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    IRG4RC10U Price and Stock

    Infineon Technologies AG IRG4RC10UD

    IGBT 600V 8.5A 38W DPAK
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    Infineon Technologies AG IRG4RC10UPBF

    IGBT 600V 8.5A TO252AA
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    Infineon Technologies AG IRG4RC10UDPBF

    IGBT 600V 8.5A TO252AA
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    Avnet Americas IRG4RC10UDPBF Tube 4 Weeks 1
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    RS IRG4RC10UDPBF Bulk 5
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    Rochester Electronics IRG4RC10UDPBF 161 1
    • 1 $0.7394
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    TME IRG4RC10UDPBF 1
    • 1 $1.46
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    Infineon Technologies AG IRG4RC10UTRPBF

    IGBT 600V 8.5A TO252AA
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    Avnet Americas IRG4RC10UTRPBF Reel 4 Weeks 736
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    Rochester Electronics IRG4RC10UTRPBF 1,734 1
    • 1 $0.4958
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    Infineon Technologies AG IRG4RC10UDTRRP

    IGBT 600V 8.5A TO252AA
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    Find more IRG4RC10U price and stock on Findchips.com

    IRG4RC10U Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRG4RC10U International Rectifier 600V UltraFast 8-60 kHz Discrete IGBT in a D-Pak package; A IRG4RC10U with Standard Packaging Original PDF
    IRG4RC10U International Rectifier INSULATED GATE BIPOLAR TRANSISTOR - UltraFast Speed IGBT Original PDF
    IRG4RC10U International Rectifier Insulated Gate Bipolar Transistor Original PDF
    IRG4RC10UD International Rectifier 600V UltraFast 8-60 kHz Copack IGBT in a D-Pak package; A IRG4RC10UD with Standard Packaging Original PDF
    IRG4RC10UD International Rectifier Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Original PDF
    IRG4RC10UDPBF International Rectifier 600V UltraFast 8-60 kHz Copack IGBT in a D-Pak package; Similar to IRG4RC10UD with Lead Free Packaging Original PDF
    IRG4RC10UDPBF International Rectifier Original PDF
    IRG4RC10UDTR International Rectifier 600V UltraFast 8-60 kHz Copack IGBT in a D-Pak package; A IRG4RC10UD with Tape and Reel Packaging Original PDF
    IRG4RC10UDTR International Rectifier 600V UltraFast 8-60 kHz Copack IGBT in a D-Pak package Original PDF
    IRG4RC10UDTRL International Rectifier 600V UltraFast 8-60 kHz Copack IGBT in a D-Pak package; A IRG4RC10UD with Tape and Reel Left Packaging Original PDF
    IRG4RC10UDTRL International Rectifier 600V UltraFast 8-60 kHz Copack IGBT in a D-Pak package Original PDF
    IRG4RC10UDTRLP International Rectifier Original PDF
    IRG4RC10UDTRLP International Rectifier 600V UltraFast 8-60 kHz Copack IGBT in a D-Pak package; Similar to IRG4RC10UDTRL with Lead Free Packaging on Tape and Reel Left Original PDF
    IRG4RC10UDTRP International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 8.5A 38W DPAK Original PDF
    IRG4RC10UDTRPBF International Rectifier Original PDF
    IRG4RC10UDTRPBF International Rectifier 600V UltraFast 8-60 kHz Copack IGBT in a D-Pak package; Similar to IRG4RC10UDTR with Lead Free Packaging on Tape and Reel Original PDF
    IRG4RC10UDTRR International Rectifier 600V UltraFast 8-60 kHz Copack IGBT in a D-Pak package; A IRG4RC10UD with Tape and Reel Right Packaging Original PDF
    IRG4RC10UDTRR International Rectifier 600V UltraFast 8-60 kHz Copack IGBT in a D-Pak package Original PDF
    IRG4RC10UDTRRP International Rectifier 600V UltraFast 8-60 kHz Copack IGBT in a D-Pak package; Similar to IRG4RC10UDTRR with Lead Free Packaging on Tape and Reel Right Original PDF
    IRG4RC10UDTRRP International Rectifier Original PDF

