IRFI840G
Abstract: EK24
Text: IRLI530NPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches TO-220 Full-Pak Part Marking Information E XAMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432 AS S E MB L E D ON WW 24 1999 IN T H E AS S E MB L Y L IN E "K "
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IRLI530NPbF
O-220
I840G
IRFI840G
EK24
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IRFI840G
Abstract: No abstract text available
Text: PD- 95427A IRLI3705NPbF Lead-Free 1 IRLI3705NPbF 2 IRLI3705NPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches TO-220 Full-Pak Part Marking Information E XAMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432
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5427A
IRLI3705NPbF
O-220
I840G
IRFI840G
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Untitled
Abstract: No abstract text available
Text: PD- 95976 IRFI9Z24GPbF Lead-Free 1 IRFI9Z24GPbF 2 IRFI9Z24GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches TO-220 Full-Pak Part Marking Information E XAMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432
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IRFI9Z24GPbF
O-220
I840G
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Untitled
Abstract: No abstract text available
Text: PD- 95648 IRFIBE20GPbF Lead-Free 1 IRFIBE20GPbF 2 IRFIBE20GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters inches TO-220 Full-Pak Part Marking Information E XAMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432
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IRFIBE20GPbF
O-220
I840G
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Untitled
Abstract: No abstract text available
Text: PD- 95975 IRFI9Z14GPbF Lead-Free 1 IRFI9Z14GPbF 2 IRFI9Z14GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches TO-220 Full-Pak Part Marking Information E XAMP L E : T H IS IS AN IR F I840G WIT H AS S E MB L Y L OT CODE 3432
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IRFI9Z14GPbF
O-220
I840G
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IRFz44n equivalent
Abstract: IRFIZ44N IRFZ44N IRFIZ44N equivalent irf 630
Text: PD - 9.1403A IRFIZ44N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier
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IRFIZ44N
O-220
IRFz44n equivalent
IRFIZ44N
IRFZ44N
IRFIZ44N equivalent
irf 630
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Untitled
Abstract: No abstract text available
Text: PD- 95655 IRLIZ14GPbF Lead-Free Document Number: 91315 7/26/04 www.vishay.com 1 IRLIZ14GPbF Document Number: 91315 www.vishay.com 2 IRLIZ14GPbF Document Number: 91315 www.vishay.com 3 IRLIZ14GPbF Document Number: 91315 www.vishay.com 4 IRLIZ14GPbF Document Number: 91315
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IRLIZ14GPbF
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: PD- 95654 IRLI640GPbF Lead-Free Document Number: 91314 7/26/04 www.vishay.com 1 IRLI640GPbF Document Number: 91314 www.vishay.com 2 IRLI640GPbF Document Number: 91314 www.vishay.com 3 IRLI640GPbF Document Number: 91314 www.vishay.com 4 IRLI640GPbF Document Number: 91314
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IRLI640GPbF
08-Mar-07
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MOSFET IRFB 630
Abstract: IRFB 630 93804B MOSFET IRFB 630 Datasheet transistor IRF 630 AN1001 IRF1010 IRFB41N15D IRFIB41N15D IRFS41N15D
Text: PD - 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Applications l HEXFET Power MOSFET High frequency DC-DC converters VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See
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93804B
IRFB41N15D
IRFIB41N15D
IRFS41N15D
IRFSL41N15D
AN1001)
O-220AB
O-220
O-262
IRFB41N15D
MOSFET IRFB 630
IRFB 630
93804B
MOSFET IRFB 630 Datasheet
transistor IRF 630
AN1001
IRF1010
IRFIB41N15D
IRFS41N15D
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IRF 042
Abstract: irf 540 mosfet IRL3803 IRLI3803
Text: PD - 9.1320B IRLI3803 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D
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1320B
IRLI3803
O-220
IRF 042
irf 540 mosfet
IRL3803
IRLI3803
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IRLIB4343PbF
Abstract: No abstract text available
Text: PD - 95755 DIGITAL AUDIO MOSFET IRLIB4343PbF Features l l l l l l l l Advanced Process Technology Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDSON for Improved Efficiency Low Qg and Qsw for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI
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IRLIB4343PbF
O-220
IRLIB4343PbF
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IRF1310N
Abstract: IRF1310n equivalent 4.5V to 100V input regulator
Text: PD - 94873 IRFI1310NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 0.036Ω G Description Fifth Generation HEXFETs from International Rectifier
