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    GB30RF60K

    Abstract: ntc 901
    Text: Bulletin I27303 01/07 GB30RF60K IGBT PIM MODULE VCES = 600V Features • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10 s Short Circuit Capability Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics


    Original     		PDF I27303 GB30RF60K 12-Mar-07 GB30RF60K ntc 901

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    Abstract: No abstract text available
    Text: Bulletin I27303 01/07 GB30RF60K IGBT PIM MODULE VCES = 600V Features • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10 s Short Circuit Capability Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics


    Original     		PDF I27303 GB30RF60K