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    HVL142A Price and Stock

    Renesas Electronics Corporation HVL142AM3KRF-E

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    Avnet Americas HVL142AM3KRF-E Bulk 4 Weeks 2,791
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    Rochester Electronics HVL142AM3KRF-E 830,000 1
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    Renesas Electronics Corporation HVL142AKRF-E

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    Avnet Americas HVL142AKRF-E Bulk 4 Weeks 2,791
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    Verical HVL142AKRF-E 3,500 478
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    Rochester Electronics HVL142AKRF-E 40,000 1
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    Chip1Stop HVL142AKRF-E Cut Tape 3,500
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    HVL142A Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HVL142A Renesas Technology Silicon Epitaxial Planar Pin Diode Original PDF
    HVL142A Renesas Technology Diode; Antenna switching; VR (V): 30; IF (mA): 100; Pd (mW): 100; rf (ohm) max: 1.3; Condition IF at rf (mA): 10; Condition f at rf (MHz): 100; VF (V) max: 1; Condition IF at VF (mA): 10; C (pF) max: 0.35; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: EFP Original PDF
    HVL142A-E Renesas Technology DIODE PIN SWITCH 30V 2EFP Original PDF
    HVL142AKRF Renesas Technology Pin Diode, Silicon Epitaxial Planar Pin Diode for Antenna Switching Original PDF
    HVL142AKRF-E Renesas Technology DIODE PIN SWITCH 30V 2EFP Original PDF
    HVL142AM Renesas Technology Silicon Epitaxial Planar Pin Diode Original PDF
    HVL142AM-E Renesas Technology DIODE PIN SWITCH 30V 2TEFP Original PDF

    HVL142A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HVL142AM

    Abstract: PUSF0002ZA-A NO133
    Text: HVL142AM Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0198-0200 Rev.2.00 Jan 19, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max)


    Original     		PDF HVL142AM REJ03G0198-0200 PUSF0002ZA-A HVL142AM PUSF0002ZA-A NO133

    HVL142A

    Abstract: HVL142AM
    Text: HVL142AM Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0198-0100Z Rev.1.00 Mar.25.2004 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max)


    Original     		PDF HVL142AM REJ03G0198-0100Z HVL142A HVL142AM

    Untitled

    Abstract: No abstract text available
    Text: HVL142A Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0432-0100 Previous: ADE-208-1593 Rev.1.00 Nov 26, 2004 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. (C = 0.35 pF max) Low forward resistance. (rf = 1.3 Ω max)


    Original     		PDF HVL142A REJ03G0432-0100 ADE-208-1593) HVL142A 12echnology Unit2607

    Untitled

    Abstract: No abstract text available
    Text: HVL142A Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0432-0200 Rev.2.00 Jan 13, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max)


    Original     		PDF HVL142A REJ03G0432-0200 PXSF0002ZA-A

    HVL142A

    Abstract: No abstract text available
    Text: HVL142A Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0432-0200 Rev.2.00 Jan 13, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max)


    Original     		PDF HVL142A REJ03G0432-0200 PXSF0002ZA-A HVL142A

    HVL142A

    Abstract: No abstract text available
    Text: HVL142A Silicon Epitaxial Planar Pin Diode for Antenna Switching ADE-208-1593 Z Rev.0 Nov. 2002 Features • Low capacitance. (C = 0.35 pF max) • Low forward resistance. (rf = 1.3 Ω max) • Extremely small Flat Package (EFP) is suitable for surface mount design.


    Original     		PDF HVL142A ADE-208-1593 D-85622 D-85619 HVL142A

    Untitled

    Abstract: No abstract text available
    Text: HVL142A Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0432-0200 Rev.2.00 Jan 13, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max)


    Original     		PDF HVL142A REJ03G0432-0200 HVL142A PXSF0002ZA-A

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    DIODE marking S4 59A

    Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
    Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3


    Original     		PDF REJ16G0002-2200 DIODE marking S4 59A DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323

    Untitled

    Abstract: No abstract text available
    Text: RKP406KS Composite Pin Diode for Antenna Switching REJ03G1461-0100 Rev.1.00 Jul 10, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max @IF = 2 mA, f = 100 MHz)


    Original     		PDF RKP406KS REJ03G1461-0100 MFP12) MFP12 PUSF0012ZA-A HVL142AM RKP201KN

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    HVL142AM

    Abstract: PUSF0012ZA-A RKP201KN RKP406KS mark L6
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    EIAJ-ED-4701

