HY531B1D0AHAS Search Results

battary backup circuit

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Text: H Y 5316 1 DDA •HYUNDAI 54K N 1 B-blt CMOS FAST SRAM ADVANCED INFORMATION DESCRIPTION HY531B100A Is a high-spBsd 55,536* 15-bils CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS proDBss technology. This high reliability process coupled with high-spæd circuit dBsign lechniqUBS, yÌBlds maximum accBss lima Df 15ns. The HY531B1D0Ahas a data retsntion mede that guarantees data to