Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    JANUARY1995 Search Results

    JANUARY1995 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    V68MLA1206T23

    Abstract: V14MLA0805 V14MLA0805L V14MLA1206 V18MLA0805 V18MLA0805L .MODEL BD231
    Text: S ML Series HARRIS S E M I C O N D U C T O R Multilayer Surface Mount Transient Surge Suppressors January1995 Features • Leadless Chip Form - “Zero” Lead Inductance • Multilayer Construction Technology • -55°C to +125°C Operating Temperature Range


    OCR Scan     		PDF MIL-STD-3015 500nA. bD231 V68MLA1206T23 V14MLA0805 V14MLA0805L V14MLA1206 V18MLA0805 V18MLA0805L .MODEL BD231

    Untitled

    Abstract: No abstract text available
    Text: HA5023/883 S Dual 125MHz Video Current Feedback Amplifier January1995 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Wide Unity Gain B andw idth. 125MHz


    OCR Scan     		PDF HA5023/883 125MHz MIL-STD883 125MHz HA5023/883 HA-5020/883 VM700A

    80c196nu

    Abstract: p6506
    Text: in te i M W Ä ß C ii D iF !ì» T M 80C196NU COMMERCIAL CHMOS 16-BIT MICROCONTROLLER 50 MHz Operation* 1 Mbyte of Linear Address Space 1000 Bytes of Register RAM Register-register Architecture Footprint and Functionally Compatible with the 80C196NP 2x the Performance of the 80C196NP


    OCR Scan     		PDF 80C196NU 16-BIT 16-bit) 32-bit 100-pin USA/MS095-059 0/SMS95 p6506

    45l50

    Abstract: V53C104H
    Text: M O S E L V I T E L IC V53C104H U LTR A -H IG H PERFO RM ANCE, L O W P O W ER 2 5 6 K X 4 B IT F A S T P A G E M O D E CM O S D YN A M IC R A M HIGH PERFORMANCE 45/45L 50/50L 55/55L 60/60L Max. RAS Access Time, 1RAC 45 ns 50 ns 55 ns 60 ns Max. Column Address Access Time, (tCAA)


    OCR Scan     		PDF V53C104H 45/45L 50/50L 55/55L 60/60L 110ns V53C104HL V53C104H-60 V53C104H-1 V53C104H 45l50

    Untitled

    Abstract: No abstract text available
    Text: M O S E L V IT E L IC V100J9 and V100J8 1M X 9, 1M X 8 BIT FAST PAGE MODE CMOS DYNAMIC RAM MEMORY MODULE 60/60L 70/70L 80/80L Max. RAS Access Time, tRAf0 HIGH PERFORMANCE V100J8/9 60 ns 70 ns 80 ns Max. Column Address Access Time, (trA A 30 ns 35 ns 40 ns


    OCR Scan     		PDF V100J9 V100J8 60/60L 70/70L 80/80L V100J8/9 V100J8/9L V100S xzzzzzzzz7777777

    Untitled

    Abstract: No abstract text available
    Text: M O SEL VTTEUC PRELIMINARY V104J232 512K x 32 SIMM Features Description 524,288 x 32 bit organizations Utilizes 256K x 4 CMOS DRAMs Fast access times 70 ns, 80 ns, 100 ns Fast Page mode operation Low power dissipation _ CAS before RAS refresh, RAS only refresh, and


    OCR Scan     		PDF V104J232 72-lead V104J232 DD03350

    Untitled

    Abstract: No abstract text available
    Text: M O SEL V tTE LiC V53C8512N 3.3 VOLT, LO W POWER 512K x 8 AN D 5 1 2 K x 9 B IT FA S T PAGE MODE CMOS DYNAMIC RAM PRELIM INARY HIGH PERFORMANCE V53C8512N 60/60L 70/70L M ax. R A S A cce ss T im e, Orac 6 0 ns 70 ns M ax. C o lum n A d dre ss A cce ss T im e , tCAA)


    OCR Scan     		PDF V53C8512N 60/60L 70/70L V53C8S12NL V53C8512N January199S b3S33

    Untitled

    Abstract: No abstract text available
    Text: M O S EL V IT E L IC V53C 16258H 2 5 6 K X 16 P A G E M O D E C M O S D Y N A M IC R A M W ITH E X T E N D E D D A TA O U T P U T HIGH PERFORMANCE P R E LIM IN A R Y 45 50 55 60 Max. RAS Access Time, tRAc 45 ns 50 ns 55 ns 60 ns Max. Column Address Access Time, (tCAA)


    OCR Scan     		PDF 16258H V53C16258H V53C16258H b3S33Tl

    Untitled

    Abstract: No abstract text available
    Text: M O S E L V TTE U C PRELIMINARY V104J32 256K x 32 SIMM Features Description • ■ ■ ■ ■ ■ The V 104J32 Mem ory Module is organized as 262,144 x 32 bits in a 72-lead single-in-line module. The 256K x 32 memory module uses 8 Mosel-Viteiic 256K x 4 DRAMs. The x32 modules are ideal for use


