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    Toshiba America Electronic Components HN1C01FU-GR,LXHF

    AUTO AEC-Q NPN + NPN TR VCEO:50V
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    Toshiba America Electronic Components HN1C01FE-Y,LXHF

    AUTO AEC-Q NPN + NPN TR VCEO:50V
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    Toshiba America Electronic Components HN1C01FE-GR,LXHF

    AUTO AEC-Q NPN + NPN TR VCEO:50V
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    Mouser Electronics HN1C01FE-GR,LXHF 7,990
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    Toshiba America Electronic Components HN1C01FU-Y,LXHF

    AUTO AEC-Q NPN + NPN TR VCEO:50V
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    DigiKey HN1C01FU-Y,LXHF Reel 3,000 3,000
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    HN1C01FU-Y,LXHF Cut Tape 2,870 1
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    Mouser Electronics HN1C01FU-Y,LXHF 5,812
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    Toshiba America Electronic Components HN1C01FE-GR,LF

    TRANS 2NPN 50V 0.15A ES6
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    DigiKey HN1C01FE-GR,LF Cut Tape 2,848 1
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    HN1C01 Datasheets (53)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HN1C01F Toshiba NPN Multi-Chip Composite Transistor Pair Original PDF
    HN1C01F Toshiba Japanese - Transistors Original PDF
    HN1C01F Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    HN1C01FE Toshiba Transistor Silicon NPN Epitaxial Type (PCT Process) Original PDF
    HN1C01FEGR Toshiba TRANS GP BJT NPN 50V 50A 6(2-2N1G) Original PDF
    HN1C01FE-GR,LF Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - TRANS 2NPN 50V 0.15A ES6 Original PDF
    HN1C01FE-GR(5L,F,T Toshiba Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRAN DUAL NPN 50V 0.15A ES6 Original PDF
    HN1C01FE-GR,LXHF Toshiba America Electronic Components AUTO AEC-Q NPN + NPN TR VCEO:50V Original PDF
    HN1C01FE-Y,LF Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - TRANS 2NPN 50V 0.15A ES6 Original PDF
    HN1C01FE-Y,LXHF Toshiba America Electronic Components AUTO AEC-Q NPN + NPN TR VCEO:50V Original PDF
    HN1C01FE-Y(T5L,F,T Toshiba Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRAN DUAL NPN 50V 0.15A ES6 Original PDF
    HN1C01FGRTE85L Toshiba HN1C01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    HN1C01F-GR(TE85L,F Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - TRANS 2NPN 50V 0.15A SM6 Original PDF
    HN1C01F-GRTE85LF Toshiba HN1C01F - Trans GP BJT NPN 50V 0.15A 6-Pin SM T/R Original PDF
    HN1C01F-GR(TE85L,F) Toshiba Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRANS NPN 50V 150MA SM6 Original PDF
    HN1C01FGRTE85N Toshiba HN1C01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    HN1C01FGRTE85R Toshiba HN1C01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    HN1C01F(T5L:T) Toshiba TRANS GP BJT NPN 50V 0.15A 6(2-3N1A) T/R Original PDF
    HN1C01F(TE85L) Toshiba TRANS GP BJT NPN 50V 0.15A 6(2-3N1A) Original PDF
    HN1C01FTE85L Toshiba HN1C01 - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN, BIP General Purpose Small Signal Original PDF

    HN1C01 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HN1C01F

    Abstract: No abstract text available
    Text: HN1C01F シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ HN1C01F ○ 低周波増幅用 ○ 低周波低雑音用 ○ AM 増幅用 z z z z z 単位: mm スーパーミニ (6 端子) パッケージに 2 素子を内蔵しています。


    Original     		PDF HN1C01F 150mA 100mA, HN1C01F

    Untitled

    Abstract: No abstract text available
    Text: HN1C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01FE Unit: mm Audio Frequency General Purpose Amplifier Applications z Small package (Dual type) z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120 to 400


    Original     		PDF HN1C01FE 150mA

    HN1C01F

    Abstract: No abstract text available
    Text: HN1C01F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01F Unit: mm Audio Frequency General Purpose Amplifier Applications l Small package (Dual type) l High voltage and high current : VCEO = 50V, IC = 150mA (max) l High hFE : hFE = 120~400


    Original     		PDF HN1C01F 150mA HN1C01F

    HN1C01F

    Abstract: No abstract text available
    Text: HN1C01F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01F Unit: mm Audio-Frequency General-Purpose Amplifier Applications z Small package (dual type) z High voltage and high current : VCEO = 50 V, IC = 150 mA (max) z High hFE : hFE = 120~400


    Original     		PDF HN1C01F HN1C01F

    Untitled

    Abstract: No abstract text available
    Text: HN1C01FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01FU Unit: mm Audio Frequency General Purpose Amplifier Applications z Small package (Dual type) z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120 to 400


    Original     		PDF HN1C01FU 150mA

    Untitled

    Abstract: No abstract text available
    Text: HN1C01F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01F Unit: mm Audio-Frequency General-Purpose Amplifier Applications z Small package (dual type) z High voltage and high current : VCEO = 50 V, IC = 150 mA (max) z High hFE : hFE = 120 to 400


    Original     		PDF HN1C01F

    HN1C01F

    Abstract: No abstract text available
    Text: HN1C01F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01F Unit: mm Audio-Frequency General-Purpose Amplifier Applications Small package (dual type) High voltage and high current : VCEO = 50 V, IC = 150 mA (max) High hFE : hFE = 120~400 Excellent hFE linearity