    IRG4RC10U Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRG4RC10UD

    Abstract: No abstract text available
    Text: PD 91571A IRG4RC10UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF 1571A IRG4RC10UD O-252AA 140ns IRG4RC10UD

    AN-994

    Abstract: IRG4RC10U
    Text: PD - 91572A IRG4RC10U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 1572A IRG4RC10U O-252AA O-252AA AN-994 IRG4RC10U

    Untitled

    Abstract: No abstract text available
    Text: PD- 95768 IRG4RC10UPbF • Lead-Free www.irf.com 1 08/25/04 IRG4RC10UPbF 2 www.irf.com IRG4RC10UPbF www.irf.com 3 IRG4RC10UPbF 4 www.irf.com IRG4RC10UPbF www.irf.com 5 IRG4RC10UPbF 6 www.irf.com IRG4RC10UPbF www.irf.com 7 IRG4RC10UPbF D-Pak TO-252AA Package Outline


    Original     		PDF IRG4RC10UPbF O-252AA) EIA-481

    IRG4RC10UD

    Abstract: No abstract text available
    Text: PD 9.1571 IRG4RC10UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4RC10UD O-252AA 140ns IRG4RC10UD

    Untitled

    Abstract: No abstract text available
    Text: PD- 95768 IRG4RC10UPbF • Lead-Free www.irf.com 1 08/25/04 IRG4RC10UPbF 2 www.irf.com IRG4RC10UPbF www.irf.com 3 IRG4RC10UPbF 4 www.irf.com IRG4RC10UPbF www.irf.com 5 IRG4RC10UPbF 6 www.irf.com IRG4RC10UPbF www.irf.com 7 IRG4RC10UPbF D-Pak TO-252AA Package Outline


    Original     		PDF IRG4RC10UPbF O-252AA)

    Untitled

    Abstract: No abstract text available
    Text: IRG4RC10U Tape & Reel Information TO-252AA TR TRR 16 .3 .64 1 15 .7 ( .61 9 ) 1 2 .1 ( .4 76 ) 1 1 .9 ( .4 69 ) F E E D D IR E C TIO N TRL 1 6 .3 ( .6 4 1 ) 1 5 .7 ( .6 1 9 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) F E E D D IR E C TIO N N O T ES : 1 . C O N T R O LL IN G D IM E N S IO N : M IL LIM E T E R .


    Original     		PDF IRG4RC10U O-252AA 73202L

    AN-994

    Abstract: IRG4RC10U m 60 n 03 g10
    Text: PD - 91572A IRG4RC10U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 1572A IRG4RC10U O-252AA O-252AA Coll15 AN-994 IRG4RC10U m 60 n 03 g10

    14.5M 1982

    Abstract: No abstract text available
    Text: IRG4RC10U  ‚ 9 0% 10 % ƒ VC 9 0% Fig. 14b - Switching Loss t d off 10 % IC 5% Waveforms tf tr t d( on ) t=5µ s E on E o ff E ts = ( Eon +E off ) Package Outline D-PAK Outline Dimensions are shown in millimeters (inches) 2.38 (.094) 2.19 (.086) 6.73 (.265)


    Original     		PDF IRG4RC10U 14.5M 1982

    IRFR120

    Abstract: IRG4RC10UPBF EIA-541 jedec package TO-252AA
    Text: PD- 95768 IRG4RC10UPbF • Lead-Free www.irf.com 1 08/25/04 IRG4RC10UPbF 2 www.irf.com IRG4RC10UPbF www.irf.com 3 IRG4RC10UPbF 4 www.irf.com IRG4RC10UPbF www.irf.com 5 IRG4RC10UPbF 6 www.irf.com IRG4RC10UPbF www.irf.com 7 IRG4RC10UPbF D-Pak TO-252AA Package Outline


    Original     		PDF IRG4RC10UPbF O-252AA) EIA-481 IRFR120 IRG4RC10UPBF EIA-541 jedec package TO-252AA

