IRFW720S
Abstract: No abstract text available
Text: $GYDQFHG 3RZHU 026 7 IRFW720S FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 1.8Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 3.3 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V
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IRFW720S
IRFW720S
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IRFW720S
Abstract: No abstract text available
Text: IRFW720S A dvanced Power MOSFET FEATURES B V DSS — 4 0 0 V ♦ Avalanche Rugged Technology II D ♦ Lower Input Capacitance 00 00 ^ D S o n = ♦ Rugged Gate Oxide Technology 1 .8 Î 2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V
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IRFW720S
IRFW720S
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Untitled
Abstract: No abstract text available
Text: IRFW720S A d van ced Power MOSFET FEATURES BVDSS - 400 V ♦ Avalanche Rugged Technology o II ♦ Lower Input Capacitance CO CO ^D S o n = ♦ Rugged Gate Oxide Technology 1 .8 Î2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V
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IRFW720S
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PDF
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IRFW720S
Abstract: No abstract text available
Text: IRFW720S A dvanced Power MOSFET FEATURES B V DSS — 4 0 0 V ♦ Avalanche Rugged Technology II D ♦ Lower Input Capacitance CO CO ^D S o n = ♦ Rugged Gate Oxide Technology 1 .8 Î 2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V
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OCR Scan
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IRFW720S
IRFW720S
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFW720S Advanced Power MOSFET FEATURES B^DSS - 400 V ♦ Avalanche Rugged Technology CO a II ♦ Lower Input Capacitance CO ^ D S o n = ♦ Rugged Gate Oxide Technology 1 .8 Q A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V
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OCR Scan
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IRFW720S
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