pseudomorphic HEMT
Abstract: CFA0103 CFA0103L CFA0103-L
Text: Low Noise GaAs FETs CFA0103 July 2006 - Rev 31-Jul-06 Features High Gain Super Low Noise Pseudomorphic HEMT 70 Mil Hermetic Package Applications Satellite Receivers Point-to-Point Radio Receivers Commercial Communications Defense Electronics General Description
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CFA0103
31-Jul-06
CFA0103-L
pseudomorphic HEMT
CFA0103
CFA0103L
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TA4003F
Abstract: No abstract text available
Text: TOSHIBA TA4003F Bipolar Linear Integrated Circuit U nit in m m VHF ~ UHF Wide Band Amplifier F eatu res • Band W idth 1,5CHz typ. .(3dB down, Vc c = 2V) • High Gain: IS2112 = 11 dB (typ.), f = 500M Hz, Vc c = 2V) • Operating Supply Voltage : Vc c = 2 ~ 3V
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TA4003F
IS2112
TA4003F
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Untitled
Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors TA4003F Bipolar Linear Integrated Circuit Unit in mm VHF ~ UHF Wide Band Amplifier Features • Band Width 1,5CHz typ. .(3dB down, Vcc = 2V) • High Gain: IS2112 = 11 dB (typ.), f = 500MHz, Vc c = 2V) • Operating Supply Voltage : Vcc = 2 ~ 3V
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TA4003F
IS2112
500MHz,
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F=1.45dB at 900MHz SOT-23 RFs Q62702-F1314 1= B 2=E o Package BFR 181 II CO ESP: Electrostatic discharge sensitive device, observe handling precaution!
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900MHz
Q62702-F1314
OT-23
BFR181
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Untitled
Abstract: No abstract text available
Text: What H E W L E T T mLnM P a c k a r d Low N oise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-02184 INA-02186 F eatures • Cascadable 50 Q Gain Block • Low N oise Figure: 2.0 dB Typical at 0.5 GHz • High Gain: 31 dB Typical at 0.5 GHz
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INA-02184
INA-02186
INA-02184
INA-02186
5965-9675E
4447SA4
01fl35c
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MMIC A06
Abstract: No abstract text available
Text: mL'EM P A C K A R D Thp\ HEW LETT- Cascadable Silicon Bipolar MMIC Amplifiers Technical Data MSA-0700 Features • Cascadable 50 Q Gain Block • Low Operating Voltage: 4.0 V Typical Vd • 3 dB Bandwidth: DC to 2.5 GHz • 13.0 dB Typical Gain at 1.0 GHz
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MSA-0700
MSA-0700
5965-9589E
MMIC A06
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Untitled
Abstract: No abstract text available
Text: Who mifíM1 HEWLETT PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0185 Features • Cascadable 50 Q. Gain Block • 3 dB Bandwidth: DC to 1.0 GHz • High Gain: 17.5 dB Typical at 0.5 GHz • Unconditionally Stable k > l • Low Cost Plastic Package
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MSA-0185
MSA-0185
5965-9693E
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Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
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2PHX11136Q-17
Motorola transistors MRF 947
trimpots 3296
transistor C5386
1n4740
2N5591 Motorola
2N5688
CQ 542 Transistor npn motorola
equivalent transistor of 2sc3358
HB215/D
ic cd 2399 gp
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MRF942
Abstract: NF50
Text: Order this data sheet by MRF942/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF942 The RF Line NPN Silicon Low Noise, High-Frequency Transistor IC = 40 mA LOW NOISE HIGH FREQUENCY TRANSISTOR . . designed for use in high gain, low noise small-signal amplifiers. This device features
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MRF942/D
MRF942
C68593
MRF942
NF50
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Untitled
Abstract: No abstract text available
Text: MA4TD0900 M/A-COM AIÂCGM Silicon Bipolar MMIC Cascadable Amplifier Chip Outline Drawing Features • • • • • M R F & Microwave Products Cascadable 5Oil Gain Block 3dB Bandwidth: DC to 4.5 GHz 8.0 dB Typical Gain @ 1.0 GHz Low SWR: <1.5 from 0.1 to 3.0 GHz
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MA4TD0900
A4TD0900
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Untitled
Abstract: No abstract text available
Text: m H EW LE TT MSA-0886 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Am plifiers PACKARD Features 86 Plastic Package • Usable Gain to 5.5 GHz • High Gain: 32.5 dB typical at 0.1 GHz 22.5 dB typical at 1.0 GHz • Low Noise Figure: 3.3 dB typical at 1.0 GHz
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MSA-0886
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Untitled
Abstract: No abstract text available
Text: m HEWLETT PA CK A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-1105 Features Description • High Dynamic Range Cascadable 50 £2 or 75 Q Gain Block • 3 IB Bandwidth: The MSA-1105 is a high perfor mance silicon bipolar Monolithic
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MSA-1105
MSA-1105
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SA2111
Abstract: No abstract text available
Text: m H EW LETT PACKARD M SA-2111 M O D A M P C a s c a d a b le S ilic o n B ip o la r M o n o lith ic M ic ro w a v e Integrated C irc u it A m p lifie r s SOT-143 Package Features • • • • • • Cascadable 50 £2 Gain Block Medium Power: 10 dBm at 900 MHz
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SA-2111
OT-143
SA2111
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SIEMENS thyristor
Abstract: transistor smd AFE smd transistor G9
Text: SIEMENS 1 Technical Information Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components - in contrast to integrated circuits, multiples of these components and semiconductor chips. The number of the basic type consists of: two letters and a three-digit code.
