HVM20
Abstract: No abstract text available
Text: RECTRON HVM20 SEMICONDUCTOR TECHNICAL SPECIFICATION HIGH VOLTAGE ASSEMBLIED RECTIFIER VOLTAGE 20000 Volts CURRENT 0.35 Amperes HVM FEATURES * * * * * * Low cost Low leakage Isolated case Surge overload rating - 50 amperes peak Mounting position: Any Low forward voltage drop
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HVM20
300us
HVM20
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Untitled
Abstract: No abstract text available
Text: RECTRON HVM20 SEMICONDUCTOR TECHNICAL SPECIFICATION HIGH VOLTAGE ASSEMBLIED RECTIFIER VOLTAGE 20000 Volts CURRENT 0.35 Amperes HVM FEATURES * * * * * * Low cost Low leakage Isolated case Surge overload rating - 50 amperes peak Mounting position: Any Low forward voltage drop
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HVM20
300us
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HVM20L
Abstract: HVM15L hvm8
Text: HVM5L RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION HVM20L HIGH VOLTAGE ASSEMBLIED RECTIFIER VOLTAGE RANGE 5000 to 20000 Volts CURRENT 0.35 Amperes FEATURES * * * * * * Low cost Low leakage Isolated case Surge overload rating - 50 amperes peak Mounting position: Any
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HVM20L
300us
------5000V
------8000V
0----10000V
2----12000V
4-------14000V
5-------15000V
6-------16000V
0----20000V
HVM20L
HVM15L
hvm8
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Untitled
Abstract: No abstract text available
Text: < HIGH VOLTAGE DIODE MODULES > RM250DG-130F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules RM250DG-130F IF•··································································· 250A
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RM250DG-130F
HVM-2025-A
RM250DG-13ration
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Untitled
Abstract: No abstract text available
Text: < HIGH VOLTAGE DIODE MODULES > RM800DG-90F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules RM800DG-90F IF•··································································· 800A
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RM800DG-90F
HVM-2026-B
RM800DG-90F
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Untitled
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION S.Iura A K.Kurachi R I.Umezaki E H.Yamaguchi I.Umezaki V 27-Sep.-2006 4-Feb.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM1200DG-66S
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27-Sep
RM1200DG-66S
HVM-2010-A
400A/Â
31-Jan
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Untitled
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi A K.Kurachiv R E I.Umezaki I.Umezaki V 11-May-2007 4-Feb.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM300DG-90S 2. Structure
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11-May-2007
RM300DG-90S
HVM-2011-A
100A/Â
31-Jan
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HVDi MODULES Prepared by H.Uemura Revision: 1.0 Approved by H.Yamaguchi 21-Sep.-2010 RM400DG-90F HIGH POWER SWITCHING USE INSULATED TYPE HVDi High Voltage Diode Modules RM400DG-90F N/A IF ……………………… 400 A VRRM ……………………
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21-Sep
RM400DG-90F
HVM-2024
150nH
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Untitled
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E I.Umezaki V 1-Aug.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM1200HE-66S 2. Structure Flat base type Insulated package, AlSiC base plate
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RM1200HE-66S
HVM-2003-A
300A/Â
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Untitled
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E I.Umezaki V 4-Feb.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM400DG-66S 2. Structure Flat base type Insulated package, AlSiC base plate
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RM400DG-66S
HVM-2012
800A/Â
31-Jan
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Untitled
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E H.Yamaguchi V 10-Apr.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM900DB-90S 2. Structure Flat base type Insulated package, Cu base plate
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10-Apr
RM900DB-90S
HVM-2018
600A/Â
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Untitled
Abstract: No abstract text available
Text: < HIGH VOLTAGE DIODE MODULES > RM250DG-130F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules RM250DG-130F IF•··································································· 250A
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RM250DG-130F
HVM-2025-A
RM250DG-13int
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Untitled
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION I.Umezaki A K.Kurachi R Y.konishi E I.Umezaki M.Yamamoto V Nov.-18-2008 Oct.6.2003 HIGH VOLTAGE DIODE MODULE SPECIFICATION 1. Type Number
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RM600HE-90S
HVM-2006-A
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RM600DG-130S
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E I.Umezaki V 4-Feb.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM600DG-130S 2. Structure Flat base type Insulated package, AlSiC base plate
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RM600DG-130S
HVM-2016
31-Jan
RM600DG-130S
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Untitled
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION I.Umezaki A K.Kurachi R Y.konishi E I.Umezaki M.Yamamoto V Nov.-18-2008 Oct.6.2003 HIGH VOLTAGE DIODE MODULE SPECIFICATION 1. Type Number
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RM600HE-90S
HVM-2006-A
600A/Â
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Untitled
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E I.Umezaki V 4-Feb.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM600DG-130S 2. Structure Flat base type Insulated package, AlSiC base plate
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RM600DG-130S
HVM-2016
000A/Â
31-Jan
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Untitled
Abstract: No abstract text available
Text: < HIGH VOLTAGE DIODE MODULES > RM1500DC-66F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules RM1500DC-66F IF•··································································· 2 x 1500A
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RM1500DC-66F
HVM-2023-B
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ALCATEL 2840
Abstract: WK 6052 CUJ-XXX-16B Centillium Communications TNETE100A
Text: nt magnetics nuvotem Magnetic Components for Communications and Data Line Technology Sales & Marketing, Design and Manufacturing Facilities http://www.talema-nuvotem.com Eastern Europe & Czech Republic NT MAGNETICS s.r.o. Chebská 27 322 00 Plzeñ Tel: Int. + 420 377 - 338 351
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Untitled
Abstract: No abstract text available
Text: SECURITY CODE Spec. NAME Customer’s Std. Spec. Prepared by Checked by Approved by DATE MITSUBISHI ELECTRIC CORPORATION K.Kurachi R E I.Umezaki V 1-Aug.-2008 HIGH VOLTAGE DIODE MODULE 1. Type Number RM1200HE-66S 2. Structure Flat base type Insulated package, AlSiC base plate
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RM1200HE-66S
HVM-2003-A
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LS 2027
Abstract: No abstract text available
Text: < HIGH VOLTAGE DIODE MODULES > RM1200DG-90F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules RM1200DG-90F IF•································································ 1200A
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RM1200DG-90F
RM1200DG-90F
HVM-2027-B
LS 2027
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Untitled
Abstract: No abstract text available
Text: < HIGH VOLTAGE DIODE MODULES > RM800DG-90F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules RM800DG-90F IF•··································································· 800A
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RM800DG-90F
HVM-2026-B
RM800DG-90F
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Untitled
Abstract: No abstract text available
Text: < HIGH VOLTAGE DIODE MODULES > RM1500DC-66F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules RM1500DC-66F IF•··································································· 2 x 1500A
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RM1500DC-66F
HVM-2023-B
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Untitled
Abstract: No abstract text available
Text: < HIGH VOLTAGE DIODE MODULES > RM400DG-90F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules RM400DG-90F IF•··································································· 400A
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RM400DG-90F
HVM-2024-C
RM400DG-90F
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Untitled
Abstract: No abstract text available
Text: < HIGH VOLTAGE DIODE MODULES > RM1000DC-66F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules RM1000DC-66F IF •································································· 2 x 1000A
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RM1000DC-66F
HVM-2022-B
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