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IRFI1310NPbF
O-220
I840G
IRF1310N
IRF1310n equivalent
4.5V to 100V input regulator
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Untitled
Abstract: No abstract text available
Text: PD- 95652 IRLI2910PbF Lead-Free www.irf.com 1 7/26/04 IRLI2910PbF 2 www.irf.com IRLI2910PbF www.irf.com 3 IRLI2910PbF 4 www.irf.com IRLI2910PbF www.irf.com 5 IRLI2910PbF 6 www.irf.com IRLI2910PbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations
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IRLI2910PbF
I840G
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IRL530N
Abstract: No abstract text available
Text: PD - 95635 IRLI530NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 100V
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IRLI530NPbF
O-220
I840G
IRL530N
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1530A
Abstract: f1010e IRF 10A 55V irf 9246 I840G IRF9Z34N IRFI9Z34N IRF MOSFET 10A P irf power mosfet Equivalent IRF 44
Text: PD - 9.1530A IRFI9Z34N HEXFET Power MOSFET Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l D VDSS = -55V RDS on = 0.10Ω G ID = -14A
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IRFI9Z34N
O-220
1530A
f1010e
IRF 10A 55V
irf 9246
I840G
IRF9Z34N
IRFI9Z34N
IRF MOSFET 10A P
irf power mosfet
Equivalent IRF 44
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IRF3205 equivalent
Abstract: irf3205 mosfet transistor irf3205 DRIVER IRF3205 TO-220 EK 110 IRF3205 IRF3205 E DATASHEET IRF3205 IR Equivalent IRF 44 DSA0030791
Text: PD - 9.1374B IRFI3205 HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.008Ω
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1374B
IRFI3205
O-220
IRF3205 equivalent
irf3205 mosfet transistor
irf3205 DRIVER
IRF3205 TO-220
EK 110
IRF3205
IRF3205 E DATASHEET
IRF3205 IR
Equivalent IRF 44
DSA0030791
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Untitled
Abstract: No abstract text available
Text: PD- 95655 IRLIZ14GPbF Lead-Free Document Number: 91315 7/26/04 www.vishay.com 1 IRLIZ14GPbF Document Number: 91315 www.vishay.com 2 IRLIZ14GPbF Document Number: 91315 www.vishay.com 3 IRLIZ14GPbF Document Number: 91315 www.vishay.com 4 IRLIZ14GPbF Document Number: 91315
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IRLIZ14GPbF
12-Mar-07
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IRL520N
Abstract: IRLI520N mosfet 60v 60a
Text: PD - 9.1496 IRLI520N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 100V
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IRLI520N
O-220
IRL520N
IRLI520N
mosfet 60v 60a
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f1010e
Abstract: IRFI1010N equivalent IRF1010N IRFI1010N IRF 260 N irf 460 IRF 409
Text: PD - 9.1373A IRFI1010N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.012Ω G ID = 49A S Description Fifth Generation HEXFETs from International Rectifier
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IRFI1010N
O-220
f1010e
IRFI1010N equivalent
IRF1010N
IRFI1010N
IRF 260 N
irf 460
IRF 409
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IRF1010N
Abstract: international rectifier code
Text: PD - 95418 IRFI1010NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 0.012Ω G ID = 49A S Description
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IRFI1010NPbF
O-220
additional220
I840G
IRF1010N
international rectifier code
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IRL520N
Abstract: IRLI520N irf 540 mosfet IRF 260 N diode a37
Text: Previous Datasheet Index Next Data Sheet PD - 9.1496 IRLI520N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated
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IRLI520N
IRL520N
IRLI520N
irf 540 mosfet
IRF 260 N
diode a37
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IRFI1310N
Abstract: IRF1310N 4.5V TO 100V INPUT REGULATOR
Text: Previous Datasheet Index Next Data Sheet PD 9.1373 IRFI1310N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D
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IRFI1310N
IRFI1310N
IRF1310N
4.5V TO 100V INPUT REGULATOR
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Equivalent IRF 44
Abstract: ultra low igss pA IRL2505 IRLI2505
Text: PD - 9.1327A IRLI2505 HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D
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IRLI2505
O-220
Equivalent IRF 44
ultra low igss pA
IRL2505
IRLI2505
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irf 930
Abstract: IRF4905 equivalent SEC IRF 640 R 133 A IRF4905 IRFI4905 equivalent of irf4905 IRF 260 N
Text: PD - 9.1526A IRFI4905 HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS on = 0.02Ω G ID = -41A
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IRFI4905
O-220
irf 930
IRF4905 equivalent
SEC IRF 640
R 133 A
IRF4905
IRFI4905
equivalent of irf4905
IRF 260 N
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