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    Infineon Technologies AG IGC27T120T8LX1SA2

    IGBT 1200V 25A DIE
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    IGC27T120T8L Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IGC27T120T8LX1SA2 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 25A DIE Original PDF

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    fp25r12w2t

    Abstract: FP25R12W2T4
    Text: IGC27T120T8L IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications 1 Recommended for:  low / medium power modules


    Original     		PDF IGC27T120T8L L7643V, L7643P, fp25r12w2t FP25R12W2T4

    Untitled

    Abstract: No abstract text available
    Text: IGC27T120T8L IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications 1 Recommended for:  low / medium power modules


    Original     		PDF IGC27T120T8L L7643V, L7643P,

    Untitled

    Abstract: No abstract text available
    Text: IGC27T120T8L IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology  low switching losses  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications 1 Recommended for:  low / medium power modules


    Original     		PDF IGC27T120T8L L7643V, L7643P,