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    IRFF91 Price and Stock

    Rochester Electronics LLC IRFF9122

    P-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFF9122 Bulk 245
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.23
    • 10000 $1.23
    		Buy Now

    International Rectifier IRFF9120

    Trans MOSFET P-CH 100V 4A 3-Pin TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Arrow Electronics IRFF9120 2,220 16 Weeks 7
    • 1 -
    • 10 $13.7678
    • 100 $13.7678
    • 1000 $13.7678
    • 10000 $13.7678
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    Component Electronics, Inc IRFF9120 10
    • 1 $9.23
    • 10 $9.23
    • 100 $6.92
    • 1000 $6
    • 10000 $6
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    New Jersey Semiconductor Products, Inc. IRFF9132

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFF9132 14,758 1
    • 1 $19.2
    • 10 $19.2
    • 100 $16.9843
    • 1000 $15.744
    • 10000 $15.744
    		Buy Now

    New Jersey Semiconductor Products, Inc. IRFF9120

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFF9120 8,742 1
    • 1 $19.2
    • 10 $19.2
    • 100 $16.9843
    • 1000 $15.744
    • 10000 $15.744
    		Buy Now

    New Jersey Semiconductor Products, Inc. IRFF9122

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFF9122 2,582 1
    • 1 $19.2
    • 10 $19.2
    • 100 $16.9843
    • 1000 $15.744
    • 10000 $15.744
    		Buy Now
    Find more IRFF91 price and stock on Findchips.com

    IRFF91 Datasheets (99)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFF9110 International Rectifier HEXFET Power Mosfet Original PDF
    IRFF9110 Semelab P-Channel MOSFET in a Hermetically Sealed TO39 Metal Package Original PDF
    IRFF9110 International Rectifier TO-39 / TO66 Package P-Channel HEXFET Scan PDF
    IRFF9110 International Rectifier TO-39 / TO-3 N-Channel HEXFET Power MOSFETs Scan PDF
    IRFF9110 Motorola European Master Selection Guide 1986 Scan PDF
    IRFF9110 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFF9110 Unknown FET Data Book Scan PDF
    IRFF9110 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF9110 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFF9111 International Rectifier TO-39 / TO66 Package P-Channel HEXFET Scan PDF
    IRFF9111 International Rectifier TO-39 / TO-3 N-Channel HEXFET Power MOSFETs Scan PDF
    IRFF9111 Motorola European Master Selection Guide 1986 Scan PDF
    IRFF9111 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFF9111 Unknown FET Data Book Scan PDF
    IRFF9111 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFF9112 International Rectifier TO-39 / TO66 Package P-Channel HEXFET Scan PDF
    IRFF9112 International Rectifier TO-39 / TO-3 N-Channel HEXFET Power MOSFETs Scan PDF
    IRFF9112 Motorola European Master Selection Guide 1986 Scan PDF
    IRFF9112 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFF9112 Unknown FET Data Book Scan PDF

    IRFF91 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFF9130 Data Sheet Title FF9 0 bt A, 0V, 00 m, February 1999 -6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF9130 -100V, -100V

    IRFF9120

    Abstract: No abstract text available
    Text: IRFF9120 Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. P-Channel MOSFET.


    Original     		PDF IRFF9120 O205AF) 11-Oct-02 IRFF9120

    Untitled

    Abstract: No abstract text available
    Text: P-CHANNEL POWER MOSFET IRFF9130 / 2N6849 • MOSFET Transistor In A Hermetic Metal TO-205AF Package • Single Pulse Avalanche Energy Rated • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


    Original     		PDF IRFF9130 2N6849 O-205AF -100V 500mJ O-205AF)

    MOSFET

    Abstract: 2N6845
    Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.SA 2N6845 IRFF9120 MECHANICAL DATA Dimensions in mm (inches) P-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 864(034) 9 40 (0 37) 801 (0315) 9,01 (0 355)


    Original     		PDF 2N6845 IRFF9120 -100V 300ms, MOSFET 2N6845

    IRFF9130

    Abstract: No abstract text available
    Text: IRFF9130 Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. P-Channel MOSFET.


    Original     		PDF IRFF9130 O205AF) 11-Oct-02 IRFF9130

    JANTX2N6845

    Abstract: diode 50v 40A ir IRFF9120 JANTXV2N6845
    Text: PD - 90552C IRFF9120 JANTX2N6845 JANTXV2N6845 REF:MIL-PRF-19500/563 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF9120 BVDSS -100V RDS(on) 0.60Ω ID -4.0A  The HEXFET technology is the key to International


    Original     		PDF 90552C IRFF9120 JANTX2N6845 JANTXV2N6845 MIL-PRF-19500/563 O-205AF) -100V paramete252-7105 JANTX2N6845 diode 50v 40A ir IRFF9120 JANTXV2N6845

