Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IDT71257 Search Results

    IDT71257 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IDT71257L-25 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    IDT71257L-35 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    IDT71257L-45 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    IDT71257L-55 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    IDT71257L-70 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    IDT71257S-25 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    IDT71257S-35 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    IDT71257S-55 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    IDT71257S-70 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF

    IDT71257 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original
    PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    CY7C197

    Abstract: IDT71257 L7C197CC25 L7C197PC15 L7C197PC20 L7C197PC25
    Text: L7C197 L7C197 DEVICES INCORPORATED 256K x 1 Static RAM 256K x 1 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 256K x 1 Static RAM with Separate I/O, Chip Select Powerdown q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 15 ns maximum


    Original
    PDF L7C197 MIL-STD-883, IDT71257, CY7C197 24-pin 28-pin L7C197 CY7C197 IDT71257 L7C197CC25 L7C197PC15 L7C197PC20 L7C197PC25

    IDT71257

    Abstract: CY7C197 L7C197CC25 L7C197PC15 L7C197PC20 L7C197PC25
    Text: L7C197 L7C197 DEVICES INCORPORATED 256K x 1 Static RAM 256K x 1 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 256K x 1 Static RAM with Separate I/O, Chip Select Powerdown q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 15 ns maximum


    Original
    PDF L7C197 MIL-STD-883, IDT71257, CY7C197 24-pin 28-pin L7C197 IDT71257 CY7C197 L7C197CC25 L7C197PC15 L7C197PC20 L7C197PC25

    Untitled

    Abstract: No abstract text available
    Text: Integrated Device Technology. Inc 4 M EG ABIT 256K x 16 C M O S STATIC RAM M O DULE INFOrm ™ n i d t 7M4016 FEATURES: DESCRIPTION: • High-denslty 4 megabit (256K x 16) CMOS static RAM module • Low power consumption • Utilizes 16 IDT71257 high-performance 256K x 1 CMOS static


    OCR Scan
    PDF 7M4016 IDT71257 48-pin, IDT7M624 1024K DSC-7009/- IDT7M4016

    7C197

    Abstract: No abstract text available
    Text: Data Sheet February 1992 , H &t Microelectronics ATT7C197 High-Speed CMOS SRAM 256 Kbit 256K x 1 , Separate I/O a t Features • High speed — 12 ns maximum access times ■ Plug-compatible with IDT71257 and CY7C197 ■ Automatic powerdown during long cycles


    OCR Scan
    PDF ATT7C197 IDT71257 CY7C197 24-pin, ATT7C197 -137MMOS DS90-120MMOS) 7C197

    idt71257

    Abstract: No abstract text available
    Text: y CMOS STATIC RAM 256K 256K x 1-BIT Integrated Device TechnokDgy. Inc PRELIMINARY IDT 71257S IDT 71257L FEA TU R ES: DESCRIPTION: • H ig h -sp e e d (equal a c c e s s a n d c y c le time) T h e IDT71257 is a 262,144-blt h ig h -s p e e d sta tic R A M org an ize d


    OCR Scan
    PDF 71257S 71257L 25/35/45/55/70ns 20/25/35/45/55ns T71257S T71257L 200mV S4-26 IDT71257S/IDT71257L MIL-STD-883, idt71257

    IDT71257

    Abstract: No abstract text available
    Text: Jdf CMOS STATIC RAM 256K 256K x 1-BIT) Integrated DeviceTechnology Inc PRELIMINARY IDT 71257S IDT 71257L FEATURES: DESCRIPTION: • T h e IDT71257 Is a 262,14 4-b lt h ig h -s p e e d sta tic RAM organized as 256K x 1. It Is fa b ric a te d u sin g ID T 's hig h -p erform a n ce, hlgh-rella b lllty C E M O S te c h n o lo g y . T h is state-of-the-art te chnology,


    OCR Scan
    PDF 71257S 71257L IDT71257S 400nW IDT71257L 100pW 200mV S4-26 IDT71257S/IDT71257L MIL-STD-883. IDT71257

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


    OCR Scan
    PDF KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet January 1992 Ü ^ A T & T Microelectronics ATT7C197 High-Speed CMOS SRAM 256 Kbit 256K x 1 , Separate I/O Features Low-power operation — Active: 210 mW typical at 45 ns — Standby: 500 nW typical • High speed— 12 ns maximum access times


    OCR Scan
    PDF ATT7C197 IDT71257 CY7C197 24-pin, ATT7C197 7C197

    Untitled

    Abstract: No abstract text available
    Text: L7C197 *- — • — - - L7 C 1 0 7 256K x 1 Static RAM JbVUI-S ■ : XJHHO -■A I h □ 256K x 1 Static RAM with Separate 1 /0 , Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum


    OCR Scan
    PDF L7C197 MIL-STD-883, IDT71257, CY7C197 24-pin 28-pin L7C197 L7C197CM25

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan
    PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A

    c4001

    Abstract: No abstract text available
    Text: 1 MEGABIT 1024K x 1-BIT (%AOS STATIC RAM ! In to n a te d Devic e Technology Inc p r e l im in a r y IDT7MC4001 SIP MODULE FEATURES: DESCRIPTION: • H ig h -d en sity 1 m eg ab it (1024K x 1) C M O S static R A M m o d u le T h e ID T7M C4001 Is a 1 m eg a b it (1024K x 1-bit) high-speed


    OCR Scan
    PDF 1024K IDT7MC4001 C4001 IDT71257 30-pin 7MC4001 1024KX

    Untitled

    Abstract: No abstract text available
    Text: REVISIONS LTR DATE YR-MO-DA DESCRIPTION Add vendor CAGE number 75569 to the drawing. Add vendor CAGE number 6Y440 to device types 03LX, 03XX, 04LX, and 04XX. Removed vendor CAGE number OBK02 from drawing as approved source of supply. Editorial changes throughout.


    OCR Scan
    PDF 6Y440 OBK02

    mcm2018a

    Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
    Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information


    OCR Scan
    PDF A16685-7 EMTR1147 mcm2018a sun hold RAS 0610 cqq 765 RT IC HX 710B U256D

    K93C46

    Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257


    OCR Scan
    PDF 416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256

    TC55B8128

    Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6


    OCR Scan
    PDF TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256

    Untitled

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 256K 256K x 1-BIT PRELIMINARY IS !” FEATURES: DESCRIPTION: • The ID T71257 Is a 2 6 2 ,144-bit high-speed static RAM organized as 256K x 1. It is fabricated using ID T’s high-performance, high-rellability C E M O S technology. This state-of-the-art technology,


    OCR Scan
    PDF T71257 144-bit 200mV IDT71257S/IDT71257L 256Kx MIL-STD-883,

    24PIN

    Abstract: CY7B193-12 CY7B193-15 CY7B193-20 CY7B197-12 CY7B197-15 CY7B197-20 EDI81256C-35 24PIN 1800 Hitachi Scans-001
    Text: - 106 2 5 6 K m t, tt £ ïSKiÊSl CC X TAAC max ns) TCAC max (ns) CMOS 4 7 TOE max (ns) TOH (ns) / f TOD max (ns) S t a t i c RAM (2 6 2 14 4 x 1 ) 7' i l t t TWP min (ns) TDS min (ns) TDH min (ns) TWD min (ns) ma ÏÏI3X (ns i V D D or V C C (V) 2 4 P I N


    OCR Scan
    PDF 24PIN CY7B193-12 CY7B193-15 CY7B193-20 CY7B197-5 HM6207HP-35 HM0207HP-45 HM6707JP-20 HM6707 JP-25 CY7B197-12 CY7B197-15 CY7B197-20 EDI81256C-35 24PIN 1800 Hitachi Scans-001

    lt88

    Abstract: EDI81256C45QB
    Text: REVISIONS LTR DATE YR-MO-DA DESCRIPTION Add vendor CAGE number 75569 to the drawing. Add vendor CAGE number 6Y440 to device types 03LX, 03XX, 04LX, and 04XX. Removed vendor CAGE number OBK02 from drawing as approved source of supply. Editorial changes throughout.


    OCR Scan
    PDF 6Y440 OBK02 6Y440 lt88 EDI81256C45QB

    Untitled

    Abstract: No abstract text available
    Text: jjjm ÆmSmmkjjjjjj jmSSm L7C197 •!—mmmm MMMM 256K x 1 Static RAM DEVICES INCORPORATED DESCRIPTION FEATURES □ 256K x 1 Static RAM w ith Separate I/O , Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum


    OCR Scan
    PDF L7C197 MIL-STD-883, IDT71257, CY7C197 24-pin 28-pin 14197PC^

    cm6207

    Abstract: KM61257-35 24PIN IDT71257L-45 IDT71257S-25 IDT71257S-35 IDT71257S-45 IDT71257S-70 IMS1800-25 IMS1800-35
    Text: 107 2 5 6 K fâKÏËffl tt £ rc> X TAAC max ns TCAC max (ns) CMOS 'i TOE max (ns) -y TOH + TOD min sax (ns) (ns) y S t a t i c / TWP (ns) RAM ( 2 6 2 1 4 4 x 1 ) ft tt m. TDS TDH •in min (ns) (ns) (ns) TWD T»R V D D or V C C (ns) I DD max ■ax (V) 2 4 P I N


    OCR Scan
    PDF 262144x1) 24PIN IDT71257L IDT71257L-45 IDT71257L- CM6207-25 MCM6207-35 MCM6207C-15 MCM6207C-20 cm6207 KM61257-35 IDT71257S-25 IDT71257S-35 IDT71257S-45 IDT71257S-70 IMS1800-25 IMS1800-35

    Untitled

    Abstract: No abstract text available
    Text: L7C197 25 6K x 1 Static R A M FEATURES □ 256K x 1 Static RAM with Separate I/O , Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum □ Low Power Operation Active: 165 mW typical at 35 ns Standby: 5 mW typical


    OCR Scan
    PDF L7C197 MIL-STD-883, IDT71257, CY7C197 24-pin 28-pin L7C197 L7C197CM20

    sun hold RAS 0610

    Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
    Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information


    OCR Scan
    PDF A16685-7 EMTR1147 sun hold RAS 0610 oki Logic Motorola transistor 7144 MSC2304 M5M41000