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    HN2A01 Price and Stock

    Toshiba America Electronic Components HN2A01FU-Y(TE85L,F

    TRANS 2PNP DUAL 50V 150MA US6
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    DigiKey HN2A01FU-Y(TE85L,F Digi-Reel 2,203 1
    • 1 $0.38
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    • 100 $0.38
    • 1000 $0.09795
    • 10000 $0.09795
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    HN2A01FU-Y(TE85L,F Cut Tape 2,203 1
    • 1 $0.37
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    • 1000 $0.09501
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    Mouser Electronics HN2A01FU-Y(TE85L,F 656
    • 1 $0.32
    • 10 $0.208
    • 100 $0.096
    • 1000 $0.086
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    Toshiba America Electronic Components HN2A01FE-GR(TE85LF

    TRANS 2PNP DUAL 50V 150MA ES6
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    Toshiba America Electronic Components HN2A01FU-GR

    150 MA, 50 V, 2 CHANNEL, PNP, SI, SMALL SIGNAL TRANSISTOR
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    Quest Components HN2A01FU-GR 2,882
    • 1 $0.156
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    • 1000 $0.0702
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    Others HN2A01FU-Y (TE85R)

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    Chip 1 Exchange HN2A01FU-Y (TE85R) 5,700
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    HN2A01 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HN2A01FE Toshiba Original PDF
    HN2A01FE-GR(TE85LF Toshiba Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRAN DUAL PNP -50V -0.15A ES6 Original PDF
    HN2A01FE-Y(TE85L,F Toshiba Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRAN DUAL PNP -50V -0.15A ES6 Original PDF
    HN2A01FU Toshiba Silicon PNP Epitaxial Type (PCT Process) Transistor Original PDF
    HN2A01FU Toshiba Japanese - Transistors Original PDF
    HN2A01FU Toshiba PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) Scan PDF
    HN2A01FU-GRTE85L Toshiba HN2A01FU - Trans GP BJT PNP 50V 0.15A 6-Pin US T/R Original PDF
    HN2A01FU-GR(TE85LF) Toshiba Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRANSISTOR PNP US6-PLN Original PDF
    HN2A01FU-GR(TE85LF Toshiba HN2A01FU - TRANS GP BJT PNP 50V 0.15A Original PDF
    HN2A01FU-Y(TE85L,F Toshiba Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRAN DUAL PNP -50V -0.15A US6 Original PDF

    HN2A01 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HN2A01FU

    Abstract: No abstract text available
    Text: HN2A01FU シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ HN2A01FU ○ 低周波増幅用 ○ AM 増幅用 z z z z z 単位: mm ウルトラスーパーミニ (6 端子) パッケージに 2 素子を内蔵しています。 高耐圧です。


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    HN2A01FU 150mA 100mA, HN2A01FU PDF

    HN2A01FU

    Abstract: No abstract text available
    Text: HN2A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN2A01FU Audio Frequency General Purpose Amplifier Applications Unit: mm Small package (dual type) High voltage and high current : VCEO = −50V, IC = −150mA (max) High hFE : hFE = 120~400


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    HN2A01FU -150mA HN2A01FU PDF

    Untitled

    Abstract: No abstract text available
    Text: HN2A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN2A01FE Audio Frequency General Purpose Amplifier Applications Unit: mm z Small package (dual type) z High voltage and high current : VCEO = −50V, IC = −150mA (max) z High hFE : hFE = 120 to 400


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    HN2A01FE 150mA 55mitation, PDF

    HN2A01FU

    Abstract: No abstract text available
    Text: HN2A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN2A01FU Audio Frequency General Purpose Amplifier Applications Unit: mm l Small package (dual type) l High voltage and high current : VCEO = −50V, IC = −150mA (max) l High hFE : hFE = 120~400


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    HN2A01FU -150mA HN2A01FU PDF

    HN2A01FU

    Abstract: No abstract text available
    Text: HN2A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN2A01FU Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm Small package (dual type) High voltage and high current : VCEO = −50V, IC = −150mA (max) : hFE = 120~400


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    HN2A01FU -150mA HN2A01FU PDF

