Filled PTFE
Abstract: No abstract text available
Text: Model C2023J5003AHF Rev A Ultra Low Profile 0805 3 dB, 90° Hybrid Coupler Description The C2023J503AHF is a low cost, low profile sub-miniature high performance 3 dB coupler in an easy to use surface mount package. It is designed for WiMax,WiBro, UMTS, and IMT2000 applications. The C2023J503AHF is ideal
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C2023J5003AHF
C2023J503AHF
IMT2000
620-C2023J5003AHF
Filled PTFE
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20LOG10
Abstract: No abstract text available
Text: Model C2023J5003AHF Rev B Ultra Low Profile 0805 3 dB, 90° Hybrid Coupler Description The C2023J503AHF is a low cost, low profile sub-miniature high performance 3 dB coupler in an easy to use surface mount package. It is designed for WiMax,WiBro, UMTS, and IMT2000 applications. The C2023J503AHF is ideal
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C2023J5003AHF
C2023J503AHF
IMT2000
20LOG10
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8712 RESISTOR
Abstract: NES1823M-180
Text: DATA SHEET GaAs FET NES1823M-180 180 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-180 is a 180 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It is capable of delivering 180 W of output power CW with high linear gain, high
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NES1823M-180
NES1823M-180
IMT2000
8712 RESISTOR
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C2023 transistor
Abstract: C2023 ptfe tape C2023J5003A00
Text: Model C2023J5003A00 Rev E Ultra Low Profile 0805 3 dB, 90° Hybrid Coupler Description The C2023J503A00 is a low cost, low profile sub-miniature high performance 3 dB coupler in an easy to use surface mount package. It is designed for WiMax,WiBro, UMTS, and IMT2000 applications. The C2023J503A00 is ideal for
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C2023J5003A00
C2023J503A00
IMT2000
C2023 transistor
C2023
ptfe tape
C2023J5003A00
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PDF
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NES1823S-90
Abstract: No abstract text available
Text: DATA SHEET GaAs FET NES1823S-90 90 W L, S-BAND SINGLE-END POWER GaAs FET DESCRIPTION The NES1823S-90 is a 90 W single-end type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It is capable of delivering 90 W of output power CW with high linear gain, high efficiency
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NES1823S-90
NES1823S-90
IMT2000
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PDF
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nec 0882
Abstract: transistor NEC D 882 p nec d 882 p datasheet nec d 882 p NES1823P-45 1658 NEC
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1823P-45 45 W L, S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-45 is a 45 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 45 W of output power CW with high
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NES1823P-45
NES1823P-45
IMT2000
nec 0882
transistor NEC D 882 p
nec d 882 p datasheet
nec d 882 p
1658 NEC
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PDF
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FUJITSU MICROWAVE TRANSISTOR
Abstract: FLL1500IU-2C Fujitsu GaAs FET application note 4433B fujitsu power amplifier GHz balun transformer 50ohm F217 stub tuner matching FLL1500
Text: FUJITSU APPLICATION NOTE - No 008 150-W, 2.11- 2.17 GHz Balanced Compact Amplifier For IMT2000 Base-Station Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average Pout • Easy tuning for Power, WCDMA ACPR, and IMD
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IMT2000
FLL1500IU-2C
440mA
FUJITSU MICROWAVE TRANSISTOR
Fujitsu GaAs FET application note
4433B
fujitsu power amplifier GHz
balun transformer 50ohm
F217
stub tuner matching
FLL1500
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PDF
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C2023J5003A00
Abstract: No abstract text available
Text: Model C2023J5003A00 Rev D Ultra Low Profile 0805 3 dB, 90° Hybrid Coupler Description The C2023J503A00 is a low cost, low profile sub-miniature high performance 3 dB coupler in an easy to use surface mount package. It is designed for WiMax,WiBro, UMTS, and IMT2000 applications. The C2023J503A00 is ideal for
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C2023J5003A00
C2023J503A00
IMT2000
C2023J5003A00
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PDF
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Untitled
Abstract: No abstract text available
Text: Model C2023J5003A00 Rev B Ultra Low Profile 0805 3 dB, 90° Hybrid Coupler Description The C2023J503A00 is a low cost, low profile sub-miniature high performance 3 dB coupler in an easy to use surface mount package. It is designed for WiMax,WiBro, UMTS, and IMT2000 applications. The C2023J503A00 is ideal for
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C2023J5003A00
C2023J503A00
IMT2000
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PDF
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NES1823M-45
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs FET NES1823M-45 45 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-45 is a 45 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000, PCS, and PDC base station systems. It is capable of delivering 45 W of output power CW with high linear
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NES1823M-45
NES1823M-45
IMT2000,
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C2023
Abstract: C2023 transistor
Text: Model C2023J5003AHF Rev A Ultra Low Profile 0805 3 dB, 90° Hybrid Coupler Description The C2023J503AHF is a low cost, low profile sub-miniature high performance 3 dB coupler in an easy to use surface mount package. It is designed for WiMax,WiBro, UMTS, and IMT2000 applications. The C2023J503AHF is ideal
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C2023J5003AHF
C2023J503AHF
IMT2000
C2023
C2023 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: SAW Filters TMX P018 SAW Bandpass Filter – IMT2000 – RF Tx Specification Rev 2 Package Drawing & Pinout .P01
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IMT2000
P05ofile
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PDF
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Untitled
Abstract: No abstract text available
Text: Model C2023J5003AHF Rev D Ultra Low Profile 0805 3 dB, 90° Hybrid Coupler Description The C2023J5003AHF is a low cost, low profile sub-miniature high performance 3 dB coupler in an easy to use surface mount package. It is designed for WiMax,WiBro, UMTS, and IMT2000 applications. The C2023J5003AHF is ideal
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C2023J5003AHF
C2023J5003AHF
IMT2000
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PDF
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DC1722J5020AHF
Abstract: GSM1800 S34C
Text: Model DC1722J5020AHF Rev C Ultra Low Profile 0805 20dB Directional Coupler Description The DC1722J5020AHF is a low cost, low profile sub-miniature high performance 20 dB directional coupler in an easy to use surface mount package. It is designed for 1700 – 1900MHz applications including: WCDMA, CDMA, IMT2000,
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DC1722J5020AHF
DC1722J5020AHF
1900MHz
IMT2000,
GSM1800
S34C
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PDF
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NES1823P-50
Abstract: gaas mes nec 5703 IDA45
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1823P-50 50 W L-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-50 is a 50 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS, and IMT2000 base station systems. It is capable of delivering 50 W of output power CW with high
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NES1823P-50
NES1823P-50
IMT2000
gaas mes
nec 5703
IDA45
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PDF
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Untitled
Abstract: No abstract text available
Text: Multi-carrier Power Amplifier MCPA4000 Power FEATURES 30 Watts • Supports UMTS / IMT2000 3rd generation base stations Frequency Band • High efficiency DC/RF allows for lower operational costs and better thermal performance IMT2000 / UMTS Technology • Advanced wideband high performance
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MCPA4000
IMT2000
RS232,
RS422,
RS485
RS422
DS-MCPA4000,
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NES1823M-240
Abstract: j3780
Text: DATA SHEET GaAs FET NES1823M-240 240 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-240 is a 240 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It operates at 12 V and is capable of delivering 240 W of output power CW with high
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NES1823M-240
NES1823M-240
IMT2000
j3780
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PDF
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NEC 952
Abstract: NES1823P-140
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1823P-140 140 W L, S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-140 is a 140 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 140 W of output power CW with
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NES1823P-140
NES1823P-140
IMT2000
NEC 952
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TDFM1B-2140L-10
Abstract: 7483
Text: CHIP DIELECTRIC FILTERS チップ誘電体フィルタ TDF Series for IMT2000 東光品番 中心周波数 帯域幅 挿入損失 VSWR 選択度 重さ 外形寸法 TOKO Center Freq. Bandwidth Insertion Loss VSWR Selectivity Weight Dimensions mm Part Number
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IMT2000
TDFM1B-1950L-10-01
Fo-230
TDFM1B-2140L-10
Fo-237)
00MHz
TDFM1B-2140L-10
7483
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NEC 743 a
Abstract: transistor NEC D 586 NES1823P-70
Text: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1823P-70 70 W L, S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-70 is a 70 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 70 W of output power CW with high
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NES1823P-70
NES1823P-70
IMT2000
NEC 743 a
transistor NEC D 586
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PDF
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NES1823M-180-A
Abstract: No abstract text available
Text: DATA SHEET GaAs FET NES1823M-180 180 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-180 is a 180 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It operates at 12 V and is capable of delivering 180 W of output power CW with high
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NES1823M-180
NES1823M-180
IMT2000
NES1823M-180-A
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RF Hitec
Abstract: 455KHz notch filter 30 MHz crystal notch filter Ceramic Filters Low Pass 5MHz LC Band Pass Filter band pass filter 10.7mhz RHF-1950R20 RHF-897.2R GSM RHF-935-25A IMT-2000
Text: CAVITY FILTER Cellular/ GSM IMT2000/ WLL FILTER ISO9001 Certified V. 1.8 [FEATURES] Application for Base Stations, Repeaters Low Insertion Loss High Attenuation Custom Design and Development is available GSM Cellular ❍ ❍ ❍ ❍ Model Frequency Range
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IMT2000/
ISO9001
RHF-840R10A
RHF-836R25A
RHF-897
RHDUP-890-25A
RHF-935-25A
20MHz
10MHz)
RF Hitec
455KHz notch filter
30 MHz crystal notch filter
Ceramic Filters Low Pass
5MHz LC Band Pass Filter
band pass filter 10.7mhz
RHF-1950R20
RHF-897.2R GSM
RHF-935-25A
IMT-2000
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AN914
Abstract: APP914 IMT-2000 MAX2383 MAX2383EVKIT Intermediate frequency maxim upconverter
Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: W-CDMA, upconverter, driver, 570MHz IF, WCDMA, intermediate frequency, 570 mhz, UMTS, IMT2000, IMT2000, ARIB, 570mhz if May 01, 2002 APPLICATION NOTE 914 WCDMA Upconverter/Driver Eliminates SAW Filter Supports
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570MHz
IMT2000,
MAX2383
380MHz.
570MHz.
MAX2383
MAX2391
AN914
APP914
IMT-2000
MAX2383EVKIT
Intermediate frequency maxim
upconverter
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PDF
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Untitled
Abstract: No abstract text available
Text: ◆Low Power Consumption ◆Dropout Voltage : 25 A TYP. : 30mV @ 30mA : 100mV @100mA : 0.8V to 5.0 V : More than 150 mA (300mA limit) : 70dB @ 1kHz ◆Output Voltage Range ◆Output Current •APPLICATIONS ●Mobile Phones (PDC, GSM, CDMA, IMT2000 etc.)
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100mV
100mA
300mA
IMT2000
XC6401
XC6401
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