    Original     		PDF HN1C01F HN1C01F

    Untitled

    Abstract: No abstract text available
    Text: HN1C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01FE Unit: mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity


    Original     		PDF HN1C01FE 150mA

    HN1C01FU

    Abstract: No abstract text available
    Text: HN1C01FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01FU Unit: mm Audio Frequency General Purpose Amplifier Applications z Small package (Dual type) z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400


    Original     		PDF HN1C01FU 150mA HN1C01FU

    HN1C01FU

    Abstract: No abstract text available
    Text: HN1C01FU シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ HN1C01FU ○ 低周波増幅用 z z z z z 単位: mm ウルトラスーパーミニ (6 端子) パッケージに 2 素子を内蔵しています。 高耐圧です。 : VCEO = 50V


    Original     		PDF HN1C01FU 150mA 100mA, HN1C01FU

    HN1C01FE

    Abstract: No abstract text available
    Text: HN1C01FE 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 HN1C01FE ○ 低周波増幅用 単位: mm z エクストリームスーパーミニ (6 端子) パッケージに 2 素子を内蔵してい ます。 z 高耐圧です。


    Original     		PDF HN1C01FE 150mA HN1C01FE

    HN1C01FE

    Abstract: No abstract text available
    Text: HN1C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01FE Unit: mm Audio Frequency General Purpose Amplifier Applications z Small package (Dual type) z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400


    Original     		PDF HN1C01FE 150mA HN1C01FE

    HN1C01FU

    Abstract: No abstract text available
    Text: HN1C01FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01FU Unit: mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity


    Original     		PDF HN1C01FU 150mA HN1C01FU

    HN1C01F

    Abstract: No abstract text available
    Text: HN1C01F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01F Unit: mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity


    Original     		PDF HN1C01F 150mA HN1C01F

    HN1C01FE

    Abstract: No abstract text available
    Text: HN1C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01FE Unit: mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity


    Original     		PDF HN1C01FE 150mA HN1C01FE

    HN1C01F

    Abstract: No abstract text available
    Text: HN1C01F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01F Unit: mm Audio-Frequency General-Purpose Amplifier Applications z Small package (dual type) z High voltage and high current : VCEO = 50 V, IC = 150 mA (max) z High hFE : hFE = 120~400


    Original     		PDF HN1C01F HN1C01F

    HN1C01FE

    Abstract: No abstract text available
    Text: HN1C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01FE Unit: mm Audio Frequency General Purpose Amplifier Applications z Small package (Dual type) z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400


    Original     		PDF HN1C01FE 150mA HN1C01FE

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE HN1C01FU U nit in mm AUD IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • Small Package Dual Type • High Voltage and High Current : Vc e O ~ 50V, 10 = 150mA (MAX.) • High hpE : hpE = 120~400 • Excellent hpE Linearity


    OCR Scan     		PDF HN1C01FU 150mA

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN1C01 FU T O S H IB A T R A N SISTO R SILICO N NPN E P ITA X IA L TYPE PCT PROCESS HN1C01FU Unit in mm A U D IO FR E Q U E N C Y G ENERAL PURPOSE A M P L IFIE R A P P L IC A T IO N S . 2 . 1± 0.1 1.25 ±0.1 1— D6 11 IT L_L 2 S 9 '0 M A X IM U M


    OCR Scan     		PDF HN1C01 HN1C01FU 150mA

    UX1000

    Abstract: No abstract text available
    Text: TOSHIBA HN1C01FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS H N 1 r fl 1 F 11 u u u m Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. 2 . 1± 0.1 1.2 5 ±0.1 • Small Package (Dual Type) n 6 • High Voltage and High Current


    OCR Scan     		PDF HN1C01FU 150mA 961001EAA2' UX1000

    marking N1C

    Abstract: TRANSISTOR MARKING TE US6 "MARKING TE" US6 D9ED N1C TRANSISTOR HN1C01FU ed general semiconductor
    Text: TOSHIBA HN1C01FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS H N 1 C 0 1 FU Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. 2 .1± 0.1 1.25 ± 0.1. • Small Package (Dual Type) • High Voltage and High Current : V c e O = 50V, Ie = 150mA (MAX.)


    OCR Scan     		PDF HN1C01FU 150mA 961001EAA2' marking N1C TRANSISTOR MARKING TE US6 "MARKING TE" US6 D9ED N1C TRANSISTOR HN1C01FU ed general semiconductor

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN1C01F TOSHIBA TRANSISTOR h SILICON NPN EPITAXIAL TYPE PCT PROCESS N1 r n1 F Unit in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • • • Small Package (Dual Type) High Voltage and High Current : V(}EO = 50V, Ic = 150mA (Max.)


    OCR Scan     		PDF HN1C01F 150mA 61001EA

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A HN1C01F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HN1C01F Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • • • Small Package (Dual Type) High Voltage and High Current : VCEO = 50V, Ic = 150mA (Max.)


    OCR Scan     		PDF HN1C01F 150mA

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE HN1C01F U nit in mm AUD IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • • • Small Package Dual Type High Voltage and High Current : V q ]jo = 50V, I q = 150mA (Max.) High hjrE : hpg = 120—400 Excellent hpE Linearity


    OCR Scan     		PDF HN1C01F 150mA 100mA,