Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IDC08S60C Search Results

    IDC08S60C Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IDC08S60C Infineon Technologies 2nd generation thinQ! SiC Schottky Diode Original PDF
    IDC08S60CEX1SA2 Infineon Technologies Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SIC 600V 8A SAWN WAFER Original PDF
    IDC08S60CEX1SA3 Infineon Technologies Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SIC 600V 8A SAWN WAFER Original PDF
    IDC08S60CEX7SA1 Infineon Technologies Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE GEN PURPOSE SAWN WAFER Original PDF

    IDC08S60C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IEC60721

    Abstract: IFN 152 IEC60721-3-3 Storage of Products Supplied by Infineon Technologies
    Text: IDC08S60CE 2nd generation thinQ!TM SiC Schottky Diode A Features: Applications: •      Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching


    Original
    PDF IDC08S60CE L4714E, IEC60721 IFN 152 IEC60721-3-3 Storage of Products Supplied by Infineon Technologies

    IDC08S60C

    Abstract: IDT08S60C D0135
    Text: IDC08S60C 2nd generation thinQ!TM SiC Schottky Diode FEATURES: Applications: • • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior


    Original
    PDF IDC08S60C IDC08S60C IDT08S60C D0135

    Untitled

    Abstract: No abstract text available
    Text: IDC08S60CE 2nd generation thinQ!TM SiC Schottky Diode Features: Applications: • • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior


    Original
    PDF IDC08S60CE