Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HN1C03FU Search Results

    SF Impression Pixel

    HN1C03FU Price and Stock

    Toshiba America Electronic Components HN1C03FU-B,LF

    NPN + NPN IND. TRANSISTOR VCEO20
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HN1C03FU-B,LF Reel 12,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.05785
    		Buy Now
    HN1C03FU-B,LF Cut Tape 5,543 1
    • 1 $0.32
    • 10 $0.198
    • 100 $0.1238
    • 1000 $0.08126
    • 10000 $0.08126
    		Buy Now
    HN1C03FU-B,LF Digi-Reel 1
    • 1 $0.32
    • 10 $0.198
    • 100 $0.1238
    • 1000 $0.08126
    • 10000 $0.08126
    		Buy Now
    Mouser Electronics HN1C03FU-B,LF 3,193
    • 1 $0.32
    • 10 $0.198
    • 100 $0.092
    • 1000 $0.077
    • 10000 $0.051
    		Buy Now

    Toshiba America Electronic Components HN1C03FU-A(TE85L,F

    TRANS 2NPN 20V 0.3A US6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HN1C03FU-A(TE85L,F Cut Tape 1
    • 1 $0.56
    • 10 $0.343
    • 100 $0.2187
    • 1000 $0.14756
    • 10000 $0.14756
    		Buy Now
    HN1C03FU-A(TE85L,F Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.10857
    		Buy Now
    HN1C03FU-A(TE85L,F Digi-Reel 1
    • 1 $0.56
    • 10 $0.343
    • 100 $0.2187
    • 1000 $0.14756
    • 10000 $0.14756
    		Buy Now
    Mouser Electronics HN1C03FU-A(TE85L,F
    • 1 $0.46
    • 10 $0.283
    • 100 $0.156
    • 1000 $0.12
    • 10000 $0.078
    		Get Quote

    Toshiba America Electronic Components HN1C03FU-B(TE85L,F

    Bipolar Transistors - BJT Dual Trans NPN x 2 20V, 0.3A, US6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics HN1C03FU-B(TE85L,F 1,727
    • 1 $0.42
    • 10 $0.322
    • 100 $0.194
    • 1000 $0.126
    • 10000 $0.097
    		Buy Now
    EBV Elektronik HN1C03FU-B(TE85L,F 13 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Toshiba America Electronic Components HN1C03FU-B,LF(T

    Trans GP BJT NPN 20V 0.3A 200mW 6-Pin US T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical HN1C03FU-B,LF(T 2,439 187
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.1563
    • 10000 $0.155
    		Buy Now
    Newark HN1C03FU-B,LF(T Cut Tape 2,960 5
    • 1 $0.3
    • 10 $0.23
    • 100 $0.109
    • 1000 $0.06
    • 10000 $0.06
    		Buy Now
    Chip1Stop HN1C03FU-B,LF(T Cut Tape 2,439
    • 1 -
    • 10 $0.148
    • 100 $0.134
    • 1000 $0.125
    • 10000 $0.124
    		Buy Now

    HN1C03FU Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HN1C03FU Toshiba NPN Multi-Chip Composite Transistor Pair Original PDF
    HN1C03FU Unknown Silicon NPN Transistor Scan PDF
    HN1C03FUA Toshiba TRANS GP BJT NPN 20V 0.3A 6(2-2J1A) Original PDF
    HN1C03FUATE85L Toshiba HN1C03F - TRANSISTOR 300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    HN1C03FU-A(TE85L,F Toshiba Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRAN DUAL NPN 20V 0.3A US6 Original PDF
    HN1C03FUATE85N Toshiba HN1C03F - TRANSISTOR 300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    HN1C03FUATE85R Toshiba HN1C03F - TRANSISTOR 300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    HN1C03FU-B,LF Toshiba America Electronic Components NPN + NPN IND. TRANSISTOR VCEO20 Original PDF
    HN1C03FUBTE85L Toshiba HN1C03F - TRANSISTOR 300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    HN1C03FU-B(TE85L,F Toshiba HN1C03FU - Trans GP BJT NPN 20V 0.3A 6-Pin US T/R Original PDF
    HN1C03FUBTE85N Toshiba HN1C03F - TRANSISTOR 300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    HN1C03FUBTE85R Toshiba HN1C03F - TRANSISTOR 300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    HN1C03FUTE85L Toshiba HN1C03F - TRANSISTOR 300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    HN1C03FUTE85N Toshiba HN1C03F - TRANSISTOR 300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    HN1C03FUTE85R Toshiba HN1C03F - TRANSISTOR 300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF

    HN1C03FU Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HN1C03FU

    Abstract: No abstract text available
    Text: HN1C03FU シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ HN1C03FU ○ ミューティング用 ○ スイッチング用 z z z z 単位: mm ウルトラスーパーミニ (6 端子) パッケージに 2 素子を内蔵しています。


    Original     		PDF HN1C03FU HN1C03FU

    HN1C03FU

    Abstract: No abstract text available
    Text: HN1C03FU TOSHIBA Transistor Silicon Npn Epitaxial Type PCT Process HN1C03FU Unit: mm For Muting and Switching Applications Including two devices in US6 (ultra super mini type with 6 leads) High emitter-base voltage: VEBO = 25V (min) High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)


