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    Abstract: No abstract text available
    Text: O IX Y S PRELIMINARY DATA SHEET IXGH28N30B IXGH28N30BS HiPerFAST IGBT vCES ^C25 vCE sat typ *fl(typ) Symbol Test Conditions V CES T j = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MO 300 V v GES Continuous ±20 V VœM Transient ±30 V Tc = 25° C


    OCR Scan     		PDF IXGH28N30B IXGH28N30BS O-247 28N30BS)

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    Abstract: SMD ajw
    Text: □ IXYS PRELIM INA RY DATA SHEET IXGH28N30B IXGH28N30BS HiPerFAST IGBT Symbol Test Conditions V CES Td = 25°C to 150°C V CGR « Maximum Ratings 300 V Td = 25°C to 150°C; RGE = 1 M£i 300 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C


    OCR Scan     		PDF IXGH28N30B IXGH28N30BS 13/10Nm/lb O-247 AJW SMD SMD ajw