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    IXTP1N120P Search Results

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    IXTP1N120P Price and Stock

    Littelfuse Inc IXTP1N120P

    MOSFET N-CH 1200V 1A TO220AB
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    DigiKey IXTP1N120P Tube 300
    • 1 -
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    • 100 -
    • 1000 $2.2732
    • 10000 $2.2732
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    Newark IXTP1N120P Bulk 300
    • 1 -
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    • 100 $3.18
    • 1000 $2.56
    • 10000 $2.38
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    IXYS Corporation IXTP1N120P

    MOSFETs 1 Amps 1200V 20 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTP1N120P 1,718
    • 1 $4.77
    • 10 $4.01
    • 100 $3.25
    • 1000 $2.47
    • 10000 $2.26
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    Future Electronics IXTP1N120P Tube 300
    • 1 -
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    • 100 $2.34
    • 1000 $2.26
    • 10000 $2.23
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    TTI IXTP1N120P Tube 300
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    • 100 -
    • 1000 $2.28
    • 10000 $2.23
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    TME IXTP1N120P 1
    • 1 $3.82
    • 10 $3.03
    • 100 $2.73
    • 1000 $2.73
    • 10000 $2.73
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    New Advantage Corporation IXTP1N120P 300 1
    • 1 -
    • 10 -
    • 100 $5.02
    • 1000 $4.69
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    IXTP1N120P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTP1N120P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 1A TO-220 Original PDF

    IXTP1N120P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXTA1N120P

    Abstract: No abstract text available
    Text: PolarTM Power MOSFETs VDSS ID25 IXTY1N120P IXTA1N120P IXTP1N120P RDS on = 1200V = 1A Ω ≤ 20Ω TO-252 (IXTY) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXTY1N120P IXTA1N120P IXTP1N120P O-252 O-263 1N120P 1-08-A IXTA1N120P PDF

    2a245

    Abstract: IXTP1N120P IXTA1N120P
    Text: PolarTM Power MOSFET IXTA1N120P IXTP1N120P VDSS ID25 RDS on = 1200V = 1A ≤ 20Ω Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200


    Original     		IXTA1N120P IXTP1N120P O-263 500mA 1N120P A-245) 4-01-08-A 2a245 IXTP1N120P IXTA1N120P PDF

    2a245

    Abstract: IXTP1N120P 1N120P IXTA1N120P
    Text: Polar VHVTM Power MOSFET IXTA1N120P IXTP1N120P VDSS ID25 RDS on = 1200V = 1.0A ≤ Ω 20Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTA1N120P IXTP1N120P O-263 1N120P A-245 2a245 IXTP1N120P IXTA1N120P PDF

    IXTY1N120P

    Abstract: IXTA1N120P
    Text: IXTY1N120P IXTA1N120P IXTP1N120P PolarTM Power MOSFETs VDSS ID25 RDS on = 1200V = 1A Ω ≤ 20Ω TO-252 (IXTY) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXTY1N120P IXTA1N120P IXTP1N120P O-252 O-263 O-220) O-252 O-220 1N120P PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF