IRFH5010TR
Abstract: IRFH5010TRPBF PQFN footprint mosfet 500V 50A IRFH5010 AN-1154 IRFH5010TR2PBF
Text: PD -96297 IRFH5010PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 100 V 9.0 mΩ 65 1.2 nC 100 (@Tc(Bottom) = 25°C) Ω h PQFN 5X6 mm A Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors
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IRFH5010PbF
IRFH5010TRPBF
IRFH5010TR2PBF
181mH,
IRFH5010TR
IRFH5010TRPBF
PQFN footprint
mosfet 500V 50A
IRFH5010
AN-1154
IRFH5010TR2PBF
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Untitled
Abstract: No abstract text available
Text: IRFH5010PbF HEXFET Power MOSFET VDS 100 V RDS on max 9.0 mΩ Qg (typical) 67 nC RG (typical) 1.2 Ω (@VGS = 10V) ID 100 (@Tc(Bottom) = 25°C) h PQFN 5X6 mm A Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications
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Original
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PDF
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IRFH5010PbF
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Untitled
Abstract: No abstract text available
Text: PD-96297A IRFH5010PbF HEXFET Power MOSFET VDS 100 V RDS on max 9.0 mΩ Qg (typical) 67 nC RG (typical) 1.2 Ω (@VGS = 10V) ID 100 (@Tc(Bottom) = 25°C) h PQFN 5X6 mm A Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors
|
Original
|
PDF
|
PD-96297A
IRFH5010PbF
IRFH5010TRPBF
IRFH5010TR2PBF
181mH,
|
IRFH5010TRPBF
Abstract: mosfet 500V 50A IRFH5010TR
Text: PD-96297A IRFH5010PbF HEXFET Power MOSFET VDS 100 V RDS on max 9.0 mΩ Qg (typical) 67 nC RG (typical) 1.2 Ω (@VGS = 10V) ID 100 (@Tc(Bottom) = 25°C) h PQFN 5X6 mm A Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors
|
Original
|
PDF
|
PD-96297A
IRFH5010PbF
181mH,
IRFH5010TRPBF
mosfet 500V 50A
IRFH5010TR
|