    HN2A01FE

    Abstract: No abstract text available
    Text: HN2A01FE 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 HN2A01FE ○ 低周波増幅用 ○ AM 増幅用 単位: mm z エクストリームスーパーミニ (6 端子) パッケージに 2 素子を内蔵してい ます。 z 高耐圧です。


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    HN2A01FE -150mA -100mA, -10mA HN2A01FE PDF

    HN2A01FE

    Abstract: No abstract text available
    Text: HN2A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN2A01FE Audio Frequency General Purpose Amplifier Applications Unit: mm z Small package (dual type) z High voltage and high current : VCEO = −50V, IC = −150mA (max) z High hFE : hFE = 120~400


    Original
    HN2A01FE -150mA HN2A01FE PDF

    HN2A01FE

    Abstract: No abstract text available
    Text: HN2A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN2A01FE Audio Frequency General Purpose Amplifier Applications Unit: mm Small package (dual type) High voltage and high current : VCEO = −50V, IC = −150mA (max) High hFE : hFE = 120~400


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    HN2A01FE -150mA HN2A01FE PDF

    Untitled

    Abstract: No abstract text available
    Text: HN2A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN2A01FU Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm Small package (dual type) High voltage and high current : VCEO = −50V, IC = −150mA (max) : hFE = 120 to 400


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    HN2A01FU 150mA PDF

    Untitled

    Abstract: No abstract text available
    Text: HN2A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN2A01FE Audio Frequency General Purpose Amplifier Applications Unit: mm z Small package (dual type) z High voltage and high current : VCEO = −50V, IC = −150mA (max) z High hFE : hFE = 120~400


    Original
    HN2A01FE -150mA PDF

    HN2A01FU

    Abstract: No abstract text available
    Text: HN2A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN2A01FU Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm Small package (dual type) High voltage and high current : VCEO = −50V, IC = −150mA (max) : hFE = 120~400


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    HN2A01FU -150mA HN2A01FU PDF

    Untitled

    Abstract: No abstract text available
    Text: HN2A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN2A01FE Audio Frequency General Purpose Amplifier Applications Unit: mm Small package (dual type) High voltage and high current : VCEO = −50V, IC = −150mA (max) High hFE : hFE = 120~400


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    HN2A01FE 150mA PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


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    BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 PDF

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


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    200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


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    SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 PDF

    LM8550

    Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
    Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo


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    2N2222/A KTN2222/A 2SA1150 KTA1272 2SA1510 2SB546A 2N2369/A KTN2369/A 2SA1151 KTA1266 LM8550 KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960 PDF

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製 品の誤作動や故障により、生命・身体・財産が侵害されることのないように、購入


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    050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40 PDF

    HN2A01FU

    Abstract: No abstract text available
    Text: TOSHIBA HN2A01 FU TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS H N 2 A 01 FU Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. 2 .1 ± 0.1 • Small Package (Dual Type) • High Voltage and High Current : VCEO = —50V, Iq = —150mA (Max.)


    OCR Scan
    HN2A01FU N2A01FU 150mA 961001EAA2' HN2A01FU PDF

    transistor marking 9M

    Abstract: No abstract text available
    Text: TOSHIBA HN2A01FU TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS H N • ■ m 'm AÎ 7 m m w 11 ■ F ■ 11 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. 2.1 • Small Package (Dual Type) • High Voltage and High Current


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    HN2A01FU ----50V, --150mA 961001EAA2' transistor marking 9M PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE HN2A01FU U nit in mm AUD IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • Small Package Dual Type • High Voltage and High Current : V q e o ——50V, I q = —150mA(Max.) • High h p g : hj>E = 120-400 • Excellent hjrj; Linearity


    OCR Scan
    HN2A01FU ----50V, --150mA --100mA, --10mA --10V, PDF

    Untitled

    Abstract: No abstract text available
    Text: HN2A01 FU T O SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS H N2A01FU Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • Small Package (Dual Type) • High Voltage and High Current : VCE0 = _ 50V, IC = - 150mA (Max.)


    OCR Scan
    HN2A01 N2A01FU 150mA 961001EAA2' PDF

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 2SA1245 167 *2SC1923 2SC2996 266 * 2N3905 2SA1255 170 *2SC1959 2SC3011 272


    OCR Scan
    2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737 PDF