    Untitled

    Abstract: No abstract text available
    Text: PD - 91572A IRG4RC10U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 1572A IRG4RC10U O-252AA O-252AA

    IRG4RC10UD

    Abstract: No abstract text available
    Text: PD 91571A IRG4RC10UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF 1571A IRG4RC10UD O-252AA 140ns IRG4RC10UD

    power rectifier diode 400v 40a

    Abstract: EIA-541 IRFR120
    Text: PD - 95328 IRG4RC10UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4RC10UDPbF O-252AA 140ns EIA-481 EIA-541. EIA-481. power rectifier diode 400v 40a EIA-541 IRFR120

    EIA-541

    Abstract: IRFR120
    Text: PD - 95328 IRG4RC10UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4RC10UDPbF O-252AA 140ns O-252AA) EIA-481 EIA-541. EIA-481. EIA-541 IRFR120

    Untitled

    Abstract: No abstract text available
    Text: PD - 95328 IRG4RC10UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4RC10UDPbF O-252AA 140ns EIA-481 EIA-541. EIA-481.

    AN-994

    Abstract: IRG4RC10U
    Text: PD - 9.1572 IRG4RC10U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		PDF IRG4RC10U O-252AA O-252AA AN-994 IRG4RC10U

    IRG4PC30S

    Abstract: igbt 20A 1200v IRG4BC20 IRG4PC40W IRGS14 IRGS14C40L 100C IRG4BC20W IRG4BC30W IRG4BC30W-S
    Text: International Rectifier EXISTING Products The IR IGBT Navigator NEW UPCOMING Products Products released to to be released within production in last 6next 3-4 months 9 months POTENTIAL Products no current plans. see bus.mgmt. Effective 15 June 2000 Voltage


    Original     		PDF O-220 Pak/TO-262 O-220 O-247 Super247 IRGP20B120UD-E IRG4BC40K IRG4PC30K IRG4PC40K IRG4PC50K IRG4PC30S igbt 20A 1200v IRG4BC20 IRG4PC40W IRGS14 IRGS14C40L 100C IRG4BC20W IRG4BC30W IRG4BC30W-S

    IPM PLASMA

    Abstract: 200W solar inverter SOLAR INVERTER IRAM136-3063B 3000w smps 300W solar inverter IRAMS10UP60A smps 2500w IRG4PC50SPBF IRAMY20UP60B
    Text: IRAM | Selection Guide Product Line Overview IRAM Applications Key Products Energy Saving Products • Appliances • Digital Control ICs Integrated design platforms that enable customers to add energyconserving features that achieve lower operating energy costs and


    Original     		PDF SIP-05 O-247AC IRG7PH30K10D IRGP20B120U-EP IRG4PH50KDPBF O-220AB; O-220 IPM PLASMA 200W solar inverter SOLAR INVERTER IRAM136-3063B 3000w smps 300W solar inverter IRAMS10UP60A smps 2500w IRG4PC50SPBF IRAMY20UP60B

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    sumida 94V-0

    Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
    Text: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.


    Original     		PDF IRFK2D054 IRFK2F054 CPV362M4U CPV363M4U CPV364M4U CPV362M4F CPV363M4F CPV364M4F CPV362M4K CPV363M4K sumida 94V-0 inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    DIODE V97

    Abstract: No abstract text available
    Text: International IOR Rectifier PD 9.1571 IRG4RC10UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode .


    OCR Scan     		PDF IRG4RC10UD 140ns DIODE V97

    irg4

    Abstract: IRG4RC10U
    Text: International IGR Rectifier PD - 9 .1 5 7 2 IRG4 RC10U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    OCR Scan     		PDF RC10U O-252AA EIA-481 irg4 IRG4RC10U

    Untitled

    Abstract: No abstract text available
    Text: PD 9.1571 International IG R Rectifier IR G 4 R C 1 0 U D PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200


    OCR Scan     		PDF O-252AA 140ns 4AS54S2