DATA SHEET OF IC 317
Abstract: Test-Element-Group Thermal Test-Element-Group hitachi ic hitachi HM514256 HM514256 28-pin SOJ SRAM high speed thyristor HM62256 Reliability of Hitachi IC Memories
Text: Reliability of Hitachi IC Memories Contents 1. Structure 2. Reliability 3. Reliability of Semiconductor Devices Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern,
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77106
Abstract: CRACK DETECTION PATTERNS HM628128 reliability test data cbv 2 10910 statistical Physics Hitachi DSA00503
Text: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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Untitled
Abstract: No abstract text available
Text: H B 5 6 A 1 4 0 S e r ie s 1,048,576-Word x 40-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56A140B/SB is a 1M x 40 dynamic RAM module, mounted 10 pieces of 4 Mbit DRAM HM514400AS sealed in SOJ package. An outline of the HB56A140B/SB is a 72-pin single In-line package. Therefore, the HB56A140B/
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576-Word
40-Bit
HB56A140B/SB
HM514400AS)
72-pin
HB56A140B/
ns/70
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Untitled
Abstract: No abstract text available
Text: HITACHI/ LOGIC/ARRAYS/MEM 51E D MM 1 b 5Q 3 OOlflS?«? fl73 • H I T S HM514400A Series HM514400AL Series Low P ow er Version HM514400ASL Series Super Low Pow er Version Preliminary 1,048,576-Word x 4-Bit Dynamic Random Access Memory HM514400AJ/AU/ALSJ Series
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HM514400A
HM514400AL
HM514400ASL
576-Word
HM514400AJ/AU/ALSJ
20-pin
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514400A
Abstract: M514400A 514400AZ
Text: HM514400A S e rie s -HM514400AL Series Low Power Version HM514400ASL Series Super Low Power Version Preliminary 1,048,576-Word x 4-Bit Dynamic Random Access Memory HM514400AJ/A LJ/A LSJ Series • DESCRIPTION The Hitachi HM514400A is a C M O S dynamic RAM organized 1,048,576 word x
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HM514400A
----------------HM514400AL
HM514400ASL
576-Word
20-pin
514400A
M514400A
514400AZ
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Untitled
Abstract: No abstract text available
Text: HB56G19 Series 1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56G19 is a 1M x 9 dynamic RAM module, mount ed two 4 Mbit DRAM HM514400AS sealed in SOJ package and 1 Mbit DRAM (HM511000AJP) sealed in SOJ package.
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HB56G19
576-Word
HM514400AS)
HM511000AJP)
30-pin
HB56G19A)
HB56G19B/
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Untitled
Abstract: No abstract text available
Text: HB56A240 Series 2,097,152-Word x 40-Bit High Density Dynamic RAM Module • PINOUT ■ DESCRIPTION The HB56A240B/SB is a 2M x 40 dynamic RAM module, mounted 20 pieces of 4 Mbit DRAM HM514400AS sealed in SOJ package. An outline of the HB56A240B/SB is a 72-pin single in-line package. Therefore, the HB56A240B/
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HB56A240
152-Word
40-Bit
HB56A240B/SB
HM514400AS)
72-pin
HB56A240B/
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Untitled
Abstract: No abstract text available
Text: HB56A140 Series 1,048,576-Word x 40-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56A140B/SB is a 1M x 40 dynamic RAM module, mounted 10 pieces of 4 Mbit DRAM HM514400AS sealed in SOJ package. An outline of the HB56A140B/SB is a 72-pin single in-line package. Therefore, the HB56A140B/
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HB56A140
576-Word
40-Bit
HB56A140B/SB
HM514400AS)
72-pin
HB56A140B/
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Untitled
Abstract: No abstract text available
Text: H B 5 6 G 1 8 S e r ie s 1,048,576-Word x 8-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56G18 is a 1M x 8 dynamic RAM module, mount ed two 4 Mbit DRAM HM514400AS sealed in SOJ pack age. An outline of the HB56G18 is 30-pin single in-line pack
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576-Word
HB56G18
HM514400AS)
30-pin
HB56G18
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HB56D236BS7A
Abstract: No abstract text available
Text: blE ]> • 44cJtiED3 DDE3til3 103 ■ H I T E HB56D236 Series - hitachi/ logic/arrays/meh 2,097,152-Word x 36-Bit High Density Dynamic RAM Module The H B56D 236 is a 2M x 36 dynam ic RAM module, m ounted 16 pieces of 4-M bit DRAM HM514400AS/ALS sealed in SOI package and 8
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44cJtiED3
HB56D236
152-Word
36-Bit
HM514400AS/ALS)
HM511000AT/ALT)
72-pin
236BS/SBS
HB56D236BS7A
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Untitled
Abstract: No abstract text available
Text: HM514400A S e rie s -HM514400AL Series Low Power Version HM514400ASL Series Super Low Power Version Preliminary 1,048,576-Word x 4-Bit Dynamic Random A c ce s s Memory HM 514400AJ/AU/ALSJ Series • DESCRIPTION The Hitachi HM514400A is a C M O S dynamic RAM organized 1,048,576 word x
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HM514400A
--------------------------HM514400AL
HM514400ASL
576-Word
514400AJ/AU/ALSJ
20-pin
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hb56g19b
Abstract: No abstract text available
Text: HB56G19 S e rie s -1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The H B56G19 is a 1M x 9 dynamic R A M module, mount ed two 4 Mbit D R A M HM514400AS sealed in S O J package and 1 Mbit DRAM (HM511000AJP) sealed in S O J package.
