Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    JUNE1996 Search Results

    JUNE1996 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    June 1996 Linear Technology LinearTechnology Chronicle Original PDF

    JUNE1996 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TLV2211

    Abstract: TLV2221 TLV2221CDBV TLV2221IDBV TLV2221Y
    Text: TLV2221, TLV2221Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS SLOS157A JUNE1996 – REVISED JANUARY 1997 D D D D D D D D DBV PACKAGE TOP VIEW Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz


    Original
    PDF TLV2221, TLV2221Y SLOS157A JUNE1996 TLV2221 TLV2211 TLV2221CDBV TLV2221IDBV TLV2221Y

    Untitled

    Abstract: No abstract text available
    Text: TLV2221, TLV2221Y Advanced LinCMOS RAILĆTOĆRAIL VERY LOWĆPOWER SINGLE OPERATIONAL AMPLIFIERS SLOS157B JUNE1996 − REVISED APRIL 2005 D D D D D D D D DBV PACKAGE TOP VIEW Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz


    Original
    PDF TLV2221, TLV2221Y SLOS157B JUNE1996 TLV2221 OT-23 TLV2231

    TLV2211

    Abstract: TLV2221 TLV2221CDBV TLV2221IDBV TLV2221Y
    Text: TLV2221, TLV2221Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS SLOS157A JUNE1996 – REVISED JANUARY 1997 D D D D D D D D DBV PACKAGE TOP VIEW Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz


    Original
    PDF TLV2221, TLV2221Y SLOS157A JUNE1996 TLV2221 TLV2211 TLV2221CDBV TLV2221IDBV TLV2221Y

    TLV2221IDBV

    Abstract: transistor 1012 2/88 TLV2211 TLV2221 TLV2221CDBV TLV2221Y TLV2231
    Text: TLV2221, TLV2221Y Advanced LinCMOS RAILĆTOĆRAIL VERY LOWĆPOWER SINGLE OPERATIONAL AMPLIFIERS SLOS157B JUNE1996 − REVISED APRIL 2005 D D D D D D D D DBV PACKAGE TOP VIEW Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz


    Original
    PDF TLV2221, TLV2221Y SLOS157B JUNE1996 TLV2221 OT-23 TLV2221IDBV transistor 1012 2/88 TLV2211 TLV2221CDBV TLV2221Y TLV2231

    Untitled

    Abstract: No abstract text available
    Text: TLV2221, TLV2221Y Advanced LinCMOS RAILĆTOĆRAIL VERY LOWĆPOWER SINGLE OPERATIONAL AMPLIFIERS SLOS157B JUNE1996 − REVISED APRIL 2005 D D D D D D D D DBV PACKAGE TOP VIEW Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz


    Original
    PDF TLV2221, TLV2221Y SLOS157B JUNE1996 TLV2221 OT-23 TLV2231

    TLV5592

    Abstract: TLV5592ED
    Text: TLV5592 2-BIT ANALOG-TO-DIGITAL CONVERTER FOR FLEXt PAGER CHIPSET SLAS145A JUNE1996 – REVISED DECEMBER 1997 D D D D D Supports FLEXt Protocol Messaging Systems With The TLV559X FLEX Decoder 3-Pole Butterworth Low-Pass Selectable Dual-Bandwidth Audio Filter


    Original
    PDF TLV5592 SLAS145A JUNE1996 TLV559X TLV5592 TLV5592ED

    amplifiers discontinued in 1996

    Abstract: transistor 1012 2/88 TLV2211 TLV2221 TLV2221CDBV TLV2221IDBV TLV2221Y Accelerometers
    Text: TLV2221, TLV2221Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS SLOS157A JUNE1996 – REVISED JANUARY 1997 D D D D D D D D DBV PACKAGE TOP VIEW Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz


    Original
    PDF TLV2221, TLV2221Y SLOS157A JUNE1996 TLV2221 amplifiers discontinued in 1996 transistor 1012 2/88 TLV2211 TLV2221CDBV TLV2221IDBV TLV2221Y Accelerometers

