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    IXTP2N95 Search Results

    IXTP2N95 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTP2N95 IXYS High Voltage Power MOSFETs Scan PDF
    IXTP2N95 IXYS High Voltage Power MOSFETs Scan PDF
    IXTP2N95 Sharp 950 V, 2 A, sourse-drain diode Scan PDF
    IXTP2N95A IXYS High Voltage Power MOSFETs Scan PDF
    IXTP2N95A IXYS High Voltage Power MOSFETs Scan PDF

    IXTP2N95 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJ1005

    Abstract: MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007
    Text: STI Type: IXTM3N100A Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 7.0 Trans Conductance Mhos: 1.5 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:


    Original
    PDF IXTM3N100A O-204AA/TO-3 IXTM3N70A IXTM3N70 O-204AA/TO-3: MJ13081 MJ13091 MJ1005 MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007

    IXTP4N50A

    Abstract: IXTP4N90A IXTH12N45A IXTP3N80A IXTP3N90A IXTH15N45A IRFP460 IXTP2N100
    Text: 4686226 03E 00 14 3 I X Y S CORP □3 I X Y S CO RP D T' D Ë J 4böt,52b 0 Q D 0 1 4 3 T |~~ N-Channel MOSFETs Part Number IXTP4N100A IXTP4N100 IXTP2N100A IXTP2N100 IXTP4N95A IXTP4N95 IXTP2N95A IXTP2N95 IXTP4N90A IXTP4N90 IXTP3N90A IXTP3N90 IXTP4N80A IXTP4N80


    OCR Scan
    PDF IXTP4N100A IXTP4N100 IXTP2N100A IXTP2N100 IXTP4N95A IXTP4N95 IXTP2N95A IXTP2N95 IXTP4N90A IXTP4N90 IXTP4N50A IXTH12N45A IXTP3N80A IXTP3N90A IXTH15N45A IRFP460

    2N95A

    Abstract: 2N95 2N100 IXTM2N100 IXTM2N95 IXTP2N100 IXTP2N95
    Text: 1ÖE D I X Y S CORP • 4böb22b QOOGLOS T ■ IXTP2N95, IXTP2N100, IXTM2N95, IXTM2N100 □ IX Y S 2 A M PS, 950-1000 V, 6.0Q/7.0Q T V £ °l-ll MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Drain-Gate Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous


    OCR Scan
    PDF IXTP2N95, IXTP2N100, IXTM2N95, IXTM2N100 IXTP2N95 IXTM2N95 IXTP2N100 1XTM2N100 O-220 300/js, 2N95A 2N95 2N100 IXTM2N95

    ZO 109 wa

    Abstract: ixtm2N100 PN channel MOSFET 10A ixtm2N95
    Text: 1ÖE I X Y S CORP D • 4böb22b QOOGLOS T ■ IXTP2N95, IXTP2N100, IXTM2N95, IXTM2N100 □ IX Y S 2 AM PS, 950-1000 V, 6.0Q/7.0Q T V £ °l-ll MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Drain-Gate Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous


    OCR Scan
    PDF IXTP2N95, IXTP2N100, IXTM2N95, IXTM2N100 IXTP2N95 IXTM2N95 IXTP2N100 CHA420 O-204 ZO 109 wa PN channel MOSFET 10A ixtm2N95

    IRF250

    Abstract: IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95
    Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­


    OCR Scan
    PDF 00V/12A IRF250 IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95

    IXTH13P20

    Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460
    Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­


    OCR Scan
    PDF