DATA SHEET SDC4UV6482- 67/84/100/125 T-S 32MByte (4M x 64) CMOS Synchronous DRAM Module General Description IN AD FO V A R N M C AT ED IO N The SDC4UV6482-(67/84/100/125)T-S is a high performance, 32-megabtye synchronous, dynamic RAM module organized as
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SDC4UV6482-
32MByte
32-megabtye
168-pin,
MB81117822A-
MP-SDRAMM-DS-20320-7/96
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Untitled
Abstract: No abstract text available
Text: KM611001/L CMOS SRAM 1M x 1Bit High-Speed CMOS SRAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 40 mA(Max.) (CMOS): 2 mA(Max.) 0.5 mA(Max.) - L-ver. Operating KM611001/L -20 : 130 mA(Max.)
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KM611001/L
KM611001/L
KM611001P/LP
28-DIP-400
KM611001J/LJ
28-SOJ-400A
576-bit
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Untitled
Abstract: No abstract text available
Text: a HIP4086 HARRIS S E M I C O N D U C T O R July1996 80V, 0.5A Three Phase Driver Features Description • Independently Drives 6 N-Channel MOSFETs in Three Phase Bridge Configuration The HIP4086 is a Three Phase Bridge N-Channel MOSFET driver IC. The HIP4086 is specifically targeted for PWM
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HIP4086
HIP4086
HIP4081,
HIP4081
00b70e
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Untitled
Abstract: No abstract text available
Text: ISSI IS62C1024 128K x 8 HIGH-SPEED CMOS STATIC RAM JULY1996 FEATURES DESCRIPTION • High-speed access time: 35, 45, 55, 70 ns The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSI's highperformance CMOS technology. This highly reliable process
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IS62C1024
JULY1996
IS62C1024
072-word
SR81995C024
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I11III1
Abstract: energy meter single phase NCMOS TLV2211 TLV2211IDBV TLV2211Y
Text: TLV2211, TLV2211Y Advanced LinCMOS RAIL-TO-RAIL MICROPOWER SINGLE OPERATIONAL AMPLIFIERS S L0S 156A - MAY 1996 -R E V IS E D JULY1996 • Output Swing Includes Both Supply Rails • • • Low Noise . . . 18 nWVHz Typ at f = 1 kHz Low Input Bias Current. . . 1 pA Typ
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TLV2211,
TLV2211Y
SLOS156A
OT-23
TLV2211
clbl724
010342e!
TLV2211Y
I11III1
energy meter single phase
NCMOS
TLV2211IDBV
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Untitled
Abstract: No abstract text available
Text: <P July 1996 Revision 1.0 FUJI DATA SH EET - “ SDC4UV6482- 67/84/100/125 T-S 32MByte (4M x 64) CMOS Synchronous DRAM Module General Description The SDC4UV6482-(67/84/100/125)T-S is a high performance, 32-megabtye synchronous, dynamic RAM module organized as
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SDC4UV6482-
32MByte
32-megabtye
168-pin,
B81117822A-
200mV.
37iH75b
V6482-
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Untitled
Abstract: No abstract text available
Text: KM611001/L CMOS SRAM 1M X 1Bit High-Speed CMOS SRAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns Max. • Low Power Dissipation Standby (TTL) : 40mA(Max.) (CMOS): 2mA(Max.) 0.5 mA(Max.) - L-ver. Operating KM611001/L-20:130 mA(Max.) KM611001/L-25:110 mA(Max.)
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KM611001/L
KM611001/L-20
KM611001/L-25
KM611001/L-3
100mA
KM611001P/LP:
28-DIP-400
KM611001J/LJ:
28-SQJ-400A
KM611001/L
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Untitled
Abstract: No abstract text available
Text: 256K x 8 CMOS SRAM mosaic semiconductor, inc. MS M8256-25/35/45/55 Issue 4.1 : July 1996 262,144 x 8 CMOS High Speed Static RAM 'Description The MSM8256 is a 2Mbit CMOS high speed static RAM organised as a 256K x 8. This is available in a standard 0.6" DIL package or a
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M8256-25/35/45/55
MSM8256
MIL-STD-883.
700mW
MSM8256-25/35/45/55
MSM8256SLMB-45
MIL-STD-883
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