    TLV2221IDBV

    Abstract: 10(6) 250 50e3 transistor 1012 2/88 TLV2211 TLV2221 TLV2221CDBV TLV2221Y
    Text: TLV2221, TLV2221Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS SLOS157 JUNE1996 D D D D D D D D DBV PACKAGE TOP VIEW Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz Low Input Bias Current . . . 1 pA Typ


    Original
    PDF TLV2221, TLV2221Y SLOS157 JUNE1996 TLV2221 TLV2221IDBV 10(6) 250 50e3 transistor 1012 2/88 TLV2211 TLV2221CDBV TLV2221Y

    Untitled

    Abstract: No abstract text available
    Text: TLV2221, TLV2221Y Advanced LinCMOS RAILĆTOĆRAIL VERY LOWĆPOWER SINGLE OPERATIONAL AMPLIFIERS SLOS157B JUNE1996 − REVISED APRIL 2005 D D D D D D D D DBV PACKAGE TOP VIEW Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz


    Original
    PDF TLV2221, TLV2221Y SLOS157B JUNE1996 TLV2221 OT-23 TLV2231

    MB811

    Abstract: No abstract text available
    Text: June1996 Revision 1.0 DATA SHEET FSA4UN364 2/4 -(60/70)J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)-(60/70)J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. DM4M4N360 supports 4K refresh. DM4M2N360


    Original
    PDF June1996 FSA4UN364 16MByte 16-megabyte 36bits, 72-pin, DM4M4N360 DM4M2N360 MB811

    Untitled

    Abstract: No abstract text available
    Text: TLV2221, TLV2221Y Advanced LinCMOS RAILĆTOĆRAIL VERY LOWĆPOWER SINGLE OPERATIONAL AMPLIFIERS SLOS157B JUNE1996 − REVISED APRIL 2005 D D D D D D D D DBV PACKAGE TOP VIEW Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz


    Original
    PDF TLV2221, TLV2221Y SLOS157B JUNE1996 TLV2221 OT-23 TLV2231

    Untitled

    Abstract: No abstract text available
    Text: TLV2221, TLV2221Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS SLOS157A JUNE1996 – REVISED JANUARY 1997 D D D D D D D D DBV PACKAGE TOP VIEW Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz


    Original
    PDF TLV2221, TLV2221Y SLOS157A JUNE1996 TLV2221 SLOA039A SLOU060, SLOU061, SLVU006A, SLOU055,

    NDC632P

    Abstract: No abstract text available
    Text: June1996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -2.7A, -20V. RDS ON = 0.14Ω @ VGS = -4.5V RDS(ON) = 0.2Ω @ VGS = -2.7V. These P-Channel logic level enhancement mode power field effect transistors are produced using


    Original
    PDF June1996 NDC632P NDC632P

    Untitled

    Abstract: No abstract text available
    Text: TLV2221, TLV2221Y Advanced LinCMOS RAILĆTOĆRAIL VERY LOWĆPOWER SINGLE OPERATIONAL AMPLIFIERS SLOS157B JUNE1996 − REVISED APRIL 2005 D D D D D D D D DBV PACKAGE TOP VIEW Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz


    Original
    PDF TLV2221, TLV2221Y SLOS157B JUNE1996 TLV2221 OT-23 TLV2231

    TLV2211

    Abstract: TLV2221 TLV2221CDBV TLV2221IDBV TLV2221Y TLV2231
    Text: TLV2221, TLV2221Y Advanced LinCMOS RAILĆTOĆRAIL VERY LOWĆPOWER SINGLE OPERATIONAL AMPLIFIERS SLOS157B JUNE1996 − REVISED APRIL 2005 D D D D D D D D DBV PACKAGE TOP VIEW Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz


    Original
    PDF TLV2221, TLV2221Y SLOS157B JUNE1996 TLV2221 OT-23 TLV2211 TLV2221CDBV TLV2221IDBV TLV2221Y TLV2231

    CBVK741B019

    Abstract: F63TNR FDC633N NDC632P RCA 014
    Text: June1996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -2.7A, -20V. RDS ON = 0.14Ω @ VGS = -4.5V RDS(ON) = 0.2Ω @ VGS = -2.7V. These P-Channel logic level enhancement mode power field effect transistors are produced using


