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    IXGA16N60C2 Price and Stock

    IXYS Corporation IXGA16N60C2D1

    IGBT PT 600V 40A TO-263AA
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    IXGA16N60C2 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGA16N60C2 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 40A 150W TO263 Original PDF
    IXGA16N60C2 IXYS TRANS IGBT CHIP N-CH 600V 40A 3TO-263 Original PDF
    IXGA16N60C2D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 40A 150W TO263 Original PDF
    IXGA16N60C2D1 IXYS TRANS IGBT CHIP N-CH 600V 40A 3TO-263 Original PDF
    IXGA16N60C2D1SN IXYS TRANS IGBT CHIP N-CH 600V 40A 3TO-263 Original PDF
    IXGA16N60C2SN IXYS TRANS IGBT CHIP N-CH 600V 40A 3TO-263 Original PDF

    IXGA16N60C2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    16N60C3

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBTs C2-Class High Speed VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60C2 IXGP16N60C2 600V 16A 3.0V 33ns TO-263 AA (IXGA) G Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES


    Original     		IC110 IXGA16N60C2 IXGP16N60C2 O-263 O-220) 16N60C3D1 16N60C3 PDF

    IXGA16N60C2

    Abstract: IXGP16N60C2
    Text: Preliminary Technical Information VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60C2 IXGP16N60C2 HiPerFASTTM IGBTs C2-Class High Speed 600V 16A 3.0V 35ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IC110 IXGA16N60C2 IXGP16N60C2 O-263 338B2 IXGA16N60C2 IXGP16N60C2 PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBTs C2-Class High Speed w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 600V 16A 3.0V 33ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IC110 IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 O-263 IF110 16N60C3D1 PDF

    IXGH16N60C2D1

    Abstract: IXGP16N60C2D1 16N60C3 IF110 IXGA16N60C2D1
    Text: HiPerFASTTM IGBTs C2-Class High Speed w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 600V 16A 3.0V 33ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IC110 IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 O-263 IF110 16N60C3D1 IXGH16N60C2D1 IXGP16N60C2D1 16N60C3 IF110 IXGA16N60C2D1 PDF

    IF110

    Abstract: IXGA16N60C2D1 IXGH16N60C2D1 IXGP16N60C2D1
    Text: Preliminary Technical Information VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 HiPerFASTTM IGBTs C2-Class High Speed w/ Diode 600V 16A 3.0V 35ns TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C


    Original     		IC110 IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 O-263 IF110 O-220 O-247 IF110 IXGA16N60C2D1 IXGH16N60C2D1 IXGP16N60C2D1 PDF

    IXGA16N60C2

    Abstract: IXGP16N60C2 16N60C3
    Text: HiPerFASTTM IGBTs C2-Class High Speed VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60C2 IXGP16N60C2 600V 16A 3.0V 33ns TO-263 AA (IXGA) G Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES


    Original     		IC110 IXGA16N60C2 IXGP16N60C2 O-263 O-220) O-263 16N60C3D1 IXGA16N60C2 IXGP16N60C2 16N60C3 PDF