    Original     		PDF HN1C03FU HN1C03FU

    HN1C03FU

    Abstract: No abstract text available
    Text: HN1C03FU TOSHIBA Transistor Silicon Npn Epitaxial Type PCT Process HN1C03FU Unit: mm For Muting and Switching Applications z Including two devices in US6 (ultra super mini type with 6 leads) z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)


    Original     		PDF HN1C03FU HN1C03FU

    HN1C03FU

    Abstract: No abstract text available
    Text: HN1C03FU シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ HN1C03FU ○ ミューティング用 ○ スイッチング用 z z z z 単位: mm ウルトラスーパーミニ (6 端子) パッケージに 2 素子を内蔵しています。


    Original     		PDF HN1C03FU HN1C03FU

    HN1C03FU

    Abstract: No abstract text available
    Text: HN1C03FU TOSHIBA Transistor Silicon Npn Epitaxial Type PCT Process HN1C03FU Unit: mm For Muting and Switching Applications z Including two devices in US6 (ultra super mini type with 6 leads) z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)


    Original     		PDF HN1C03FU HN1C03FU

    Untitled

    Abstract: No abstract text available
    Text: HN1C03FU TOSHIBA Transistor Silicon Npn Epitaxial Type PCT Process HN1C03FU Unit: mm For Muting and Switching Applications z Including two devices in US6 (ultra super mini type with 6 leads) z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)


    Original     		PDF HN1C03FU

    HN1C03FU

    Abstract: No abstract text available
    Text: HN1C03FU TOSHIBA Transistor Silicon Npn Epitaxial Type PCT Process HN1C03FU Unit: mm For Muting and Switching Applications l Including two devices in US6 (ultra super mini type with 6 leads) l High emitter-base voltage: VEBO = 25V (min) l High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)


    Original     		PDF HN1C03FU HN1C03FU

    Untitled

    Abstract: No abstract text available
    Text: HN1C03FU TOSHIBA Transistor Silicon Npn Epitaxial Type PCT Process HN1C03FU Unit: mm For Muting and Switching Applications z Including two devices in US6 (ultra super mini type with 6 leads) z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)


    Original     		PDF HN1C03FU

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


    Original     		PDF TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558

    HN4C06J

    Abstract: te85l F 1SS302 2SC4117 SUFFIX TE85L Toshiba 2SK2145 HN1B04FE rn4983 US6 KEC RN1306
    Text: Small-Signal Multi-Chip Discrete Devices Transistors and Diodes PRODUCT GUIDE Contents What Is a Multi-Chip Discrete Device? • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 2


    Original     		PDF

    TC94A70FG

    Abstract: TC90507XBG TMPA8873 tb1307fg TC90512XBG TB1318FG tb2926hq Toshiba TMPA8873 TB2926 TC90507
    Text: システムカタログ 2008-9 システムカタログ 東芝半導体 ○○○○○○編 アプリケーションガイ ド s e m i c o n d u c t o r h t tp://w w w.se micon.tosh iba.co.jp/ さまざまなアプリケーションごとに東芝の半導体製品をご紹介します。


    Original     		PDF TB7004FL TB6814LG TC7705FNG SCJ0015C SCJ0015B TC94A70FG TC90507XBG TMPA8873 tb1307fg TC90512XBG TB1318FG tb2926hq Toshiba TMPA8873 TB2926 TC90507

    TC7SZ08FU

    Abstract: lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU SOT-24 te85l F TC7W04F 2sc2240 equivalent
    Text: General-Purpose Small-Signal Surface-Mount Devices PRODUCT GUIDE CONTENTS 1. Package Information 3 to 6 2. Small Signal Transistors and Diodes 2.1 New Products 2.2 Small-Signal Transistors 2.3 Bias Resistor Transistora BRTs 6.1 Single Output type 6.2 Dual Output type


    Original     		PDF 3407C-0209 TC7SZ08FU lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU SOT-24 te85l F TC7W04F 2sc2240 equivalent

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A HN1C03FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HN1C03FU Unit in mm FOR MUTING AN D SWITCHING APPLICATIONS. • Including Two Devices in US6 (Ultra Super Mini Type with 6 leads) High Emitter-Base Voltage : V e BO = 25V (Min.)


    OCR Scan     		PDF HN1C03FU

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN1C03FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS uH u uN 1m r f l v3 F 1 1 • Unit in mm FOR MUTING AND SWITCHING APPLICATIONS. • Including Two Devices in US6 (Ultra Super Mini Type with. 6 leads) » High Emitter-Base Voltage V m T » / i = 9. * V Í M i n Ì


    OCR Scan     		PDF HN1C03FU

    280AM

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE HN1C03FU U nit in mm FOR M U T IN G A N D SW ITCH IN G APPLICATIONS. • Including Two Devices in US6 Ultra Super Mini Type with • High Emitter-Base Voltage : V g jjo = 25V (Min. • High Reverse hyg : • □ in - Q <£> 1 Ö


    OCR Scan     		PDF HN1C03FU 280AM

    marking IAY

    Abstract: HN1C03FU
    Text: TOSHIBA HN1C03FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HN1C03FU Unit in mm FOR MUTING AND SWITCHING APPLICATIONS. . ± 0.1 2 1 • • • Low on R e s is ta n c e : R q n 990 Including Two Devices in US6 (Ultra Super Mini Type with 6 leads)


    OCR Scan     		PDF HN1C03FU marking IAY HN1C03FU

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737