HWC34NC Search Results

HWC34NC Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
HWC34NC		Hexawave	12 W C-band power FET non-via hole chip		Original	PDF

HWC34NC Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: HWC34NC 123456789ABC7DEF7 952 47 9B71 7 Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • 8.5 dB Typical Gain at 4 GHz • 5V to 10V Operation 1525.0 9 1392.5 1235.0 1 5 1077.5 10 Description 920.0	Original	PDF	HWC34NC 123456789ABC7DEF7 HWC34NC TST231
IN 5406 Abstract: F24G 1S121 M 16100 39 2 1019 Text: Jft, HSXAWAVS Hexawave, Inc. C-Band Non-Via Hole Chip Description The following parts are presently offered in chip form. They are fabricated by Hexawave 0.7^m gate length, nchannel MESFET process, non -via hole device, designed for various C-Band applications.	OCR Scan	PDF	HWC27NC HWC30NC HWC34NC chip67 IN 5406 F24G 1S121 M 16100 39 2 1019

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: HWC34NC 123456789ABC7DEF7 952 47 9B71 7 Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • 8.5 dB Typical Gain at 4 GHz • 5V to 10V Operation 1525.0 9 1392.5 1235.0 1 5 1077.5 10 Description 920.0

Original

PDF

HWC34NC 123456789ABC7DEF7 HWC34NC TST231

IN 5406

Abstract: F24G 1S121 M 16100 39 2 1019
Text: Jft, HSXAWAVS Hexawave, Inc. C-Band Non-Via Hole Chip Description The following parts are presently offered in chip form. They are fabricated by Hexawave 0.7^m gate length, nchannel MESFET process, non -via hole device, designed for various C-Band applications.

OCR Scan

PDF

HWC27NC HWC30NC HWC34NC chip67 IN 5406 F24G 1S121 M 16100 39 2 1019