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    Infineon Technologies AG IPD09N03LB G

    MOSFET N-CH 30V 50A TO252-3
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    IPD09N03LB Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IPD09N03LB Infineon Technologies OptiMOS2 - SuperSO8, SO8, DPAK Original PDF
    IPD09N03LB G Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 50A DPAK Original PDF
    IPD09N03LBG Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 50A DPAK Original PDF
    IPD09N03LBG Infineon Technologies OptiMOS 2 Power-Transistor Original PDF

    IPD09N03LB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    09n03lb

    Abstract: 09N03 09N03L TRANSISTOR SMD MARKING CODE 42 IPD09N03LB PG-TO252-3-11 IPD09N03LBG
    Text: OptiMOS 2 Power-Transistor IPD09N03LB G IPS09N03LB G IPU09N03LB G IPF09N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 9.1 mΩ ID 50 A • N-channel, logic level


    Original     		PDF IPD09N03LB IPU09N03LB IPS09N03LB IPF09N03LB PG-TO252-3-11 PG-TO251-3-11 09n03lb 09N03 09N03L TRANSISTOR SMD MARKING CODE 42 PG-TO252-3-11 IPD09N03LBG

    09N03

    Abstract: S4264 09n03lb IPD09N03LB JESD22 PG-TO252-3-11 P-TO252-3-11 Q67042-S4264
    Text: IPD09N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 30 V R DS on),max 9.1 mΩ ID 50 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPD09N03LB PG-TO252-3-11 Q67042-S4264 09N03LB 09N03 S4264 09n03lb JESD22 PG-TO252-3-11 P-TO252-3-11 Q67042-S4264

    09N03

    Abstract: 09n03lb 09n03l IPD09N03LB PG-TO252-3-11
    Text: IPD09N03LB G IPF09N03LB G IPS09N03LB G IPU09N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max (SMD version) 9.1 mΩ


    Original     		PDF IPD09N03LB IPF09N03LB IPS09N03LB IPU09N03LB PG-TO252-3-11 PG-TO252-3-23 09N03 09n03lb 09n03l PG-TO252-3-11

    Untitled

    Abstract: No abstract text available
    Text: IPD09N03LB G IPF09N03LB G IPS09N03LB G IPU09N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max (SMD version) 9.1 mΩ


    Original     		PDF IPD09N03LB IPF09N03LB IPS09N03LB IPU09N03LB PG-TO252-3-11 PG-TO252-3-23

    smd marking D50

    Abstract: No abstract text available
    Text: IPD09N03lB G IPS09N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 9.1 mΩ ID 50 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPD09N03lB IPS09N03LB PG-TO252-3-11 09N03LB PG-TO251-3-11 smd marking D50

    09N03

    Abstract: 09N03LB IPD09N03LB JESD22 PG-TO252-3-11
    Text: IPD09N03lB G IPS09N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 9.1 mΩ ID 50 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF IPD09N03lB IPS09N03LB PG-TO252-3-11 PG-TO251-3-11 09N03LB 09N03 09N03LB JESD22 PG-TO252-3-11

    09n03lb

    Abstract: PG-TO252-3-23
    Text: OptiMOS 2 Power-Transistor IPD09N03LB G IPS09N03LB G IPU09N03LB G IPF09N03LB G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 9.1 mΩ ID 50 A • N-channel, logic level


    Original     		PDF IPD09N03LB IPU09N03LB IPS09N03LB IPF09N03LB 09n03lb PG-TO252-3-23

    PG-TO252-3-11

    Abstract: 09n03 PG-TO-252-3-11 IPF09N03LB 09N03L PG-TO252 09n03lb
    Text: IPD09N03LB G IPF09N03LB G IPS09N03LB G IPU09N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max (SMD version) 9.1 mΩ


    Original     		PDF IPD09N03LB IPF09N03LB IPS09N03LB IPU09N03LB PG-TO252-3-11 09N03LB 09n03 PG-TO-252-3-11 09N03L PG-TO252 09n03lb

    S 170 MOSFET TRANSISTOR

    Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
    Text: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and


    Original     		PDF B152-H8203-G4-X-7600 S 170 MOSFET TRANSISTOR 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696