    Original
    PDF June1996 NDC632P CBVK741B019 F63TNR FDC633N NDC632P RCA 014

    TLV2211

    Abstract: TLV2221 TLV2221CDBV TLV2221IDBV TLV2221Y TLV2231
    Text: TLV2221, TLV2221Y Advanced LinCMOS RAILĆTOĆRAIL VERY LOWĆPOWER SINGLE OPERATIONAL AMPLIFIERS SLOS157B JUNE1996 − REVISED APRIL 2005 D D D D D D D D DBV PACKAGE TOP VIEW Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz


    Original
    PDF TLV2221, TLV2221Y SLOS157B JUNE1996 TLV2221 OT-23 TLV2211 TLV2221CDBV TLV2221IDBV TLV2221Y TLV2231

    NDC632P

    Abstract: No abstract text available
    Text: N June1996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is


    Original
    PDF June1996 NDC632P NDC632P

    Untitled

    Abstract: No abstract text available
    Text: TLV2221, TLV2221Y Advanced LinCMOS RAILĆTOĆRAIL VERY LOWĆPOWER SINGLE OPERATIONAL AMPLIFIERS SLOS157B JUNE1996 − REVISED APRIL 2005 D D D D D D D D DBV PACKAGE TOP VIEW Output Swing Includes Both Supply Rails Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz


    Original
    PDF TLV2221, TLV2221Y SLOS157B JUNE1996 TLV2221 OT-23 TLV2231

    OP123

    Abstract: OP900 OP900SL photodiode PN
    Text: OPTEK Product Bulletin OP900SL June1996 PN Junction Silicon Photodiode Type OP900SL Features • • • • • Narrow receiving angle Enhanced temperature range Ideal for direct mounting in PC boards Fast switching speed Mechanically and spectrally matched


    OCR Scan
    PDF OP900SL OP123 OP900 photodiode PN

    piezoelectric sensors by texas instrument

    Abstract: t54 sot-23 TLV2221 TLV2221CDBV TLV2221IDBV TLV2221Y
    Text: TLV2221, TLV2221Y Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS SLOS157 - JUNE1996 • Output Swing Includes Both Supply Rails • • • Low Noise . . . 19 nV/VHz Typ at f = 1 kHz Low Input Bias Current. . . 1 pA Typ DBV PACKAGE


    OCR Scan
    PDF TLV2221, TLV2221Y SLOS157 JUNE1996 TLV2221 TLV2221Y SLOS157-JUNE 4073253-3/A fl1bl724 piezoelectric sensors by texas instrument t54 sot-23 TLV2221CDBV TLV2221IDBV

    HI1106

    Abstract: No abstract text available
    Text: 2 m a r !? H I 1 1 0 6 , C X A 1 1 0 6 8-Bit 35 MSPS June1996 High-Speed D/A Converter TTL Input) Features Description • R eso lu tio n . 8-Bit The HI1106, C X A 1 106 is an 8-bit 35 M S P S high-speed D/A


    OCR Scan
    PDF e1996 HI1106, 1-800-4-H 00bb77T HI1106

    P6030L

    Abstract: 52A zener
    Text: g ^ IR Ç H I^ M IC D N D U C T Q R June1996 tm NDP6030L / NDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's


    OCR Scan
    PDF June1996 NDP6030L NDB6030L P6030L 52A zener

    Untitled

    Abstract: No abstract text available
    Text: June1996 Revision 1.0 FUJITSU DATA S H E E T FSA4UN364 2/4 -(60/70)J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)-(60/70)J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. DM4M4N360 supports 4K refresh. DM4M2N360


    OCR Scan
    PDF June1996 FSA4UN364 16MByte 16-megabyte 36bits, 72-pin, DM4M4N360 DM4M2N360 MB811