Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXFN300N10P Search Results

    SF Impression Pixel

    IXFN300N10P Price and Stock

    IXYS Corporation IXFN300N10P

    MOSFET Modules Polar Power MOSFET HiPerFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFN300N10P 2,095
    • 1 $41.79
    • 10 $32.38
    • 100 $32.38
    • 1000 $32.38
    • 10000 $32.38
    Buy Now
    Future Electronics IXFN300N10P Tube 300
    • 1 -
    • 10 $32.62
    • 100 $32.15
    • 1000 $31.74
    • 10000 $31.74
    Buy Now
    TME IXFN300N10P 1
    • 1 $48.81
    • 10 $38.8
    • 100 $38.8
    • 1000 $38.8
    • 10000 $38.8
    Get Quote

    Littelfuse Inc IXFN300N10P

    Discmsft N-Ch Hiperfet-Polasot-227B(Mini/ Tube |Littelfuse IXFN300N10P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXFN300N10P Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $33.94
    • 10000 $33.94
    Buy Now
    RS IXFN300N10P Bulk 8 Weeks 10
    • 1 -
    • 10 $50.09
    • 100 $50.09
    • 1000 $50.09
    • 10000 $50.09
    Get Quote

    IXFN300N10P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFN300N10P IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH SOT-227 Original PDF

    IXFN300N10P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXFN300N10P

    Abstract: 300N10P
    Text: Preliminary Technical Information IXFN300N10P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original
    IXFN300N10P 100ms 300N10P IXFN300N10P PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFN300N10P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original
    IXFN300N10P 100ms 300N10P PDF

    Untitled

    Abstract: No abstract text available
    Text: IXFN300N10P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25C to 175C 100 V VDGR TJ = 25C to 175C, RGS = 1M 100 V VGSS Continuous 20


    Original
    IXFN300N10P 100ms 300N10P PDF