    Abstract: EIAJED-4701 1SS106 EIAJ-ED-4131 RKP450KE EIAJ standards zener diode reliability fit 1s2076 smd diode ED 1SS270
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF REJ27G0006-0400/Rev EIAJ-ED-4701 EIAJED-4701 1SS106 EIAJ-ED-4131 RKP450KE EIAJ standards zener diode reliability fit 1s2076 smd diode ED 1SS270

    Untitled

    Abstract: No abstract text available
    Text: RKP405KS Composite Pin Diode for Antenna Switching REJ03G1543-0100 Rev.1.00 Apr 20, 2007 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max @IF = 10 mA, f = 100 MHz)


    Original     		PDF RKP405KS REJ03G1543-0100 MFP12) RKP405KS MFP12 PUSF0012ZA-A HVL142AM

    varicap diode

    Abstract: HSD226-N HSL226-N RKV653KP HVL142-N bromine hydroxide
    Text: Renesas Technology Expands its Lineup of Halogen-Free Resin Diode Products  Three new package types, TEFP, EFP, and SFP, will be joined in addition to Current 0.6 x 0.3 mm size varicap diodes  Tokyo, December 7, 2006  Renesas Technology Corp. today announced the expansion of its lineup


    Original     		PDF HVL142AM-N HVL142-N HSL226-N HRD0103C-N HSD226-N varicap diode HSD226-N HSL226-N RKV653KP HVL142-N bromine hydroxide

    Untitled

    Abstract: No abstract text available
    Text: RKP405KS Composite Pin Diode for Antenna Switching REJ03G1543-0100 Rev.1.00 Apr 20, 2007 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max @IF = 10 mA, f = 100 MHz)


    Original     		PDF RKP405KS REJ03G1543-0100 MFP12) MFP12 PUSF0012ZA-A HVL142AM REJ03G1543-0100

    Untitled

    Abstract: No abstract text available
    Text: RKP407KS Composite Pin Diode for Antenna Switching REJ03G1462-0100 Rev.1.00 Jul 10, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max @IF = 2 mA, f = 100 MHz)


    Original     		PDF RKP407KS REJ03G1462-0100 MFP12) MFP12 PUSF0012ZA-A HVL142AM RKP201KN

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563

    HVL142A

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586

    r61505

    Abstract: R63400 R61506 R61504 R61501 NS953 Niigata Seimitsu ns953 ic data r61503 Niigata Seimitsu 04BZ
    Text: Rev.19.00 2007.10.31 Renesas Diodes General Presentation www.renesas.com Renesas Diodes General Presentation October 2007 Standard Product Business Group 10/31/2007 Rev.19.00 2007. Renesas Technology Corp., All rights reserved. Notes regarding these materials


    Original     		PDF REJ13G0001-1900 r61505 R63400 R61506 R61504 R61501 NS953 Niigata Seimitsu ns953 ic data r61503 Niigata Seimitsu 04BZ

    HVL142AM

    Abstract: PUSF0012ZA-A RKP415KS
    Text: RKP415KS Composite Pin Diode for Antenna Switching REJ03G1737-0100 Rev.1.00 Nov 27, 2008 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max) Thin outline of diode array with four same kind of elements (MFP12) is suitable for compact and high-density


    Original     		PDF RKP415KS REJ03G1737-0100 MFP12) MFP12 PUSF0012ZA-A HVL142AM REJ03G1737-0100 PUSF0012ZA-A RKP415KS

    PUSF0012ZA-A

    Abstract: RKP201KN RKP400KS HVL142AM 6L-112
    Text: RKP400KS Composite Pin Diode for Antenna Switching REJ03G1257-0200 Rev.2.00 Jul 03, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max @IF = 2 mA, f = 100 MHz)


    Original     		PDF RKP400KS REJ03G1257-0200 MFP12) MFP12 PUSF0012ZA-A HVL142AM RKP201KN PUSF0012ZA-A RKP400KS 6L-112

    HVL142AM

    Abstract: PUSF0012ZA-A RKP201KN RKP406KS mark L6
    Text: RKP406KS Composite Pin Diode for Antenna Switching REJ03G1461-0100 Rev.1.00 Jul 10, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max @IF = 2 mA, f = 100 MHz)


    Original     		PDF RKP406KS REJ03G1461-0100 MFP12) MFP12 PUSF0012ZA-A HVL142AM RKP201KN PUSF0012ZA-A RKP406KS mark L6