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    Infineon Technologies AG IRF7807VD1TRPBF

    MOSFET N-CH 30V 8.3A 8SO
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    IRF7807VD1TRPBF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF7807VD1TRPBF International Rectifier Original PDF

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    Abstract: No abstract text available
    Text: IRF7807VD1PbF-1 FETKY™ MOSFET / SCHOTTKY DIODE VDS RDS on max 30 V 25 mΩ Qg (typical) QSW (typical) 9.5 3.4 nC nC QOSS (typical) ID 12 nC 8.3 A (@VGS = 4.5V) (@TA = 25°C) A/S 1 8 K/D A/S 2 7 K/D A/S 3 6 K/D G 4 5 K/D D Top View SO-8 Applications l Co-Pack N-channel HEXFET POWER MOSFET and Schottky Diode


    Original     		PDF IRF7807VD1PbF-1 D-020D