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IXTP180N10T Price and Stock

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Littelfuse Inc IXTP180N10T MOSFET N-CH 100V 180A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTP180N10T	Tube	3,030		1	1 $5.35 10 $5.35 100 $3.3128 1000 $3.3128 10000 $3.3128	Buy Now
IXYS Corporation IXTP180N10T MOSFETs MOSFET Id180 BVdass100
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTP180N10T		308			1 $6.69 10 $5.12 100 $4.07 1000 $3.43 10000 $3.43	Buy Now
Newark	IXTP180N10T	Bulk			1	1 $5.56 10 $5.48 100 $3.8 1000 $3.8 10000 $3.8	Buy Now
Future Electronics	IXTP180N10T	Tube			300	1 - 10 - 100 $3.4 1000 $3.25 10000 $3.25	Buy Now
TME	IXTP180N10T				1	1 $5.57 10 $4.99 100 $3.96 1000 $3.69 10000 $3.69	Get Quote
Chip 1 Exchange	IXTP180N10T		24,914			1 - 10 - 100 - 1000 - 10000 -	Get Quote

New Advantage Corporation	IXTP180N10T		15,365		1	1 - 10 - 100 $4.81 1000 $4.81 10000 $4.81	Buy Now

IXTP180N10T Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTP180N10T		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 180A TO-220		Original	PDF

IXTP180N10T Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
ixtp180n10t Abstract: IXTA180N10T IXTP*80N10T Text: Preliminary Technical Information IXTA180N10T IXTP180N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100	Original	IXTA180N10T IXTP180N10T O-263 O-220) O-263 O-220 180N10T ixtp180n10t IXTP*80N10T	PDF
IXTA180n10t Abstract: IXTP*80N10T IXTA180N10 ixtp180n10t 180N10T T180N Text: IXTA180N10T IXTP180N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 100V = 180A Ω ≤ 6.4mΩ TO-263 (IXTA) G Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 100 100 V V VGSM	Original	IXTA180N10T IXTP180N10T O-263 062in. 180N10T 2-02-07-B IXTA180n10t IXTP*80N10T IXTA180N10 ixtp180n10t T180N	PDF
Untitled Abstract: No abstract text available Text: TrenchMVTM Power MOSFET IXTA180N10T IXTP180N10T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 100V = 180A Ω ≤ 6.4mΩ TO-263 (IXTA) G Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 100 100 V V VGSM	Original	IXTA180N10T IXTP180N10T O-263 062in. 180N10T 2-02-07-B	PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS	PDF
1262-33 Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T Text: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.	Original	5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T	PDF