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    Vishay Intertechnologies IRFC420B

    MOSFET N-CHANNEL 500V - Bulk (Alt: IRFC420B)
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    Avnet Americas IRFC420B Bulk 6,742
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    Vishay Intertechnologies IRFC420AB

    MOSFET N-CHANNEL 500V - Bulk (Alt: IRFC420AB)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas IRFC420AB Bulk 12 Weeks 1
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    IRFC420 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRFC420R International Rectifier IGBTs, HEXFET, HEXSENSE and Logic Level HEXFET Die Scan PDF

    IRFC420 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IR2104 APPLICATION NOTE

    Abstract: SD-50 Rectifier Diode ir2104 IRFC420 ir04 ir2104 application MOSFET definitions IR04H420 RECOVERY TIME MOSFET SD-50 diode
    Text: Data Sheet No. PD-6.078 IR04H420 HIGH VOLTAGE HALF-BRIDGE Features n Output Power MOSFETs in half-bridge configuration n 500V Rated Breakdown Voltage n High side gate drive designed for bootstrap operation n Matched propagation delay for both channels n Independent high and low side output channels


    Original     		PDF IR04H420 IR04H420 IR2104 APPLICATION NOTE SD-50 Rectifier Diode ir2104 IRFC420 ir04 ir2104 application MOSFET definitions RECOVERY TIME MOSFET SD-50 diode

    irfc420

    Abstract: MOSFET Half Bridge Configuration IR02H420 IR2102 RECOVERY TIME MOSFET
    Text: Data Sheet No. PD-6.076 IR02H420 HIGH VOLTAGE HALF-BRIDGE Features n n n n n n n n Product Summary Output Power MOSFETs in half-bridge configuration 500V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Matched propagation delay for both channels


    Original     		PDF IR02H420 IR02H420 irfc420 MOSFET Half Bridge Configuration IR2102 RECOVERY TIME MOSFET

    IRFC420

    Abstract: IR51H420 IR2151 2.5v zener chip
    Text: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.057D IR51H420 SELF-OSCILLATING HALF-BRIDGE Features n n n n Product Summary Output Power MOSFETs in half-bridge configuration 500V Rated Breakdown Voltage High side gate drive designed for bootstrap operation


    Original     		PDF IR51H420 IR51H420 IRFC420 IR2151 2.5v zener chip

    IR53HD420

    Abstract: IR2153 ir2153 application power supply using IR2153 ir2153 shutdown an IR2153 ir53h420 IRFC420 half bridge circuit using IR2153 zener diode 12V 20W
    Text: PD-6140-G IR53H420/IR53HD420 SELF-OSCILLATING HALF BRIDGE Features • Output Power MOSFETs in half-bridge configuration • • • • 500V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Bootstrap diode integrated into package HD type


    Original     		PDF PD-6140-G IR53H420/IR53HD420 IR53HD420 IR2153 ir2153 application power supply using IR2153 ir2153 shutdown an IR2153 ir53h420 IRFC420 half bridge circuit using IR2153 zener diode 12V 20W

    IRFC420

    Abstract: half-bridge switching gate driver IR03H420 IR2103
    Text: Data Sheet No. PD-6.077 IR03H420 HIGH VOLTAGE HALF-BRIDGE Features Product Summary n Output Power MOSFETs in half-bridge configuration n 500V Rated Breakdown Voltage n High side gate drive designed for bootstrap operation n Matched propagation delay for both channels


    Original     		PDF IR03H420 IR03H420 IRFC420 half-bridge switching gate driver IR2103

    IRFC420

    Abstract: IR02H420 IR2102
    Text: Data Sheet No. PD-6.076 IR02H420 HIGH VOLTAGE HALF-BRIDGE Product Summary Features n n n n n n n n Output Power MOSFETs in half-bridge configuration 500V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Matched propagation delay for both channels


    Original     		PDF IR02H420 IR02H420 IRFC420 IR2102

    IR51H420

    Abstract: IRFC420 IR2151
    Text: Data Sheet No. PD-6.057D IR51H420 SELF-OSCILLATING HALF-BRIDGE Features n n n n Product Summary Output Power MOSFETs in half-bridge configuration 500V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Accurate timing control for both Power MOSFETs


    Original     		PDF IR51H420 IR51H420 IRFC420 IR2151

    IR2151

    Abstract: IR51HD420 IRFC420
    Text: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.057D IR51HD420 SELF-OSCILLATING HALF-BRIDGE Features n n n n n Product Summary Output Power MOSFETs in half-bridge configuration 500V Rated Breakdown Voltage High side gate drive designed for bootstrap operation


    Original     		PDF IR51HD420 IR2151 IR51HD420 IRFC420

    IR51HD420

    Abstract: IRFC420 IR2151
    Text: Data Sheet No. PD-6.057D IR51HD420 SELF-OSCILLATING HALF-BRIDGE Features n n n n n Product Summary Output Power MOSFETs in half-bridge configuration 500V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Bootstrap diode integrated into package


    Original     		PDF IR51HD420 IR51HD420 IRFC420 IR2151

    1RF520

    Abstract: 1RFP460 1RFP150 IRF9540 equivalent irfp450 equivalent 1rfbc20 IRF9640 equivalent 1RFP054 1RFPG50 IRFP260 equivalent
    Text: International HEXFET Power MOSFETs I ö R Rectifier HEX Size Part Number VDS Recommended Source Bonding Wire RDS on Die Outline Figure m|s mm Equivalent Device Type HEXFET® Die 2 IRFC420 500 3 D9 8 0.2 *> IRFCC20 600 4.4 DIO 8 0.2 1RFBC20 2 IRFCE20 800


    OCR Scan     		PDF IRFC420 IRFCC20 IRFCE20 IRFCF20 IRFCG20 1RFC034 IRFC120 IRFCG50 IRFCC40 IRFC460 1RF520 1RFP460 1RFP150 IRF9540 equivalent irfp450 equivalent 1rfbc20 IRF9640 equivalent 1RFP054 1RFPG50 IRFP260 equivalent

    irfc140

    Abstract: IRFC9230 IRFC9140 IRFC9240 IRFC120 IRFC330 IRFC420 IRFC340 IRFC9130 irfc230
    Text: SURFACE MOUNT DEVICES o PEAK RDS ON DEVICE B V o ss *D @0.5 (D PACKAGE PAK 1 TYPE VOLTS AMPS OHMS CHIP SNLC120 100 9.2 0.27 IRFC120 SNLC220 200 5.0 0.08 IRFC220 SNLC320 400 3.3 1.80 IRFC320 SNLC420 500 2.5 3.08 IRFC420 SNLC130 100 200 14.0 0.16 IRFC130 9.0


    OCR Scan     		PDF SNLC120 SNLC220 SNLC320 SNLC420 SNLC130 SNLC230 SHLC330 SNLC430 SNLC140 SNLC240 irfc140 IRFC9230 IRFC9140 IRFC9240 IRFC120 IRFC330 IRFC420 IRFC340 IRFC9130 irfc230

    IRFC430

    Abstract: irfg 40 IRFC330 IRFC120 stf460 IRFCG40 IRFC420 IRFCF30 stf250 IRFC440
    Text: MOSFETS N CHANNEL PO W ER M O SFETS PACKAGE T0213AA TO-66 PACKAGE T0204 (TO-3) DEVICE TYPE bvdss VOLTS STFJ120 100 STFJ130 RDS(ON) @0.5 'D OHMS •d CONTINUOUS AMPS PD MAX WATTS 40 CHIP 100 0.3 0.18 12.0 100 0.085 15.0 50 70 IRFG 30 STFJ140 STFJ220 0.8 5.0


    OCR Scan     		PDF T0213AA STFJ120 STFJ130 STFJ140 STFJ220 STFK23Q STFJ240 STFJ320 STFJ330 STFJ340 IRFC430 irfg 40 IRFC330 IRFC120 stf460 IRFCG40 IRFC420 IRFCF30 stf250 IRFC440

    IRFZ44 equivalent

    Abstract: IRFBE30 equivalent IRFBg30 equivalent IRFPE40 equivalent IRFC110 IRFP150 equivalent IRFZ14 equivalent irfp450 equivalent Irfp250 irfp460 IRFCE30
    Text: International l SRectifier HEXFET Power MOSFETs Table I. HEXFET III Die Recomnn. Source Bondi ig Wire Die 1 Outline Figure mils mm Equivalent Device Type HEX Size Part Number V DS Z IRFC1Z0 100 2.400 D1 3 0.08 IRFS1Z0 1 1 1 1 1 IRFC014 IRFC110 IRFC210 IRFC214


    OCR Scan     		PDF IRFC014 IRFC110 IRFC210 IRFC214 IRFC310 IRFC024 IRFC120 IRFC220 IRFC224 IRFC320 IRFZ44 equivalent IRFBE30 equivalent IRFBg30 equivalent IRFPE40 equivalent IRFP150 equivalent IRFZ14 equivalent irfp450 equivalent Irfp250 irfp460 IRFCE30

    Cross Reference power MOSFET

    Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
    Text: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258


    OCR Scan     		PDF T0-204AA T0-204AE T0-220AB T0-220AC Cross Reference power MOSFET irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630

    IRF540 n-channel MOSFET

    Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R
    Text: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.


    OCR Scan     		PDF QD102t IRF540 n-channel MOSFET GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R

    irf*234 n

    Abstract: IRFBE40 IRF540 p-channel MOSFET IRFBG40 irf540 800v irfz24 mosfet IRFCG50 IRFC034 HEXFET Guide international rectifier d10
    Text: INTERNATIONAL RECTIFIER 2bE D International S S Rectifier • 4flSS455 OOIQIOO b ■ HEXFET Die T-3J'?0 . Electrical Probe Specifications for N-Channel HEXFET ill Power MOSFET Die Recommended Bond Wire Size Closest Packaged Part Number Die Figure Number 5


    OCR Scan     		PDF 4flSS455 irf*234 n IRFBE40 IRF540 p-channel MOSFET IRFBG40 irf540 800v irfz24 mosfet IRFCG50 IRFC034 HEXFET Guide international rectifier d10

    IRFC9130

    Abstract: irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430
    Text: APPLICATION NO TE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power


    OCR Scan     		PDF AN-955. AN-986. 0-60V AN-964D IRFC9130 irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430

    IRFZ44 equivalent

    Abstract: IRFBE30 equivalent IRFP260 equivalent IRFC110 irf634 equivalent IRF540 IRFZ48 equivalent irf*234 n IRFCG50 IRFC034
    Text: I I n t e r n a t io n a l R e c t if ie r HEXFET Power MOSFETS BVdss Drain Sourct Vofcag* Vote PMt Numbtr Rd s m Ondate IMltMCI (Ohm) H E X -P a k M o d u l« P a ra lle l Chip N-Cham xel 60 IRFK4H054 100 IRFK4H150 200 IRFK4H250 400 IRFK4H350 500 IRFK4H450


    OCR Scan     		PDF IRFK4H054 IRFK4H150 IRFK4H250 IRFK4H350 IRFK4H450 IRFK4HC50 IRFK4HE50 IRFK4J054 IRFK4J150 IRFK4J250 IRFZ44 equivalent IRFBE30 equivalent IRFP260 equivalent IRFC110 irf634 equivalent IRF540 IRFZ48 equivalent irf*234 n IRFCG50 IRFC034

    IRFBE40

    Abstract: IRFBG40 MOSFET IRF460 IRLC140 irfc9024 IRFBF40 irlc120 IRLC014 IRFC9034 IRLC034
    Text: International 1»] Rectifier Power M O S FET s HEX-Pak Modules TÜ -2 40 N-Channel Part Number s Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) IRFK2D054 IRFK2D150 IRFK2D250 IRFK2D350 IRFK2D450 IRFK2DC50 IRFK2DE50 60 100 200 400 500 600 800


    OCR Scan     		PDF IRFK2D054 IRFK2D150 IRFK2D250 IRFK2D350 IRFK2D450 IRFK2DC50 IRFK2DE50 IRFK3D150 IRFK3D250 IRFK3D350 IRFBE40 IRFBG40 MOSFET IRF460 IRLC140 irfc9024 IRFBF40 irlc120 IRLC014 IRFC9034 IRLC034

    406J

    Abstract: JD 1801 irfc230 IRFC430 IRFC9230 IRFC130 2N6756 IRFC110 2N6847 irfc250
    Text: 27 Katrina Road Chelmsford, MA 01824 Tel: 978 256-3321 Fax: (978)250-1046 Web: www.stcsemi.com A POW ERHO USE All devices are available screened to TX, TXV, or S Level equivalent. Reference the High-Reliability Screening table for details. Contact your local Representative or STC


    OCR Scan     		PDF 2N6756 2N6758 2N6760 2N6762 2N6768 2N6770 IRFC130 IRFC230 IRFC330 IRFC430 406J JD 1801 IRFC9230 IRFC110 2N6847 irfc250

    FL110

    Abstract: LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc
    Text: H EXFET Other Products from IR SOT-89 N-Channel V BR q s s Drain-to-Source ROS(on) Part Breakdown On-State Number Voltage Resistance (Volt) (Ohms) IRFS1Z0 100 Power MOSFETs Surface Mount Iq Continuous Drain Current 25°C (Amps) 2.4 0.82 Iq Continuous RthJAMax P d @ T c = 25°C Case


    OCR Scan     		PDF OT-89 OT-89 IRCC044 IRCC140 IRCC240 IRCC244 IRCC340 IRCC440 IRCC054 FL110 LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc

    HEXFET III - A new Generation of Power MOSFETs

    Abstract: irf 1490 AN-964D irfc9024 AN-966 1000V P-channel MOSFET application new hexfet AN966 transistor 9527 IRFC210
    Text: APPLICATION NOTE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power


    OCR Scan     		PDF AN-955. AN-986. AN-966. -250V AN-964D HEXFET III - A new Generation of Power MOSFETs irf 1490 AN-964D irfc9024 AN-966 1000V P-channel MOSFET application new hexfet AN966 transistor 9527 IRFC210