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    IRG4IBC30SPBF Search Results

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    IRG4IBC30SPBF Price and Stock

    Rochester Electronics LLC IRG4IBC30SPBF

    IGBT 600V 23.5A TO220AB
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    DigiKey IRG4IBC30SPBF Bulk 9,651 210
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    Infineon Technologies AG IRG4IBC30SPBF

    IGBT 600V 23.5A 45W TO220FP
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    DigiKey IRG4IBC30SPBF Tube
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    RS IRG4IBC30SPBF Bulk 2
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    Rochester Electronics IRG4IBC30SPBF 9,651 1
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    Flip Electronics IRG4IBC30SPBF 715
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    International Rectifier IRG4IBC30SPBF

    INSULATED GATE BIPOLAR TRANSISTOR, 23.5A I(C), 600V V(BR)CES, N-CHANNEL, TO-220AB
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    Quest Components IRG4IBC30SPBF 47
    • 1 $2.3063
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    • 100 $1.3838
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    IRG4IBC30SPBF Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG4IBC30SPBF International Rectifier Original PDF
    IRG4IBC30SPBF International Rectifier 600V DC-1 kHz (Standard) Discrete IGBT in a TO-220 FullPak package; Similar to IRG4IBC30S with Lead Free Packaging Original PDF

    IRG4IBC30SPBF Datasheets Context Search

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    TRANSISTOR marking ar code 3432

    Abstract: No abstract text available
    Text: PD - 95637 IRG4IBC30SPbF INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating freqencies <1 kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4IBC30SPbF O-220 I840G TRANSISTOR marking ar code 3432

    marking code 58W 04

    Abstract: No abstract text available
    Text: PD - 95637 IRG4IBC30SPbF INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating freqencies <1 kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF IRG4IBC30SPbF O-220 I840G marking code 58W 04

    Untitled

    Abstract: No abstract text available
    Text: PD - 95637A IRG4IBC30SPbF INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating freqencies <1 kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 5637A IRG4IBC30SPbF O-220

    transistor 58w

    Abstract: No abstract text available
    Text: PD - 95637A IRG4IBC30SPbF INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: Optimized for minimum saturation voltage and low operating freqencies <1 kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 5637A IRG4IBC30SPbF O-220 transistor 58w

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter