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    IRF1010 Price and Stock

    Infineon Technologies AG IRF1010EZPBF

    MOSFET N-CH 60V 75A TO220AB
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    Infineon Technologies AG IRF1010ESTRLPBF

    MOSFET N-CH 60V 84A D2PAK
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    Infineon Technologies AG IRF1010ZSTRLPBF

    MOSFET N-CH 55V 75A D2PAK
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    DigiKey IRF1010ZSTRLPBF Cut Tape 1,859 1
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    Infineon Technologies AG IRF1010NSTRLPBF

    MOSFET N-CH 55V 85A D2PAK
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    Infineon Technologies AG IRF1010EPBF

    MOSFET N-CH 60V 84A TO220AB
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    DigiKey IRF1010EPBF Tube 1,333 1
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    IRF1010 Datasheets (94)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF1010 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF1010 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF1010 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF1010E International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF1010E with Standard Packaging Original PDF
    IRF1010E International Rectifier HEXFET Power MOSFET Original PDF
    IRF1010E International Rectifier HEXFET Power MOSFET Original PDF
    IRF1010E Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF1010E International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 60V, 81A, Pkg Style TO-220AB Scan PDF
    IRF1010EL International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF1010EL with Standard Packaging Original PDF
    IRF1010EL International Rectifier HEXFET Power MOSFET Original PDF
    IRF1010EL International Rectifier HEXFET Power MOSFET Original PDF
    IRF1010EL Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRF1010ELPBF International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF1010EL with Lead Free Packaging Original PDF
    IRF1010ELPBF International Rectifier TRANS MOSFET N-CH 60V 84A 3TO-262 Original PDF
    IRF1010EPBF International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to the IRF1010E with Lead-Free Packaging. Original PDF
    IRF1010EPBF International Rectifier TRANS MOSFET N-CH 60V 84A 3TO-220AB Original PDF
    IRF1010ES International Rectifier HEXFET Power Mosfet Original PDF
    IRF1010ES International Rectifier HEXFET Power Mosfet Original PDF
    IRF1010ES International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF1010ES with Standard Packaging Original PDF
    IRF1010ES Toshiba Power MOSFETs Cross Reference Guide Original PDF

    IRF1010 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AN-994

    Abstract: IRF1010EL IRF1010ES IRF530S IRF1010ELPBF
    Text: PD - 95444 Advanced Process Technology l Surface Mount IRF1010ES l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010ESPbF IRF1010ELPbF l HEXFET Power MOSFET D VDSS = 60V


    Original     		IRF1010ES) IRF1010EL) IRF1010ESPbF IRF1010ELPbF EIA-418. AN-994 IRF1010EL IRF1010ES IRF530S IRF1010ELPBF PDF

    AN-994

    Abstract: IRF1010N IRF1010NS IRF530S
    Text: Previous Datasheet Index Next Data Sheet PD 9.1372 IRF1010NS PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.012Ω


    Original     		IRF1010NS AN-994 IRF1010N IRF1010NS IRF530S PDF

    IRF1010N

    Abstract: IRF1010
    Text: Previous Datasheet Index Next Data Sheet PD 9.1278B IRF1010N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.012 Ω ID = 72A Description


    Original     		1278B IRF1010N O-220 IRF1010N IRF1010 PDF

    marking code 43a

    Abstract: 43A MARKING CODE IRF1010NS AN-994 IRF1010N IRF1010NL
    Text: PD - 91372B IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 0.011W G ID = 84A† Description


    Original     		91372B IRF1010NS/L IRF1010NS) IRF1010NL) packag10) marking code 43a 43A MARKING CODE IRF1010NS AN-994 IRF1010N IRF1010NL PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 91670 IRF1010E HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description Advanced HEXFET® Power MOSFETs from International


    Original     		IRF1010E O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95361A IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 7.5mΩ


    Original     		5361A IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF AN-994. PDF

    IRF1010Z

    Abstract: IRF1010ZL IRF1010ZS
    Text: PD - 95361 IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF AUTOMOTIVE MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET


    Original     		IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF IRF1010Z IRF1010ZL IRF1010ZS PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF1010NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters inches D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L OT CODE 80 2 4 AS S E M B L E D ON W W 0 2, 20 00 IN T H E AS S E M B L Y L IN E "L " IN T E R N AT IO N AL


    Original     		IRF1010NS/LPbF EIA-418. PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF1010NPbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584)


    Original     		IRF1010NPbF O-220AB O-220AB. PDF

    AN-994

    Abstract: IRF1010N IRF1010NL IRF1010NS to262 pcb footprint
    Text: PD - 91372B IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D RDS(on) = 0.011W G ID = 84A† Description


    Original     		91372B IRF1010NS/L IRF1010NS) IRF1010NL) AN-994 IRF1010N IRF1010NL IRF1010NS to262 pcb footprint PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94965 IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description


    Original     		IRF1010EPbF O-220 fo20AB PDF

    marking F53

    Abstract: AN-994 IRF1010N IRF1010NL IRF1010NS SS2000
    Text: PD - 9.1372A IRF1010NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010NS Low-profile through-hole (IRF1010NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.011Ω G ID = 84A†


    Original     		IRF1010NS/L IRF1010NS) IRF1010NL) marking F53 AN-994 IRF1010N IRF1010NL IRF1010NS SS2000 PDF

    irf1010e

    Abstract: irf1010e equivalent *f1010e
    Text: PD - 9.1670B IRF1010E HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 0.012Ω G ID = 81A… S Description Fifth Generation HEXFETs from International Rectifier


    Original     		1670B IRF1010E O-220 irf1010e irf1010e equivalent *f1010e PDF

    51a marking

    Abstract: IRF1010EZS AN-994 IRF1010EZ IRF1010EZL
    Text: PD - 94724B IRF1010EZ IRF1010EZS IRF1010EZL AUTOMOTIVE MOSFET HEXFET Power MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax


    Original     		94724B IRF1010EZ IRF1010EZS IRF1010EZL O-220AB 51a marking IRF1010EZS AN-994 IRF1010EZ IRF1010EZL PDF

    DM marking code

    Abstract: irf 560 IRF1010Z IRF1010ZL IRF1010ZS
    Text: PD - 94652A IRF1010Z IRF1010ZS IRF1010ZL AUTOMOTIVE MOSFET Features ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V


    Original     		4652A IRF1010Z IRF1010ZS IRF1010ZL AN-994. O-220AB DM marking code irf 560 IRF1010Z IRF1010ZL IRF1010ZS PDF

    AN-994

    Abstract: IRF1010EL IRF1010ES *f1010e
    Text: PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount IRF1010ES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G Description


    Original     		IRF1010ES IRF1010EL IRF1010ES) IRF1010EL) AN-994 IRF1010EL IRF1010ES *f1010e PDF

    IRF1010Z

    Abstract: IRF1010ZL IRF1010ZS
    Text: PD - 95361 IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF AUTOMOTIVE MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET


    Original     		IRF1010ZPbF IRF1010ZSPbF IRF1010ZLPbF AN-994. O-220AB IRF1010Z IRF1010ZL IRF1010ZS PDF

    IRF1010E

    Abstract: No abstract text available
    Text: PD - 91670 IRF1010E HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description Advanced HEXFET® Power MOSFETs from International


    Original     		IRF1010E O-220 O-220AB IRF1010E PDF

    AN-994

    Abstract: IRF1010EL IRF1010ES
    Text: PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount IRF1010ES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G Description


    Original     		IRF1010ES IRF1010EL IRF1010ES) IRF1010EL) AN-994 IRF1010EL IRF1010ES PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1372A International IQ R Rectifier IRF1010NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF101ONS • Low-profile through-hole(IRF101ONL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated


    OCR Scan     		IRF101ONS) IRF101ONL) PDF

    IRF1010E

    Abstract: No abstract text available
    Text: P D -9 .1 6 7 0 B International I R Rectifier IRF1010E HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 60 V R ü S o n = 0.0120 . ID = 81 A © Description Fifth G e n e ratio n H E X F E T s from International Rectifier


    OCR Scan     		IRF1010E IRF1010E PDF

    IRF1010E

    Abstract: *f1010e
    Text: P D - 9 .1670A International IGR Rectifier IRF1010E H E X FE T Pow er M O S F E T • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vqss - 6 0 V f^DS on = 0 . 0 1 2 0 lD = 81 A®


    OCR Scan     		IRF1010E O-220 IRF1010E *f1010e PDF

    IRF1010

    Abstract: to-22qab XGR719C 1789
    Text: TO-22QAB EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO O IRF1010 K a i 71 ge 17 ASSEMBLY LOT CODE PART NUMBER 89 DATE CODE YEAR 7 = 1997 WEEK 19 LINE C


    OCR Scan     		O-22QAB IRF1010 XGR719C to-22qab 1789 PDF

    IRF1010E

    Abstract: IOR 1010
    Text: International lö R Rectifier P D - 9 .1 6 7 0 IRF1010E PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss f^DS on = 60 V = 0.01 2Q. ID = 81 A Description


    OCR Scan     		IRF1010E IRF1010E IOR 1010 PDF