    Untitled

    Abstract: No abstract text available
    Text: PD - 90552C IRFF9120 JANTX2N6845 JANTXV2N6845 REF:MIL-PRF-19500/563 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF9120 BVDSS -100V RDS(on) 0.60Ω ID -4.0A  The HEXFET technology is the key to International


    Original     		PDF 90552C IRFF9120 JANTX2N6845 JANTXV2N6845 MIL-PRF-19500/563 O-205AF) -100V

    Untitled

    Abstract: No abstract text available
    Text: IRFF9120 Data Sheet Title FF9 0 bt A, 0V, m, an- June 1999 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers,


    Original     		PDF IRFF9120

    IRFF9120

    Abstract: No abstract text available
    Text: IRFF9120 Data Sheet June 1999 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET • 4A, 100V • rDS ON = 0.60Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics Formerly developmental type TA17501.


    Original     		PDF IRFF9120 TA17501. IRFF9120

    IRFF9110

    Abstract: No abstract text available
    Text: IRFF9110 Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. P-Channel MOSFET.


    Original     		PDF IRFF9110 O205AF) 11-Oct-02 IRFF9110

    IRFF9110

    Abstract: No abstract text available
    Text: PD - 90388 REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF9110 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) IRFF9110 -100V 1.2Ω ID -2.5A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF O-205AF) IRFF9110 -100V switchin252-7105 IRFF9110

    Untitled

    Abstract: No abstract text available
    Text: 2N6845 IRFF9120 MECHANICAL DATA Dimensions in mm inches P–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. VDSS ID(cont) RDS(on) 0.89 max. (0.035) 0.41 (0.016)


    Original     		PDF 2N6845 IRFF9120 -100V O-205AF) 300ms,

    Untitled

    Abstract: No abstract text available
    Text: PD - 90388 REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF9110 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) IRFF9110 -100V 1.2Ω ID -2.5A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF O-205AF) IRFF9110 -100V

    IRFF9120

    Abstract: 2n6845 TO-205AF Package
    Text: 2N6845 IRFF9120 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. VDSS ID(cont) RDS(on) 0.89 max. (0.035) 0.41 (0.016)


    Original     		PDF 2N6845 IRFF9120 -100V O-205AF) 300ms, IRFF9120 2n6845 TO-205AF Package

    Untitled

    Abstract: No abstract text available
    Text: m Ha r r is IRFF9120, IRFF9121 IRFF9122, IRFF9123 Avalanche Energy Rated P-Channel Power MOSFETs January 1994 Package Features T 0 -2 0 5 A F BOTTOM VIEW • -3.5 A and -4A , -8 0 V and -1 0 0 V • rDS ON = 0 .6 0 0 and 0 .8 0 0 GATE SOURCE • Single Pulse Avalanche Energy Rated


    OCR Scan     		PDF IRFF9120, IRFF9121 IRFF9122, IRFF9123 IRFF9121, IRFF9122 IRFF9123

    IRFF9131

    Abstract: IRFF9133 IRFF9130 IRFF9132 transistors c 2216
    Text: Rugged Power MOSFETs IRFF9130, IRFF9131 IRFF9132, IRFF9133 F ile N u m b e r 2216 Avalanche-Energy-Rated P-Channel Power MOSFETs -5.5A and -6.5A, -60V and -100V ibs on = 0.30Q and 0.400 TERMINAL DIAGRAM □ Features: • S in g le p u ls e a va la n ch e e n e rg y ra te d


    OCR Scan     		PDF IRFF9130, IRFF9131 IRFF9132, IRFF9133 -100V 92CS-43296 IRFF9131, IRFF9132 IRFF9133 IRFF9130 transistors c 2216

    Untitled

    Abstract: No abstract text available
    Text: H a r r IRFF9130, IRFF9131, IRFF9132, IRFF9133 i s s e m i c o n d u c t o r -5.5A and -6.5A, -80V and -100V, 0.30 and 0.40 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -5.5A and-6.5A ,-80V and-100V These are P-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFF9130, IRFF9131, IRFF9132, IRFF9133 -100V, and-100V

    IRF024

    Abstract: IRF034 IRF045 IRFF9030 IRFF9010 IRFF9020 IRFF9111 IRFF9112 IRFF9113 IRFF9121
    Text: INTERNATIONAL RECTIFIER BbE D MflSSMSa GDiaOTti ê International is ] R ectifier H EXFET Hermetic Package r - 3 c?~/'3 TO-39 N-Channel Part Number V q s Drain Source Voltage Volts IRFF9010 IRFF9020 IRFF9030 -50 IRFF9113 IRFF9111 IRFF9123 IRFF9121 IRFF9133


    OCR Scan     		PDF IRFF9010 TQ-205AF IRFF9020 IRFF9030 IRFF9113 IRFF9111 IRFF9123 IRFF9121 IRFF9133 IRFF9131 IRF024 IRF034 IRF045 IRFF9030 IRFF9020 IRFF9111 IRFF9112 IRFF9121

