IXTH15N70 Search Results

IXTH15N70 Datasheets (3)

Part	Manufacturer	Description	Datasheet Type	PDF
IXTH15N70	InterFET	N-Channel Enhancement Mode	Original	PDF
IXTH15N70	Unknown	FET Data Book	Scan	PDF
IXTH15N70A	Unknown	FET Data Book	Scan	PDF

IXTH15N70 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IXFH15N100 Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80 Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP	Original	IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80	PDF
Untitled Abstract: No abstract text available Text: IXTH15N70 MegaMOS FET V DSS com ^ D S (o n ) = 700 V = = 15 A Û N-Channel Enhancement Mode Symbol Test Conditions VDSS Tj = 2 5 ° C to 1 5 0 “C 700 V Tj = 25°C to 150°C; RGS= 1 MQ 700 V V=s Continuous ±20 V VGSM Transient ±30 V Maximum Ratings	OCR Scan	IXTH15N70 O-247	PDF
1xys Abstract: IXTH50N10 IXTH20n60 to-247 IXTH25N50 HP 3800 IXTH12N50A IXTH25N45 IXTH12N50 IXTH25N50A IXTH15N80 Text: 268 f ï m € tt ft * Vds £ fé Vg s 11 13=25=0 Id less Pd Id s s Vgs th j * /CH Vd g (V) ( T a = 2 5 cC ) g fs Io(on) Ciss Coss Crss (typ) (typ) (typ) (max) (max) (max) Vd s (pF) (pF) (pF) (V) V g s =0 Vgs min /CH Vgs % '14 & F Ds(on) Vd s = or €	OCR Scan	IXTH12N50 O-247 IXTH12N50A IXTH15N70 UTH15N70A O-204 IKTM3N80A IXTM3N90 1xys IXTH50N10 IXTH20n60 to-247 IXTH25N50 HP 3800 IXTH25N45 IXTH25N50A IXTH15N80	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

IXFH15N100

Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP

Original

IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80

PDF

Untitled

Abstract: No abstract text available
Text: IXTH15N70 MegaMOS FET V DSS com ^ D S (o n ) = 700 V = = 15 A Û N-Channel Enhancement Mode Symbol Test Conditions VDSS Tj = 2 5 ° C to 1 5 0 “C 700 V Tj = 25°C to 150°C; RGS= 1 MQ 700 V V=s Continuous ±20 V VGSM Transient ±30 V Maximum Ratings

OCR Scan

IXTH15N70 O-247

PDF

1xys

Abstract: IXTH50N10 IXTH20n60 to-247 IXTH25N50 HP 3800 IXTH12N50A IXTH25N45 IXTH12N50 IXTH25N50A IXTH15N80
Text: 268 f ï m € tt ft * Vds £ fé Vg s 11 13=25=0 Id less Pd Id s s Vgs th j * /CH Vd g (V) ( T a = 2 5 cC ) g fs Io(on) Ciss Coss Crss (*typ) (*typ) (*typ) (max) (max) (max) Vd s (pF) (pF) (pF) (V) V g s =0 Vgs min * /CH Vgs % '14 & F Ds(on) Vd s = or €