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    IXYS Corporation IXFX80N60P3

    MOSFETs 600V 80A 0.07Ohm PolarP3 Power MOSFET
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    Mouser Electronics IXFX80N60P3 300
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    Future Electronics IXFX80N60P3 Tube 26 Weeks 30
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    TTI IXFX80N60P3 Tube 300
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    TME IXFX80N60P3 1
    • 1 $17.5
    • 10 $15.56
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    New Advantage Corporation IXFX80N60P3 34 1
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    Littelfuse Inc IXFX80N60P3

    Discmsft Nchhiperfet-Polar3 To-247Ad/ Tube |Littelfuse IXFX80N60P3
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    Newark IXFX80N60P3 Bulk 300
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    IXFX80N60P3 Datasheets (1)

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    IXFX80N60P3 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 80A PLUS247 Original PDF

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    Siemens DIODE E 1240

    Abstract: IXFK80N60P3 IXFX80N60P3
    Text: Advance Technical Information IXFK80N60P3 IXFX80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 TO-264 IXFK Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 600 600 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V


    Original     		IXFK80N60P3 IXFX80N60P3 O-264 250ns PLUS247 80N60P3 Siemens DIODE E 1240 IXFX80N60P3 PDF

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    Abstract: No abstract text available
    Text: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET VDSS ID25 IXFK80N60P3 IXFX80N60P3 = = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		IXFK80N60P3 IXFX80N60P3 250ns O-264 80N60P3 PDF

    IXFK80N60P3

    Abstract: 80n60
    Text: IXFK80N60P3 IXFX80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 = = 600V 80A  77m 250ns RDS on   trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M


    Original     		IXFK80N60P3 IXFX80N60P3 250ns O-264 80N60P3 IXFK80N60P3 80n60 PDF