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HB56G19
576-Word
B56G19
HM514400AS)
HM511000AJP)
30-pin
HB56G19A)
HB56G19B/
hb56g19b
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56G1
Abstract: HB56G18B-8A HM514400
Text: HB56G18 Series 1,048,576-Word x B-Bit High Density Dynamic RAM Module • DESCRIPTION The H856G18 is a 1M x 8 dynamic RAM module, mount ed two 4 Mbit DRAM HM514400AS sealed in SOJ pack age. An outline of the HB56G18 is 30-pin single in-line pack age (socket type).
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HB56G18
HB56G18B-7A
HB56G18B-8A
HB56G18B-10A
30-pin
HB56G18GB-7A
HB56G18GB-8A
HB56G18GB-
576-Word
56G1
HM514400
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0934H
Abstract: No abstract text available
Text: HB56A240 Series-\ 2,097,152-Word x 40-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PINOUT The HB56A240B/SB is a 2M x 40 dynamic RAM module, mounted 20 pieces of 4 Mbit DRAM HM514400AS sealed in SOJ package. An outline of the HB56A240B/SB is a
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HB56A240
152-Word
40-Bit
HB56A240B/SB
HM514400AS)
72-pin
HB56A240B/
0934H
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flash 32 Pin PLCC 16mbit
Abstract: 398x
Text: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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HM514400
Abstract: No abstract text available
Text: blE ]> • 4 4 T b 20 3 □ D 2 3 b D 3 Eb4 ■ H I T S HB56D136 Series -HITACHI/ LOGIC/ARRAYS/MEM 1,048,576-Word x 36-Bit High Density Dynamic RAM Module T h e H B 5 6 D 1 3 6 is a 1M x 3 6 d y n a m ic R A M m o d u le , m o u n te d 8 p ie c e s o f 4 -M b it D R A M
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44Tb203
GG23bG3
HB56D136
576-Word
36-Bit
HM514400AS/ALS
HM511000AJP/
72-pin
HM514400
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CBV2
Abstract: 27x10
Text: Reliability o f Hitachi IC Memories 1. Structure IC m em ory devices are classified as N M O S type, C M O S type, and B i-C M O S type. T here are advantages to it's circuit design, layout pattern, degree o f integration, and m anufacturing process. A ll H itachi m em ories are produced using standardized design, m anufacturing, and inspection techniques.
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CBV2
Abstract: hitachi ic thyristor TT 570 N Reliability of Hitachi IC Memories
Text: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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62256 hitachi
Abstract: 28 pin plastic dip hitachi dimension hitachi PLC
Text: Reliability of Hitachi 1C Memories 1. Structure The dies of IC memories are encapsulated in various packages. The most common packages are plastic and cerdip. Plastic packages are widely used in many different types of equipment. Cerdip packaging is especially suitable in equipment
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HY514400-80
Abstract: hitachi 1k x 4 HM514402 HM514402A-7 20PIN HM514400JP-10 hitachi r 150 HM514410AL-7 Hitachi Scans-001
Text: - 233 4M CMOS w % tt £ CC TRAC max ns) A D y n a m i c &• > y n R A M (1 0 4 8 5 7 6 x 4 ) tt 2 0 P I N m 7, TRCY min (ns) TCAD min (ns) TAI-i min (ns) TP mi n (ns) TCCY min (ns) TDH min (ns) TRWC min (ns) V D D or V C C I DD (V) (mA) Â I DD STANDBY
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20PIN
HM514400AJ/S/Z/17R-Ã
HM514400AJ/S/Z/T/R-7
HM514400AJ/S/Z/T/H-8
IK/16
KM44C1000A-10
KM44C1000AL-7
IK/128
KM44C1000AL-8
HY514400-80
hitachi 1k x 4
HM514402
HM514402A-7
HM514400JP-10
hitachi r 150
HM514410AL-7
Hitachi Scans-001
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CBV2
Abstract: HN27C301
Text: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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Untitled
Abstract: No abstract text available
Text: blE D • 44^503 GD22774 SOfl fH IT S HM514400A/AL/ASL Series— 1,048,576-word X 4-bit Dynamic RAM H ITACHI/ The Hitachi HM 514400A/AL/ASL is a CMOS dynamic RAM organized 1,048,576-word x 4-bit. HM514400A/AL/ASL has realized higher density, higher perform ance and various functions by
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GD22774
HM514400A/AL/ASL
576-word
20-pin
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Untitled
Abstract: No abstract text available
Text: ^flB 56G 18 Series-1,048,576-Word x 8-Bit High Density Dynamic RAM Module • DESCRIPTION The H B56G 18 is a 1M x 8 dynam ic RAM m odule, m ount ed tw o 4 M bit DRAM H M 514400AS sealed in SOJ p ack age. An outline o f the H B56G 18 is 30-pin single in-line p ack
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576-Word
514400AS)
30-pin
HBS6G18
HB56G18
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514400
Abstract: hb56g19b
Text: HB56G19 Series 1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN O U T T h e H B 5 6 G 1 9 is a 1M x 9 dynam ic R A M m odule, m ount ed tw o 4 M bit D R A M H M 5 1 4 4 0 0 A S se a le d in S O J p a c ka g e and 1 M b it D R A M (H M 5 1 1 0 0 0 A JP ) s ealed in S O J package.
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HB56G19
576-Word
HM514400AS)
HM511000AJP)
30-pin
HB56G19A)
HB56G19B/
514400
hb56g19b
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