SA52 DT 90
Abstract: No abstract text available
Text: ISSI IS75V16F96GS32 3.0 Volt Multi-Chip Package MCP — 96 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo SRAM MCP FEATURES • Power supply voltage 2.7V to 3.3V • High performance: Flash: 70ns maximum access time PSRAM: 65ns maximum access time
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Original
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PDF
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IS75V16F96GS32
107-ball
-300C
-30oC
IS75V16F96GS08-7065BI
SA52 DT 90
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PSRAM
Abstract: Flash Memory 32Mbit
Text: ISSI IS75V16F96GS32 3.0 Volt Multi-Chip Package MCP — 96 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo SRAM TARGET INFORMATION OCTOBER 2002 MCP FEATURES • Erase Algorithms: • Power supply voltage 2.7V to 3.1V • High performance:
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Original
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PDF
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IS75V16F96GS32
107-ball
-25oC
IS75V16F96GS08-7065BI
PSRAM
Flash Memory 32Mbit
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VCCF1
Abstract: 64 MBIT SERIAL FLASH MEMORY ISSI 850C A0-A21
Text: ISSI IS75V16F96GS32 3.0 Volt Multi-Chip Package MCP — 96 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo SRAM MCP FEATURES • Power supply voltage 2.7V to 3.3V • High performance: Flash: 70ns maximum access time PSRAM: 65ns maximum access time
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Original
|
PDF
|
IS75V16F96GS32
107-ball
-300C
-30oC
IS75V16F96GS32-7065BI
VCCF1
64 MBIT SERIAL FLASH MEMORY ISSI
850C
A0-A21
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mcp 107-ball 13
Abstract: No abstract text available
Text: ISSI IS75V16F96GS32 3.0 Volt Multi-Chip Package MCP — 96 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo SRAM MCP FEATURES • Power supply voltage 2.7V to 3.1V • High performance: Flash: 70ns maximum access time PSRAM: 65ns maximum access time
|
Original
|
PDF
|
IS75V16F96GS32
107-ball
-25oC
IS75V16F96GS08-7065BI
mcp 107-ball 13
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