    2N6844

    Abstract: 2N6846 2N6848 T30 rectifier 2N6850 T0-213AA IRFF9010 IRFF9012 IRFF9020 IRFF9022
    Text: HERMETIC PACKAGE HEXFETs — INTERNATIONAL RECTIFIER SbE D • INTERNATIONAL. RECTIFIER 4ÛSS4S2 DOlOSbO 7 ■ ll&R T*-3 ^ - 0 3 ~ TO-39 Package P-CHANNEL Types IRFF9030* IRFF9032* IRFF9020“ IRFF9022* IRFF9010* IRFF9012* IRFF9131 IRFF9133 2N6848 IRFF9121


    OCR Scan     		PDF 5S452 IRFF9030* T0-205AF IRFF9032* IRFF9020" IRFF9022* IRFF9010* IRFF9012* IRFF9131 IRFF9133 2N6844 2N6846 2N6848 T30 rectifier 2N6850 T0-213AA IRFF9010 IRFF9012 IRFF9020 IRFF9022

    IRF024

    Abstract: 2N6845 IRF035 33MIL
    Text: International Í^ R ÍF W 4 Íf¡ÖT HEXFFT n C A rC I ^ r ie u m ie r un Power MOSFETs Hermetic Package TO-39 N-Channel Part Number Vos Drain Source Voltage Volts IRFF9010 IRFF9020 IRFF9030 -50 IRFF9113 IRFF9111 IRFF9123 IRFF9121 IRFF9133 IRFF9131 -80


    OCR Scan     		PDF IRFF9010 IRFF9020 IRFF9030 IRFF9113 IRFF9111 IRFF9123 IRFF9121 IRFF9133 IRFF9131 IRFF9112 IRF024 2N6845 IRF035 33MIL

    rectifier diode 1-35 LA V6

    Abstract: IRFF9120 IRFF9122 IRFF9123 IRFF9121 2CS-432T
    Text: Rugged Power MOSFETs File N u m b e r 2287 IRFF9120, IRFF9121 IRFF9122, IRFF9123 Avalanche-Energy-Rated P-Channel Power MOSFETs -3.5 A and -4 A, -60 V, -100 V fDS on = 0.60 Q and 0.80 O TERMINAL DIAGRAM D Features: • S ingle pulse avalanche energy rated


    OCR Scan     		PDF IRFF9120, IRFF9121 IRFF9122, IRFF9123 IRFF9121, IRFF9122 IRFF9123 92CS-43276 2CS-432TÂ rectifier diode 1-35 LA V6 IRFF9120 IRFF9121 2CS-432T

    9131

    Abstract: IRFF9131 1RFF9130 IRFF9130 3919 L 9132 k 3919 IRFF9132 IRFF9133 LAE 0132
    Text: SILICONIX INC 18E D • ÔSSH73S 0 0 1 4 9 3 7 T ■ IRFF9130/9131 /9132/9133 C X 'S i f l c c T n l x J u w incorporated P-Channel Enhancement Mode Transistors T -3 BOTTOM VIEW. PRODUCT SUMMARY PART NUMBER V BR|DSS IRFF9130 " g p Id (A -100 0.30 -6.5 IRFF9131


    OCR Scan     		PDF IRFF9130/9131 O-205AF IRFF9130 IRFF9131 IRFF9132 IRFF9133 9131 1RFF9130 3919 L 9132 k 3919 LAE 0132

    tc 9123

    Abstract: IC 9122 IRFF9121 IRFF9122 IRFF9120 IRFF9123 9121
    Text: SILICONIX INC IflE I> f Ô254735 D014Ô33 2 U IRFF9120/9121 /9122/9123 « y S ilìc o n ix J M • in c o r p o ra te d P-Channel Enhancement Mode Transistors " T - l 0! - ! 0 ! TQ-205AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR DSS IRFF9120 •d ,Dg r


    OCR Scan     		PDF IRFF9120/9121/9122/9123 IRFF9120 IRFF9121 IRFF9122 IRFF9123 O-205AF tc 9123 IC 9122 9121

    MFE9200

    Abstract: BS107 MOTOROLA BS170 MOTOROLA MPF4150 IRFF9110 IRFF9111 IRFF9112 IRFF9113 IRFF9120 IRFF9121
    Text: FIELD-EFFECT TRANSISTORS continued TMOS Power MOSFETs (continued) VGS (t/h) 0n rds (on) @ ID •d s s V(BH)DSS ■g s s C |S S ^rss •on •off n Max (A) Min Max //A Max (V) Min (nA) Max (pf) Max (pf) Max (ns) Max (ns) Max IRFF9110 IRFF9111 IRFF9112 IRFF9113


    OCR Scan     		PDF IRFF9110 IRFF9111 IRFF9112 IRFF9113 IRFF9120 IRFF9121 IRFF9122 IRFF9123 IRFF9130 IRFF9131 MFE9200 BS107 MOTOROLA BS170 MOTOROLA MPF4150