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    Integrated Silicon Solution Inc IS28LV020-90T

    256K X 8 FLASH 12V PROM, 90 ns, PDSO32
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    IS28LV020 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IS28LV020-12W Integrated Silicon Solution 262,144 x 8 CMOS FLASH MEMORY Original PDF
    IS28LV020-90PL Integrated Silicon Solution 262,144 x 8 CMOS FLASH MEMORY Original PDF
    IS28LV020-90T Integrated Silicon Solution 262,144 x 8 CMOS FLASH MEMORY Original PDF
    IS28LV020-90W Integrated Silicon Solution 262,144 x 8 CMOS FLASH MEMORY Original PDF

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    fl001

    Abstract: IS28F020 IS28LV020-90PL IS28LV020-90T IS28LV020-90W IS28LV020-12PL
    Text: ISSI IS28LV020 ISSI IS28LV020 262,144 x 8 CMOS FLASH MEMORY ® ADVANCE INFORMATION APRIL 1997 FEATURES • Flash electrical bulk chip-erase - One second typical chip-erase • Fast-pulse programming algorithm - 10 µs typical byte-program - 4 second chip-program


    Original
    PDF IS28LV020 FL001-0A IS28LV020-90W IS28LV020-90PL IS28LV020-90T 600-mil IS28LV020-12W IS28LV020-12PL fl001 IS28F020 IS28LV020-90PL IS28LV020-90T IS28LV020-90W IS28LV020-12PL

    Untitled

    Abstract: No abstract text available
    Text: IS28LV020 262,144 X 8 CMOS FLASH MEMORY ADVANCE INFORMATION APRIL 1997 FEATURES • High performance - Power supply voltage 3V ± 10% - 90 ns, 120 ns maximum access time • CMOS low power consumption - 30 mA maximum active current - 100 |jA maximum standby current


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    PDF IS28LV020 32-pin FL001-0A IS28LV020-90W IS28LV020-90PL IS28LV020-90T IS28LV020-12W

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS28LV020 262,144 X 1 8 CMOS FLASH MEMORY ADVANCE INFORMATION APRIL 1997 FEATURES • High perform ance - Pow er supply voltage 3 V ± 10% - 90 ns, 120 ns m axim um access time • C M O S low pow er consumption - 30 mA m axim um active current - 1 0 0 nA m axim um standby current


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    PDF IS28LV020 32-pin PK13197T32 0000Sb4