    OCR Scan     		PDF V104J32 104J32 72-lead

    V53C1625BH

    Abstract: No abstract text available
    Text: M O SEL V IT E U C V53C16258H 256K X 16 PAG E MODE CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT HIGH PERFORMANCE PRELIMINARY 45 50 55 60 Max. RAS Access Time, tRAC 45 ns 50 ns 55 ns 60 ns Max. Column Address Access Time, Ocaa) 22 ns 25 ns 28 ns 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC)


    OCR Scan     		PDF V53C16258H 16-bit 40-pin V53C16258H V53C1625BH

    Untitled

    Abstract: No abstract text available
    Text: M O S E L V 1T E U C V53C104F HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE V53C104F Max. RAS Access Tim e, tRAC 60/60L 70/70L 80/80L 60 ns 70 ns 8 0 ns Max. Column Address Access Tim e, (tCAA) 3 0 ns 35 ns 4 0 ns


    OCR Scan     		PDF V53C104F V53C104F 60/60L 70/70L 80/80L V53C104FL 200pA V53C104F-80 104F-1 V53C104FL

    H7555

    Abstract: HEF4516
    Text: HEF4516B J I BINARY UP/DOWN COUNTER T h e H E F 4 5 1 6 B is an edge-triggered synchronous u p /d o w n 4 -b it b inary co u n ter w ith a clo ck in p u t C P , an u p /d o w n c o u n t co ntrol in p u t (U P /D N ), an active LO W c o u n t enable n p u t (C E ), an


    OCR Scan     		PDF HEF4516B January1995 7Z85123 H7555 HEF4516

    V53C1OON

    Abstract: No abstract text available
    Text: M O S E L V IT E L IC V53C100N HIGH PERFORMANCE, 3.3 VOLT 1M X 1 BIT FAST PAGE MODE CMOS DYNAMIC RAM 60/60L 70/70L 80/80L 60 ns 70 ns 80 ns Max. Column Address Access Time, tCAA 35 ns 40 ns 45 ns Max. CAS Access Time, (tCAC) 20 ns 25 ns 25 ns Min. Fast Page Mode Cycle Time, (1p c )


    OCR Scan     		PDF V53C100N 60/60L 70/70L 80/80L V53C100NL V53C100N-80 V53C100N 0G02722 V53C1OON

    V53C85

    Abstract: No abstract text available
    Text: M O SEL V iT E U C V53C8512 HIGH PERFORMANCE, LOW POWER 512K x 8 FAST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE V53C8512 PRELIMINARY 50/S0L 60/60L 70/70L Max. RAS Access Time, tRAc 50 ns 60 ns 70 ns Max. Column Address Access Time, (1CAA) 25 ns 30 ns 35 ns


    OCR Scan     		PDF V53C8512 V53C8512 50/S0L 60/60L 70/70L V53C8512L V53C8512L V53C85

    52C8128

    Abstract: V52C8128
    Text: M O SEL V tT E U C V52C8128 MULTIPORT VIDEO RAM WITH 128K X 8 DRAM AND 256 X 8 SAM 70 80 10 Max. RAS Access Time, tRAC 70 ns 80 ns 100 ns Max. CAS Access Time, (tCAC) 20 ns 25 ns 25 ns Max. Column Address Access Time, ( t ^ ) 35 ns 40 ns 50 ns Min. Fast Page Mode Cycle Time, (tPC)


    OCR Scan     		PDF V52C8128 52C8128 V52C8128 0D03E01 52C8128

    Untitled

    Abstract: No abstract text available
    Text: M O S E L V IT E L IC V53C8512 HIGH PERFORMANCE, LOW POWER 512K x 8 FAST PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 50/50L 60/60L 70/70L Max. RAS Access Time, Ìrac 50 ns 60 ns 70 ns Max. Column Address Access Time, <tCAA) 25 ns 30 ns 35 ns Min. Fast Page Mode Cycle Time, (tpc)


    OCR Scan     		PDF V53C8512 50/50L 60/60L 70/70L VS3C8512 V53C8512L

    Untitled

    Abstract: No abstract text available
    Text: M O S E L V IT E L IC V53C664A 64K x 16 B IT FA ST PAGE MODE BYTE WRITE CMOS DYNAMIC RAM 60/60L 70/70L 80/80L Max. RAS Access Time, tR A r 60 ns 70 ns 80 ns Max. Column Address Access Time, (tr l 4 ) 35 ns 40 ns 45 ns Min. Fast Page Mode Cycle Time, (tp r )


    OCR Scan     		PDF V53C664A 60/60L 70/70L 80/80L V53C664AL V53C664A 16-bit