IRFR91209A Search Results

IRFR91209A Price and Stock

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Renesas Electronics Corporation IRFR91209AR3603 - Bulk (Alt: IRFR91209AR3603)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	IRFR91209AR3603	Bulk		4 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Harris Semiconductor IRFR91209AR3603 5.6A, 100V, 0.6ohm, P-Channel, POWER MOSFET '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	IRFR91209AR3603		499		1	1 $0.5233 10 $0.5233 100 $0.4919 1000 $0.4448 10000 $0.4448	Buy Now

IRFR91209A Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
IRFR91209A		Fairchild Semiconductor	5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFET		Original	PDF
IRFR91209A		Harris Semiconductor	5.6A, 100V, 0.0600 Ohm P-Channel Power MOSFET		Scan	PDF
IRFR91209A		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF

IRFR91209A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IF9120 Abstract: IRFR9120 IRFR91209A IRFU9120 kp158 623E3 4411E Text: IRFU9120, IRFR9120 S E M I C O N D U C T O R 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Package • 5.6A, 100V JEDEC TO-251AA SOURCE DRAIN GATE • rDS ON = 0.600Ω • Temperature Compensating PSPICE Model	Original	PDF	IRFU9120, IRFR9120 O-251AA IRFU9120 IRFR9120 235e-12 1e-30 01e-3 05e-6) IF9120 IRFR91209A kp158 623E3 4411E
IF9120 Abstract: TA17501 IRFR9120 IRFR91209A IRFU9120 TB334 Text: IRFR9120, IRFU9120 Data Sheet 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are P-Channel enhancement mode silicon gate power field	Original	PDF	IRFR9120, IRFU9120 TA17501. IF9120 TA17501 IRFR9120 IRFR91209A IRFU9120 TB334
IF9120 Abstract: IRFR9120 irfu9120 IRFR91209A TB334 4411E Text: IRFR9120, IRFU9120 Data Sheet 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs January 2002 Features • 5.6A, 100V These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are	Original	PDF	IRFR9120, IRFU9120 TA17501. IF9120 IRFR9120 irfu9120 IRFR91209A TB334 4411E
4411E Abstract: IF9120 Text: IRFR9120, IRFU9120 Data Sheet 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs July 1999 3987.4 Features • 5.6A, 100V These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are	Original	PDF	IRFR9120, IRFU9120 TA17501. 4411E IF9120
IF9120 Abstract: No abstract text available Text: IRFR9120, IRFU9120 H A R R IS X Semiconductor 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs September 1998 Description Features 5.6 A, 100 V These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the ava	OCR Scan	PDF	IRFR9120, IRFU9120 600S2 84e-4 83e-6) 235e-12 1e-30 01e-3 05e-6) IF9120
IRFR9120 Abstract: p-channel pspice model IF9120 TA17501 123E5 Text: IRFU9120, IRFR9120 & 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Package JEDEC T 0-25 1 A A • 5.6A, 100V SOURCE • r DS ON = 0.600Q • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve	OCR Scan	PDF	IRFR9120 IRFU9120 IRFR9120 1e-30 05e-6) 23o-3 23e-5) 05e-3 35e-5) p-channel pspice model IF9120 TA17501 123E5
if9120 Abstract: TA17501 IRFR9120 IRFR91209A IRFU9120 TB334 623E3 irfr9120 harris Text: I R Semiconductor F I R R F 9 U 1 9 2 1 2 , 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 5.6A, 100V These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the ava	OCR Scan	PDF	IRFR9120, IRFU9120 600S2 TB334 IRFR9120 O-252AA IF9120 IRFU9120 O-251 if9120 TA17501 IRFR91209A TB334 623E3 irfr9120 harris