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Untitled
Abstract: No abstract text available
Text: MA4TD0800 M/A-COM Silicon Bipolar MMIC Cascadable Amplifier Chip Outline Drawing Features • • • • AMIÂ C GM RF&M icrowaveProducts 1, 2 , 3 , 4 Cascadable 5Oil Gain Block High Gain: 32.5 dB Typical Gain @ 0.1 GHz 18.5 dB Typical Gain @ 1.0 GHz Low Noise Figure: 3.2 dB Typical @ 1.0 GHz
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MA4TD0800
A4TD0800
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Untitled
Abstract: No abstract text available
Text: Who1 HEW LETT wLfiM PA C K A R D Cascadable Silicon Bipolar MMIC Amplifiers Technical Data MSA-0435, -0436 Features designed for use as a general purpose 50 Q gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applica
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MSA-0435,
MSA-0435
44475A4
5965-9575E
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Untitled
Abstract: No abstract text available
Text: Thal 1 "UM HEWLETT PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data M SA-1100 F eatures combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in industrial and military systems. • High Dynamic Range
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SA-1100
5965-9555E
0Qlflb55
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sot 223 marking code jb
Abstract: pj 939 pj 936 R/diode pj 936
Text: Whpl H E W L E T T mLìiM P A C K A R D Silicon Bipolar Monolithic Amplifiers HPMA-0600 HPMA-0611 HPMA-0635 HPMA-0685 HPMA-0686 Technical Data Features HPMA-0600 • 3 dB B andw idth: DC to 1.0 GHz • 19.9 dB G ain Typical at 0.5 GHz • Low Noise F igure: 2.7 dB
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HPMA-0600
HPMA-0611
HPMA-0635
HPMA-0685
HPMA-0686
HPMA-0600
HPMA-0635
HPMA-0686
5091-1546E
sot 223 marking code jb
pj 939
pj 936
R/diode pj 936
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Untitled
Abstract: No abstract text available
Text: Whnl HEW LETT mL'HM PA C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0285 Features • Cascadable 50 £2 Gain Block • 3 dB Bandwidth: DC to 2.6 GHz • 12.0 dB Typical Gain at 1.0 GHz • Unconditionally Stable k>l • Low C ost Plastic Package
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MSA-0285
MSA-0285
5965-9563E
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Untitled
Abstract: No abstract text available
Text: HEWLETT-PACKARD/ CMPNTS blE D WkTM HEW LETT mHEM P A C K A R D 4 4 4 7 5 A 4 D D 1 0 D 1 3 3ET • H P A MagIC Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Chip Outline1 Features • • • • • ■ INA-01100 Cascadable 50 Q Gain Block Low Noise Figure: 1.7 dB typical at 100 MHz
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INA-01100
INA-01100
fabricat-12
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AN-A006
Abstract: No abstract text available
Text: W hot HEWLETT mLEM PA C K A R D 3.0 GHz Wideband Silicon RFIC Amplifier Technical Data INA-32063 Features • 17 dB Gain at 1.9 GHz Surface Mount SOT-363 SC-70 Package • +3 dBm Pj jb at 1.9 GHz • Single +3V Supply • Unconditionally Stable Applications
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INA-32063
OT-363
SC-70)
INA-32063
OT-363
OT-143
5967-5769E
AN-A006
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Untitled
Abstract: No abstract text available
Text: AVANTEK IN C SCIE D ^AVANTEK • UHL%t QOObbBb 3 ■ MSA-0200 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek Chip Outline1 Features NOTAPPLICABLE • Cascadable 50 Q Gain Block • 3 dB Bandwidth: DC to 2.8 GHz
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MSA-0200
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Untitled
Abstract: No abstract text available
Text: á P * S M F -0 3 1 0 0 B ELECTRONICS Sam sung M icrow ave Sem ico nd ucto r G e lili O p tÍV H ÍZ G C l G aAs FET 2-20 GHz Description Features The SMF-03100 is a 300 |im n-channel MESFET with 0.5 nm gate length, utilizing Samsung Microwave’s gain optimized G10 process. Ti/Pt/Au gate metallization and
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SMF-03100
D017T55
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FHX13x
Abstract: No abstract text available
Text: FHX13X, FHX14X GaAs F E I & Hü MT Chips ELECTRICAL CHARACTERISE CS Ambient Temperature Ta=25° C Item Symbol Saturated Drain Current IDSS Test Conditions Min. Limit Typ. Max. Unit VDS = 2V, V q s = 0V 10 30 60 mA Transconductance 9m V d S = 2V, Id s = 10mA
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FHX13X,
FHX14X
FHX13X
12GHz
10pcs.
IS211
FHX13x
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